Infineon Technologies CY7C1620KV18-250BZXC

Overview

CY7C1620KV18-250BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit DDR II synchronous SRAM configured as 4M × 36, operating at 250 MHz with 500 MT/s effective data rate via double-data-rate interface. It features two-word burst architecture, echo clocks (CQ/CQ), and programmable output impedance via ZQ pin. Designed for high-bandwidth buffering in network packet processors and telecom line cards.

For engineers reviewing the CY7C1620KV18-250BZXC datasheet, CY7C1620KV18-250BZXC pinout, CY7C1620KV18-250BZXC application, or CY7C1620KV18-250BZXC equivalent, key selection criteria include 250 MHz clock frequency, 4M × 36 organization, 1.8-V core/1.5–1.8-V I/O support, FBGA-165 package, and DOFF-configurable read latency (1-cycle vs. 1.5-cycle).

Technical Context

This DDR II SRAM implements synchronous pipelined operation with dual input clocks (K/K) for address/data capture and dual output clocks (C/C) for data launch, enabling precise timing control and reduced skew across high-speed memory buses. Its internal burst counter uses A0 to generate sequential 36-bit word pairs on each access.

The device supports both single-clock mode (using K/K only) and dual-clock mode (with dedicated C/C), and includes JTAG 1149.1 test access port and PLL-based data placement accuracy. Echo clocks CQ/CQ are phase-aligned to C/C and simplify system-level data capture without external delay compensation.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C3256A-25JCIN and IS61WV102418BLL-25BLI, CY7C1620KV18-250BZXC delivers 5× higher effective bandwidth, eliminates board-level clock deskew effort via CQ/CQ, and supports configurable latency for real-time signal chain optimization-making it uniquely suited for next-generation packet and sample buffering.

Availability

CY7C1620KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial video processing requiring stable component supply, long-lifecycle support, and guaranteed Pb-free manufacturing compliance.

Supply support for CY7C1620KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including DDR II SRAMs, with global manufacturing, quality assurance, and long-term product support.

CY7C1620KV18 belongs to Infineon's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in networking, telecommunications, and real-time signal processing systems where DDR I/O and echo clock synchronization are critical.

FAQ

What is the function of the DOFF pin on CY7C1620KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables DDR II operation with 1.5-cycle latency for improved timing margin; when low, it reverts to DDR I behavior with 1-cycle latency. This setting affects internal pipeline staging but does not alter pin compatibility or clocking requirements.

Can CY7C1620KV18-250BZXC operate without external C and C clocks?

Yes-it supports single-clock mode using only K and K for both input capture and output timing. In this mode, C and C pins are unused, and CQ/CQ derive from K/K. However, full DDR II performance and echo clock benefits require C/C connection and proper termination per the layout guidelines in the datasheet.

How is output impedance calibrated using the ZQ pin?

ZQ connects to a 240 Ω resistor to ground, enabling internal calibration of DQ[35:0], CQ, and CQ driver impedance to 48 Ω (0.2 × 240 Ω). This matches standard 60 Ω PCB traces within tolerance. Direct connection to VDDQ enables minimum impedance mode (~30 Ω); grounding or leaving ZQ floating is prohibited.

What is the role of BWS[3:0] in write operations?

BWS[3:0] are active-low byte write selects that gate 9-bit segments of the 36-bit DQ bus during writes. Each BWS controls one 9-bit byte (e.g., BWS0 → D[8:0]); unasserted BWS lines prevent corresponding data bits from being written, preserving prior contents without requiring read-modify-write cycles.