Infineon Technologies CY7C1623KV18-250BZXC
- Part No.:
- CY7C1623KV18-250BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1623KV18-250BZXC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1623KV18-250BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit (8 M × 18) DDR-II Synchronous Pipelined SRAM with Separate I/O architecture, operating at 250 MHz clock frequency (500 MT/s effective data rate), 1.8 V core supply, HSTL I/O, and 165-ball FBGA (15 × 17 × 1.4 mm) package. It supports two-word burst reads/writes, echo clocks (CQ/CQ), and programmable impedance via ZQ pin for high-speed memory subsystems in networking line cards and packet buffering applications.
For engineers reviewing the CY7C1623KV18-250BZXC datasheet, CY7C1623KV18-250BZXC pinout, CY7C1623KV18-250BZXC application, or CY7C1623KV18-250BZXC equivalent, key selection criteria include DDR-II SIO timing compliance, DOFF-controlled DDR-I/DDR-II mode switching, C/C and CQ/CQ clock pair routing, HSTL drive strength configuration, and 1.8 V core + flexible VDDQ (1.4–1.8 V) power domain management.
Technical Context
The device implements a synchronous pipelined architecture with independent read and write ports sharing a common address bus. Address latching occurs on alternating rising edges of complementary K/K clocks, while write data is registered on both K and K edges - enabling true DDR write capture without bus turnaround.
Read data is output-synchronized to C/C clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to C/C to eliminate board-level skew. The internal PLL ensures precise data placement, and DOFF pin selection determines whether operation follows DDR-II (1.5-cycle latency, 250 MHz max) or DDR-I (1-cycle latency, 167 MHz max) timing models.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 144 Mbit (8 M × 18); enables 2×18-bit burst transfers per clock cycle for high-throughput packet buffering. |
| Max Clock Frequency | 250 MHz (K/K); defines maximum sustained command rate for pipelined access sequences. |
| Data Rate | 500 MT/s (DDR); achieved by transferring two 18-bit words per K/K cycle using double-data-rate interface. |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); directly impacts memory controller pipeline depth and FIFO sizing. |
| Supply Voltages | 1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ); allows interoperability with 1.5 V or 1.8 V HSTL systems via VDDQ scaling. |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); supports fine-pitch routing for high-speed DDR signal integrity with controlled impedance traces. |
| Impedance Tuning | ZQ pin with external resistor to GND; calibrates output driver impedance to match PCB trace Z₀ (e.g., 50 Ω), reducing reflections. |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous Data Input | 18-bit write data sampled on rising edges of both K and K; supports byte-selectable writes via BWS0/BWS1. |
| Q[17:0] | Synchronous Data Output | 18-bit read data driven on rising edges of C/C (or K/K); automatically tri-stated when read port inactive. |
| K / K | Input Clock Pair | Complementary clocks for address/control/data input registration; rising edges define all synchronous timing references. |
| C / C | Output Clock Pair | Deskew-capable clocks for Q[17:0] output timing; used with CQ/CQ to align data capture across multiple devices. |
| CQ / CQ | Echo Clock Outputs | Free-running clocks synchronized to C/C; enable source-synchronous data capture without per-device delay calibration. |
| DOFF | PLL Enable Control | Active-low pin selecting DDR-II (HIGH) vs DDR-I (LOW) timing mode; changes read latency and max frequency. |
| ZQ | Impedance Calibration Input | Connects to external resistor to GND to tune output driver impedance; critical for signal integrity on >250 MHz buses. |
| R/W, LD, BWS[1:0] | Control Inputs | Synchronous control signals registered on K edge; LD defines bus cycle start, R/W selects direction, BWS enables partial writes. |
Key Features
| Feature | Design Value |
|---|---|
| DDR-II Separate I/O Architecture | Eliminates data bus turnaround overhead by dedicating D[17:0] to writes and Q[17:0] to reads - essential for full-duplex packet buffer operation. |
| Two-Word Burst Transfer | Delivers 36 bits per K/K cycle, halving required address bus toggling frequency versus single-word SRAMs - reduces controller logic complexity. |
| Programmable Output Impedance (ZQ) | Enables dynamic matching to PCB trace impedance without external termination resistors - improves signal fidelity and reduces BOM count. |
| Echo Clocks (CQ/CQ) | Provide source-synchronous timing references aligned to Q[17:0] outputs - simplifies high-speed data capture in multi-SRAM systems without complex deskew circuitry. |
| Configurable Read Latency (DOFF) | Allows runtime selection between DDR-II (1.5-cycle, 250 MHz) and DDR-I (1-cycle, 167 MHz) modes - supports design reuse across performance tiers. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet or SONET frames in real-time traffic shaping buffers. IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst SRAM serving as dual-port frame buffer with separate read/write paths. Use Value: 500 MT/s DDR-II throughput and zero bus turnaround enable full-line-rate buffering at 10 Gbps without stalls. |
Use Scenario: Holding ATM cell headers and payload segments in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing deterministic 1.5-cycle read latency for header lookup pipelines. Use Value: CQ/CQ echo clocks ensure reliable data capture across temperature/voltage variations in telecom-grade hardware. |
| High-Speed Test Equipment Memory | Industrial Protocol Gateway Buffer |
|
Use Scenario: Capturing high-frequency digital waveforms in automated test systems with deep sample memory. IC Role / Device Role / Timing Role: Burst-mode SRAM acting as acquisition buffer with simultaneous write (capture) and read (analysis) access. Use Value: Independent read/write ports allow concurrent streaming capture and post-processing - eliminating memory contention bottlenecks. |
Use Scenario: Bridging Modbus TCP and PROFIBUS DP protocols with real-time message translation and queuing. IC Role / Device Role / Timing Role: Low-power, 1.8 V SRAM providing deterministic latency for protocol state machine context storage. Use Value: DOFF pin enables fallback to DDR-I mode during brown-out conditions - preserving functionality at reduced speed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-25JCIN | 512 K × 18 Async SRAM, 25 ns access, no DDR, no echo clocks, 3.3 V only | Limited to non-burst, lower bandwidth applications requiring simple address/data multiplexing | Select only if system lacks DDR clock infrastructure and tolerates 10× lower throughput. |
| IS61WV102418BLL-15BLI | 1 M × 18 Sync SRAM, 15 ns cycle time, single data rate, no ZQ or CQ/CQ support | Suitable for moderate-speed control plane buffers where echo clock deskew is unnecessary | Choose when cost sensitivity outweighs need for DDR-II timing margin and impedance tuning. |
Compared with AS7C3256B-25JCIN and IS61WV102418BLL-15BLI, CY7C1623KV18-250BZXC delivers 5× higher effective bandwidth, eliminates bus turnaround delays, and provides on-die impedance calibration - making it uniquely suited for DDR-II–based packet processing pipelines.
Availability
CY7C1623KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and industrial protocol gateway buffer applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1623KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including legacy SRAMs optimized for deterministic timing and signal integrity in infrastructure applications.
This part belongs to the Cypress DDR-II SIO SRAM product line, designed specifically for high-throughput, low-latency memory subsystems in networking, telecom, and test equipment where bus turnaround elimination and echo-clock–assisted data capture are critical.
FAQ
What is the function of the DOFF pin, and how does it affect timing?
The DOFF pin controls the internal PLL: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency and supports up to 250 MHz clock frequency; when LOW, the PLL is disabled and the device reverts to DDR-I timing with 1-cycle latency and a maximum clock of 167 MHz. This allows system-level flexibility to trade latency for bandwidth or maintain operation under marginal voltage/temperature conditions.
How are CQ and CQ echo clocks used in system design?
CQ and CQ are free-running output clocks synchronized to C and C respectively, and are intended to be routed alongside Q[17:0] signals to the memory controller. They provide source-synchronous timing references that eliminate the need for per-device flight-time compensation, enabling robust data capture at 500 MT/s without complex receiver deskew logic or training sequences.
Can CY7C1623KV18-250BZXC operate with only one clock (K) instead of K/K?
No - the device requires both K and K differential clock inputs for all synchronous operations. The K/K pair is used to latch addresses, control signals, and write data; omitting either clock violates setup/hold timing and causes undefined behavior. In single-clock-domain systems, K and K must still be supplied as complementary signals derived from the same source.
What is the purpose of the ZQ pin, and how should it be connected?
ZQ enables on-die output impedance calibration: connecting an external resistor (typically 240 Ω) between ZQ and GND sets driver impedance to 0.2 × RQ (e.g., 48 Ω), matching standard PCB trace impedances. Leaving ZQ unconnected or tying it to GND is prohibited; connecting to VDDQ enables minimum-impedance mode but forfeits calibration accuracy.
CY7C1623KV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1623KV18-250BZXC FAQ
1.How can I place an order for CY7C1623KV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1623KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1623KV18-250BZXC reliable?
The price and inventory of CY7C1623KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1623KV18-250BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1623KV18-250BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1623KV18-250BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1623KV18-250BZXC?
CY7C1623KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1623KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1623KV18-250BZXC?
For technical support, including CY7C1623KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1623KV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1623KV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1623KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1623KV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1623KV18-250BZXC?
All CY7C1623KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1623KV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1623KV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1623KV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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