Infineon Technologies CY7C1618KV18-333BZXC

Overview

CY7C1618KV18-333BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit DDR II synchronous SRAM with 8M × 18 organization, 333 MHz clock frequency, double-data-rate interface delivering 666 MT/s effective throughput, and 1.8-V core supply with HSTL I/O. It serves as high-bandwidth buffer memory in network packet processors requiring precise timing alignment between multiple DDR SRAMs via echo clocks and dual output clocks.

For engineers reviewing the CY7C1618KV18-333BZXC datasheet, CY7C1618KV18-333BZXC pinout, CY7C1618KV18-333BZXC application, or CY7C1618KV18-333BZXC equivalent, key selection criteria include two-word burst architecture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, JTAG 1149.1 test access, and 165-ball FBGA package compatibility with high-speed board layout constraints.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal self-timed writes and a 1-bit burst counter driven by A0. Read data is registered on rising edges of C/C (or K/K in single-clock mode), while write data is latched on both K and K rising edges - enabling true DDR operation without external phase alignment circuitry.

The device integrates a PLL for accurate data placement, echo clocks (CQ/CQ) synchronized to C/C for simplified controller-side data capture, and ZQ impedance calibration for HSTL output matching. It supports variable-drive HSTL outputs (1.4 V–VDD) and operates with either 1.5-V or 1.8-V I/O supply, maintaining signal integrity across mixed-voltage systems.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C331624PFS-333BIN and IS61WV102418BLL-333TQLI, CY7C1618KV18-333BZXC uniquely delivers DDR II timing precision with integrated echo clocks and impedance calibration - essential for deterministic latency in packet-processing and radar systems where external timing compensation is impractical.

Availability

CY7C1618KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C1618KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full Cypress memory portfolio, including high-performance synchronous SRAMs.

CY7C1618KV18 belongs to the DDR II SRAM product line, designed specifically for applications demanding deterministic latency, high bandwidth, and simplified high-speed data capture - such as networking infrastructure, wireless baseband, and real-time signal processing.

FAQ

What is the function of the DOFF pin on CY7C1618KV18-333BZXC?

The DOFF (Data Output OFFset) pin configures read latency: when tied high, it enables DDR II mode with 1.5-cycle latency for improved timing margin; when tied low, it reverts to DDR I mode with 1-cycle latency for backward compatibility. This is a static configuration pin sampled at power-up and does not require dynamic control during operation.

Can CY7C1618KV18-333BZXC operate with only K and K clocks, without C and C?

Yes - the device supports single-clock mode where C and C are omitted and read data is clocked out using K and K instead. In this mode, echo clocks CQ/CQ remain active and synchronized to K/K, preserving their utility for data capture alignment, though system-level deskew capability is reduced compared to dual-clock operation.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external 240 Ω resistor to ground; the internal calibration circuit measures this reference and adjusts DQ and CQ driver strength to achieve 60 Ω output impedance (0.2 × 240 Ω). Direct connection to VDDQ enables minimum-impedance mode (~30 Ω); grounding or leaving ZQ floating is prohibited and may cause undefined behavior.

Is JTAG boundary scan supported during normal SRAM operation?

Yes - IEEE 1149.1 boundary scan operates independently of memory functionality. The TAP controller remains accessible even while the SRAM is actively reading/writing, allowing concurrent test access and functional operation - critical for in-system diagnostics in carrier-grade equipment without service interruption.