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Infineon Technologies CY7C1623KV18-250BZXC

Part No.:
CY7C1623KV18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1623KV18-250BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,842

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Product details

Overview

CY7C1623KV18-250BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit (8 M × 18) DDR-II Synchronous Pipelined SRAM with Separate I/O architecture, operating at 250 MHz clock frequency (500 MT/s effective data rate), 1.8 V core supply, HSTL I/O, and 165-ball FBGA (15 × 17 × 1.4 mm) package. It supports two-word burst reads/writes, echo clocks (CQ/CQ), and programmable impedance via ZQ pin for high-speed memory subsystems in networking line cards and packet buffering applications.

For engineers reviewing the CY7C1623KV18-250BZXC datasheet, CY7C1623KV18-250BZXC pinout, CY7C1623KV18-250BZXC application, or CY7C1623KV18-250BZXC equivalent, key selection criteria include DDR-II SIO timing compliance, DOFF-controlled DDR-I/DDR-II mode switching, C/C and CQ/CQ clock pair routing, HSTL drive strength configuration, and 1.8 V core + flexible VDDQ (1.4–1.8 V) power domain management.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a common address bus. Address latching occurs on alternating rising edges of complementary K/K clocks, while write data is registered on both K and K edges - enabling true DDR write capture without bus turnaround.

Read data is output-synchronized to C/C clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to C/C to eliminate board-level skew. The internal PLL ensures precise data placement, and DOFF pin selection determines whether operation follows DDR-II (1.5-cycle latency, 250 MHz max) or DDR-I (1-cycle latency, 167 MHz max) timing models.

Key Specifications

Parameter Value and Actual Design Meaning
Density 144 Mbit (8 M × 18); enables 2×18-bit burst transfers per clock cycle for high-throughput packet buffering.
Max Clock Frequency 250 MHz (K/K); defines maximum sustained command rate for pipelined access sequences.
Data Rate 500 MT/s (DDR); achieved by transferring two 18-bit words per K/K cycle using double-data-rate interface.
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); directly impacts memory controller pipeline depth and FIFO sizing.
Supply Voltages 1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ); allows interoperability with 1.5 V or 1.8 V HSTL systems via VDDQ scaling.
Package 165-ball FBGA (15 × 17 × 1.4 mm); supports fine-pitch routing for high-speed DDR signal integrity with controlled impedance traces.
Impedance Tuning ZQ pin with external resistor to GND; calibrates output driver impedance to match PCB trace Z₀ (e.g., 50 Ω), reducing reflections.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous Data Input 18-bit write data sampled on rising edges of both K and K; supports byte-selectable writes via BWS0/BWS1.
Q[17:0] Synchronous Data Output 18-bit read data driven on rising edges of C/C (or K/K); automatically tri-stated when read port inactive.
K / K Input Clock Pair Complementary clocks for address/control/data input registration; rising edges define all synchronous timing references.
C / C Output Clock Pair Deskew-capable clocks for Q[17:0] output timing; used with CQ/CQ to align data capture across multiple devices.
CQ / CQ Echo Clock Outputs Free-running clocks synchronized to C/C; enable source-synchronous data capture without per-device delay calibration.
DOFF PLL Enable Control Active-low pin selecting DDR-II (HIGH) vs DDR-I (LOW) timing mode; changes read latency and max frequency.
ZQ Impedance Calibration Input Connects to external resistor to GND to tune output driver impedance; critical for signal integrity on >250 MHz buses.
R/W, LD, BWS[1:0] Control Inputs Synchronous control signals registered on K edge; LD defines bus cycle start, R/W selects direction, BWS enables partial writes.

Key Features

Feature Design Value
DDR-II Separate I/O Architecture Eliminates data bus turnaround overhead by dedicating D[17:0] to writes and Q[17:0] to reads - essential for full-duplex packet buffer operation.
Two-Word Burst Transfer Delivers 36 bits per K/K cycle, halving required address bus toggling frequency versus single-word SRAMs - reduces controller logic complexity.
Programmable Output Impedance (ZQ) Enables dynamic matching to PCB trace impedance without external termination resistors - improves signal fidelity and reduces BOM count.
Echo Clocks (CQ/CQ) Provide source-synchronous timing references aligned to Q[17:0] outputs - simplifies high-speed data capture in multi-SRAM systems without complex deskew circuitry.
Configurable Read Latency (DOFF) Allows runtime selection between DDR-II (1.5-cycle, 250 MHz) and DDR-I (1-cycle, 167 MHz) modes - supports design reuse across performance tiers.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress Ethernet or SONET frames in real-time traffic shaping buffers.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst SRAM serving as dual-port frame buffer with separate read/write paths.

Use Value: 500 MT/s DDR-II throughput and zero bus turnaround enable full-line-rate buffering at 10 Gbps without stalls.

Use Scenario: Holding ATM cell headers and payload segments in OC-192/STM-64 line interface units.

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing deterministic 1.5-cycle read latency for header lookup pipelines.

Use Value: CQ/CQ echo clocks ensure reliable data capture across temperature/voltage variations in telecom-grade hardware.

High-Speed Test Equipment Memory Industrial Protocol Gateway Buffer

Use Scenario: Capturing high-frequency digital waveforms in automated test systems with deep sample memory.

IC Role / Device Role / Timing Role: Burst-mode SRAM acting as acquisition buffer with simultaneous write (capture) and read (analysis) access.

Use Value: Independent read/write ports allow concurrent streaming capture and post-processing - eliminating memory contention bottlenecks.

Use Scenario: Bridging Modbus TCP and PROFIBUS DP protocols with real-time message translation and queuing.

IC Role / Device Role / Timing Role: Low-power, 1.8 V SRAM providing deterministic latency for protocol state machine context storage.

Use Value: DOFF pin enables fallback to DDR-I mode during brown-out conditions - preserving functionality at reduced speed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256B-25JCIN 512 K × 18 Async SRAM, 25 ns access, no DDR, no echo clocks, 3.3 V only Limited to non-burst, lower bandwidth applications requiring simple address/data multiplexing Select only if system lacks DDR clock infrastructure and tolerates 10× lower throughput.
IS61WV102418BLL-15BLI 1 M × 18 Sync SRAM, 15 ns cycle time, single data rate, no ZQ or CQ/CQ support Suitable for moderate-speed control plane buffers where echo clock deskew is unnecessary Choose when cost sensitivity outweighs need for DDR-II timing margin and impedance tuning.

Compared with AS7C3256B-25JCIN and IS61WV102418BLL-15BLI, CY7C1623KV18-250BZXC delivers 5× higher effective bandwidth, eliminates bus turnaround delays, and provides on-die impedance calibration - making it uniquely suited for DDR-II–based packet processing pipelines.

Availability

CY7C1623KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and industrial protocol gateway buffer applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1623KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including legacy SRAMs optimized for deterministic timing and signal integrity in infrastructure applications.

This part belongs to the Cypress DDR-II SIO SRAM product line, designed specifically for high-throughput, low-latency memory subsystems in networking, telecom, and test equipment where bus turnaround elimination and echo-clock–assisted data capture are critical.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin controls the internal PLL: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency and supports up to 250 MHz clock frequency; when LOW, the PLL is disabled and the device reverts to DDR-I timing with 1-cycle latency and a maximum clock of 167 MHz. This allows system-level flexibility to trade latency for bandwidth or maintain operation under marginal voltage/temperature conditions.

How are CQ and CQ echo clocks used in system design?

CQ and CQ are free-running output clocks synchronized to C and C respectively, and are intended to be routed alongside Q[17:0] signals to the memory controller. They provide source-synchronous timing references that eliminate the need for per-device flight-time compensation, enabling robust data capture at 500 MT/s without complex receiver deskew logic or training sequences.

Can CY7C1623KV18-250BZXC operate with only one clock (K) instead of K/K?

No - the device requires both K and K differential clock inputs for all synchronous operations. The K/K pair is used to latch addresses, control signals, and write data; omitting either clock violates setup/hold timing and causes undefined behavior. In single-clock-domain systems, K and K must still be supplied as complementary signals derived from the same source.

What is the purpose of the ZQ pin, and how should it be connected?

ZQ enables on-die output impedance calibration: connecting an external resistor (typically 240 Ω) between ZQ and GND sets driver impedance to 0.2 × RQ (e.g., 48 Ω), matching standard PCB trace impedances. Leaving ZQ unconnected or tying it to GND is prohibited; connecting to VDDQ enables minimum-impedance mode but forfeits calibration accuracy.

CY7C1623KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1623KV18-250BZXC FAQ

1.How can I place an order for CY7C1623KV18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1623KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1623KV18-250BZXC reliable?

The price and inventory of CY7C1623KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1623KV18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1623KV18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1623KV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1623KV18-250BZXC?

CY7C1623KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1623KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1623KV18-250BZXC?

For technical support, including CY7C1623KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1623KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1623KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1623KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1623KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1623KV18-250BZXC?

All CY7C1623KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1623KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1623KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1623KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1623KV18-250BZXC Tags

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