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Infineon Technologies CY7C1625KV18-250BZXI

Part No.:
CY7C1625KV18-250BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1625KV18-250BZXI.pdf
Description:
IC SRAM 144MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,912

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Product details

Overview

CY7C1625KV18 from Infineon Technologies (formerly Cypress) is a 16M × 9, 144-Mbit QDR® II SRAM with separate read/write ports, 360-MHz clock operation (720-MHz DDR data rate), 1.8-V core supply, and 1.4–1.8-V I/O supply - deployed in high-bandwidth networking buffers, packet classification engines, and FPGA-based protocol accelerators.

For engineers reviewing the CY7C1625KV18 datasheet, CY7C1625KV18 pinout, CY7C1625KV18 application, or CY7C1625KV18 equivalent, key selection criteria include its two-word burst architecture, echo clock (CQ/CQ) support for timing margin recovery, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and 165-ball FBGA package compatibility with high-speed PCB routing constraints.

Technical Context

The CY7C1625KV18 implements true dual-port QDR II architecture: independent K/K clocks control write address/data latching, while C/C clocks govern read data output timing - enabling concurrent read/write transactions without bus turnaround. Its internal 8M × 9 array is accessed via multiplexed 23-bit address bus, with RPS/WPS enabling port-level arbitration.

It integrates a PLL for precise data-eye placement, HSTL Class I/II programmable drive strength outputs, JTAG 1149.1 boundary scan, and synchronous self-timed writes. The DOFF pin selects between 1.5-cycle (DOFF = high) and 1-cycle (DOFF = low) read latency modes - matching QDR I or optimizing for QDR II throughput.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (16M × 9 organization)
Max Clock Frequency 360 MHz - enables 720 MT/s DDR data rate on both ports
Read Latency Configurable: 1 cycle (DOFF = low) or 1.5 cycles (DOFF = high)
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports 1.5 V or 1.8 V interface levels
Burst Length Fixed two-word burst per access - eliminates variable-latency address decoding overhead
Package 165-ball FBGA (15 × 17 × 1.4 mm) - fine-pitch layout optimized for controlled-impedance routing
Interface Standard HSTL Class I/II - ensures signal integrity at >700 Mbps per pin with matched termination

Pinout & Package

165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8-mm ball pitch and standard HSTL-compatible ball assignment.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data inputs Latched on rising edge of K clock; 9-bit parallel input path for burst writes
Q[8:0] Synchronous read data outputs Driven on rising edges of C/C clocks; tristated when RPS is deasserted
RPS Read port select (active low) Enables read transaction; output drivers auto-tristate after completion if deasserted
WPS Write port select (active low) Enables write transaction; D[8:0] ignored when deasserted
BWS0 Byte write select (active low) Controls write enable for all 9 bits; no partial-byte masking capability
K / K Positive/negative write/read clock inputs Edge-triggered address/data capture; K used for write, K for read address latching
C / C Positive/negative output clock inputs Deskew pair for read data; determines output timing alignment across multiple devices
CQ / CQ Echo clocks (output) Replicate C/C timing at receiver; simplify capture in source-synchronous systems
DOFF Read latency mode control High = 1.5-cycle latency (QDR II mode); low = 1-cycle latency (QDR I compatibility)
VREF Reference voltage input Provides mid-supply reference for HSTL input receivers; requires external 0.7×VDDQ bias
ZQ Impedance calibration terminal Connects to 240-Ω external resistor to ground for on-die output driver impedance tuning

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround delay - enables full-duplex memory access at peak bandwidth
Two-word burst architecture Reduces address strobe overhead by 50% vs. single-word devices; fixed burst simplifies controller logic
Echo clock (CQ/CQ) outputs Deliver clock-aligned copies of C/C at device output pins - removes flight-time uncertainty in high-speed capture
Programmable output drive strength HSTL Class I/II selectable via ZQ calibration - matches trace impedance without external resistors
JTAG 1149.1 boundary scan Enables in-system testability and interconnect verification without physical probe access
DOFF-configurable latency Allows migration from legacy QDR I designs (1-cycle) or optimization for new QDR II systems (1.5-cycle)

Applications

Network Packet Buffering FPGA-Based Protocol Acceleration

Use Scenario: Storing ingress/egress packet headers and metadata in 10/25/100 GbE line cards with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state buffer between MAC and traffic manager; reads/writes occur concurrently on separate clocks.

Use Value: 720 MT/s effective bandwidth and 1-cycle read latency (DOFF = low) meet sub-10 ns round-trip timing requirements for header lookup pipelines.

Use Scenario: Offloading TCP/IP checksum, VLAN tagging, and GRE encapsulation in reconfigurable compute platforms.

IC Role / Device Role / Timing Role: High-throughput memory scratchpad for FPGA soft-core processors executing packet-modification microcode.

Use Value: Two-word burst + DDR interface reduces instruction fetch stalls by 40% vs. SDR SRAM, increasing pipeline utilization in real-time packet processing.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Holding channel estimation coefficients and FFT window data in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Burst-access memory interfaced to multi-lane SerDes PHYs; C/C echo clocks synchronize data capture across parallel ADC/DAC channels.

Use Value: 1.5-cycle latency mode (DOFF = high) provides deterministic 2.78 ns timing margin for 360-MHz sampling clocks in closed-loop feedback loops.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for SoC validation at >500 MHz pattern rates.

IC Role / Device Role / Timing Role: Deterministic-access memory feeding high-speed pattern generators; JTAG scan enables per-pin fault isolation during production test.

Use Value: HSTL I/O compliance and ZQ-calibrated outputs ensure <±5 ps skew across 16-bit wide data buses - critical for vector timing accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 16M × 9 QDR II+ (400 MHz max), 1.5-V core, integrated DLL instead of PLL Higher frequency but tighter VDD tolerance (1.5 V ±3%); requires different power sequencing Choose for >360 MHz operation where board-level jitter budget allows tighter supply regulation
ISSI IS61WV102416BLL-10TLI 1M × 16 async SRAM, 10 ns access, no DDR/QDR architecture No concurrent read/write; lacks echo clocks, burst, or JTAG - suitable only for low-frequency buffering Select only for cost-sensitive, non-real-time applications where bandwidth <200 MB/s suffices

Compared with IDT72T3615L10BG and IS61WV102416BLL-10TLI, the CY7C1625KV18 uniquely balances 360-MHz QDR II performance with flexible latency configuration, echo-clock timing resilience, and mature JTAG test infrastructure - making it optimal for telecom and test equipment where deterministic timing and debug visibility are mandatory.

Availability

CY7C1625KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply across multi-year production cycles.

Supply support for CY7C1625KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, for mission-critical infrastructure applications.

This device belongs to Infineon's QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in networking, wireless infrastructure, and automated test systems.

FAQ

What is the function of the DOFF pin on CY7C1625KV18?

The DOFF (Data Output Fall-off) pin configures read latency mode: when asserted high, it enables 1.5-cycle latency for QDR II operation with improved timing margin; when low, it selects 1-cycle latency for QDR I compatibility. This setting is sampled synchronously on the K clock edge at power-up or reset and remains static during operation.

Can CY7C1625KV18 operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together), allowing simplified timing closure in systems without dedicated echo clock routing. In this mode, data is clocked using K/K for both read and write, and output timing follows K/K edges directly without deskew compensation.

How does ZQ calibration work on CY7C1625KV18?

ZQ calibration uses an external 240-Ω resistor connected between the ZQ pin and ground to tune internal output driver impedance to match PCB trace impedance. The calibration occurs automatically at power-up and can be retriggered via JTAG command. It adjusts HSTL Class I/II drive strength to maintain ±10% impedance accuracy across voltage/temperature.

Is the 165-ball FBGA package lead-free?

Yes - the CY7C1625KV18-250BZXI variant is specified with Pb-free (RoHS-compliant) finish per ordering code suffix 'X'. The package uses matte tin over nickel underplate on all solder balls and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.

CY7C1625KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
144Mbit
Memory Organization:
16M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1625KV18-250BZXI FAQ

1.How can I place an order for CY7C1625KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1625KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1625KV18-250BZXI reliable?

The price and inventory of CY7C1625KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1625KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1625KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1625KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1625KV18-250BZXI?

CY7C1625KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1625KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1625KV18-250BZXI?

For technical support, including CY7C1625KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1625KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1625KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1625KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1625KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1625KV18-250BZXI?

All CY7C1625KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1625KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1625KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1625KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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