Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1625KV18-250BZXC

Part No.:
CY7C1625KV18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1625KV18-250BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,136

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1625KV18-250BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit QDR® II SRAM with 16M × 9 organization, 250 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces, two-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers and switch fabric memory.

For engineers reviewing the CY7C1625KV18-250BZXC datasheet, CY7C1625KV18-250BZXC pinout, CY7C1625KV18-250BZXC application, or CY7C1625KV18-250BZXC equivalent, key selection criteria include 250 MHz clock support, 165-ball FBGA (15 × 17 mm) package compatibility, QDR II read latency modes (1-cycle vs. 1.5-cycle), DOFF-controlled latency selection, and HSTL-18 I/O drive compliance.

Technical Context

This device uses synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent read/write transactions without bus turnaround.

It integrates a PLL for precise data placement, supports single-clock mode via K/K reuse, and delivers 720 Mbps per data line using DDR on both ports. Echo clocks CQ/CQ align with output data to simplify timing closure in systems operating at 250 MHz (500 MT/s).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (16M × 9 configuration)
Max Clock Frequency 250 MHz - defines maximum sustained transaction rate of 500 million transfers/sec
Core Supply Voltage 1.8 V ± 0.1 V - powers internal logic and array; requires tight regulation
I/O Supply Range 1.4 V to 1.8 V - supports HSTL-18 interface standard with adjustable drive strength
Read Latency Mode Selectable: 1-cycle (DOFF = low) or 1.5-cycle (DOFF = high) - determines timing margin for controller setup/hold
Package 165-ball FBGA (15 × 17 × 1.4 mm) - fine-pitch, thermally enhanced, RoHS-compliant
Data Interface DDR on both read and write ports - enables double-data-rate transfer per clock edge

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data inputs Sampled on rising edge of K clock; 9-bit parallel input for burst writes
Q[8:0] Synchronous read data outputs Driven on rising edges of C/C clocks; tristated when RPS is deasserted
RPS Read port select (active low) Enables read access; sampled on rising edge of K; controls Q[8:0] output enable
WPS Write port select (active low) Enables write access; sampled on rising edge of K; gates D[8:0] into memory
BWS0 Byte write select (active low) Controls write enable for all 9 bits; no partial-byte masking supported in ×9 config
K / K Positive/negative input clocks Used for address/data sampling; K only used for rising-edge timing in standard operation
C / C Positive/negative output clocks Clock read data out; paired with CQ/CQ for source-synchronous capture
CQ / CQ Echo clocks (output) Source-synchronous with Q[8:0]; reduce skew impact in high-speed PCB routing
DOFF Read latency mode control High = 1.5-cycle latency (QDR II mode); low = 1-cycle latency (QDR I compatibility)
VDD / VDDQ Core / I/O power supplies VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.8 V - separate supplies allow I/O voltage scaling

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround overhead; enables true concurrent read+write in same cycle
Two-word burst architecture Each access delivers two sequential 9-bit words - doubles effective bandwidth over single-word devices
HSTL-18 compatible outputs Programmable drive strength supports impedance-matched routing on high-speed backplanes
JTAG 1149.1 test access port Enables boundary scan testing and system-level debug without additional test fixtures
PLL-based clock management Minimizes internal clock skew; ensures accurate data-eye alignment at 250 MHz operation

Applications

Networking Switch Fabric Telecom Line Card Buffer

Use Scenario: High-throughput packet buffering in Layer 2/L3 switches handling 10G/25G Ethernet traffic.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as ingress/egress queue memory with zero-bus-turnaround concurrency.

Use Value: 250 MHz clock + DDR interface delivers 4.5 Gbps sustained bandwidth per port, meeting strict latency budgets for cut-through forwarding.

Use Scenario: Real-time packet classification and buffering in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: QDR II memory providing deterministic read/write access for TCAM-assisted lookup engines.

Use Value: 1.5-cycle read latency (DOFF = high) ensures predictable timing margins for SERDES-aligned data paths operating at 250 MHz.

Baseband Processing Memory Test Equipment Pattern Memory

Use Scenario: Shared memory between DSP cores and FPGA accelerators in 5G NR baseband units.

IC Role / Device Role / Timing Role: Low-latency, high-bandwidth scratchpad for FFT/IFFT and channel estimation buffers.

Use Value: Independent read/write ports allow simultaneous DMA fetch and result store, eliminating pipeline stalls in real-time signal processing.

Use Scenario: High-speed digital pattern generation and capture in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: Deterministic-access memory storing stimulus/response vectors synchronized to 250 MHz ATE clocks.

Use Value: Echo clocks (CQ/CQ) enable precise source-synchronous capture at 500 MT/s, reducing jitter-induced bit errors in pattern verification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1625KV18-333BZXC Higher max frequency (333 MHz); identical pinout, timing, and voltage specs Requires tighter PCB layout control and higher-grade clock distribution for stable 333 MHz operation Select when system clock budget allows >250 MHz and bandwidth demand exceeds 5.9 Gbps per port
AS7C3256B-25JC Asynchronous CMOS SRAM; no DDR, no echo clocks, no separate ports; 25 ns access time Limited to low-frequency control-plane memory; cannot support concurrent read/write or high-speed serial interfaces Only suitable for non-critical, low-bandwidth buffering where QDR II features are unnecessary

Compared with CY7C1625KV18-250BZXC, the -333BZXC variant offers +33% bandwidth headroom at identical voltage and packaging, while the AS7C3256B-25JC lacks QDR architecture entirely-making it incompatible for any application requiring true dual-port concurrency or source-synchronous timing.

Availability

CY7C1625KV18-250BZXC is available at Aetrix Electronics and suitable for networking switch fabric, telecom line card buffer, and baseband processing applications requiring stable component supply, long-term lifecycle support, and verified QDR II interoperability.

Supply support for CY7C1625KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the QDR II SRAM portfolio originally developed by Cypress.

This device belongs to Infineon's high-performance memory product line, designed specifically for deterministic, low-latency, high-bandwidth applications in networking infrastructure and communications equipment.

FAQ

What is the function of the DOFF pin on CY7C1625KV18-250BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted high, it enables 1.5-cycle latency (standard QDR II operation); when low, it reduces latency to 1 cycle for QDR I compatibility. This setting directly affects controller timing constraints and must be configured before initialization and held stable during operation.

Can CY7C1625KV18-250BZXC operate with only one clock signal (K only)?

Yes - the device supports single-clock mode where K serves as both input and output clock. In this configuration, C and C are tied to K and K respectively, and echo clocks CQ/CQ remain functional. However, dual-clock mode (separate K/K and C/C) is required to achieve optimal skew cancellation in multi-device systems.

Is the 165-ball FBGA package of CY7C1625KV18-250BZXC RoHS compliant?

Yes - the BZXC suffix denotes a lead-free (Pb-free), RoHS-compliant 165-ball FBGA package with matte tin finish. It meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) and is qualified for reflow soldering per IPC/JEDEC J-STD-020 standards.

How does byte write select (BWS0) function in the 16M × 9 configuration?

In CY7C1625KV18-250BZXC, BWS0 is the sole byte write select and operates as a global enable for all 9 data bits (D[8:0]). When deasserted (high), no write occurs; when asserted (low), the full 9-bit word is written. Unlike wider configurations, ×9 does not support partial-byte writes - BWS0 is not subdivided.

CY7C1625KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
144Mbit
Memory Organization:
16M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1625KV18-250BZXC FAQ

1.How can I place an order for CY7C1625KV18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1625KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1625KV18-250BZXC reliable?

The price and inventory of CY7C1625KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1625KV18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1625KV18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1625KV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1625KV18-250BZXC?

CY7C1625KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1625KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1625KV18-250BZXC?

For technical support, including CY7C1625KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1625KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1625KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1625KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1625KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1625KV18-250BZXC?

All CY7C1625KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1625KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1625KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1625KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1625KV18-250BZXC Tags

  • CY7C1625KV18-250BZXC
  • CY7C1625KV18-250BZXC PDF
  • CY7C1625KV18-250BZXC Datasheet
  • CY7C1625KV18-250BZXC Specifications
  • CY7C1625KV18-250BZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1625KV18-250BZXC
  • Buy CY7C1625KV18-250BZXC
  • CY7C1625KV18-250BZXC Price
  • CY7C1625KV18-250BZXC Distributor
  • CY7C1625KV18-250BZXC Supplier
  • CY7C1625KV18-250BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER