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Infineon Technologies CY7C1645KV18-400BZXI

Part No.:
CY7C1645KV18-400BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1645KV18-400BZXI.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,516

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Product details

Overview

CY7C1645KV18 from Cypress Semiconductor is a 4-M × 36-bit, 144-Mbit QDR® II+ SRAM with 2.0-cycle read latency, 400 MHz clock operation (800 Mbps DDR per port), 1.8-V core supply, and 1.4–1.8-V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and JTAG 1149.1 test access-designed for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C1645KV18 datasheet, CY7C1645KV18 pinout, CY7C1645KV18 application, or CY7C1645KV18 equivalent, key selection criteria include its 4-word burst architecture, synchronous self-timed writes, DOFF-configurable latency mode (QDR I vs. QDR II+), HSTL I/O compatibility, and 165-ball FBGA package footprint.

Technical Context

The CY7C1645KV18 implements a true dual-port QDR II+ architecture with independent read and write pipelines, enabling concurrent transactions without bus turnaround. Its 20-bit address bus accesses a 4-M × 36 memory array organized as four 1-M × 36 sub-arrays, with addresses latched on alternating edges of K/K clocks.

It integrates an internal PLL for precise data placement and uses echo clocks (CQ/CQ) aligned to output data for simplified high-speed capture. The DOFF pin selects between 2.0-cycle QDR II+ mode (up to 400 MHz) and 1-cycle QDR I mode (≤167 MHz), while ZQ enables programmable output impedance matching to system bus termination.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (4 M × 36 configuration)
Max Clock Frequency 400 MHz - supports 800 Mbps DDR data rate per port
Read Latency 2.0 clock cycles - fixed when DOFF = HIGH; enables deterministic timing for pipeline synchronization
Core Supply Voltage 1.8 V ± 0.1 V - defines minimum power rail stability requirement for reliable SRAM cell operation
I/O Supply Range 1.4 V to 1.8 V - supports interoperability with both 1.5-V and 1.8-V HSTL systems
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 400 MHz with controlled slew and termination

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8-mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit parallel data driven on rising edges of K/K; tri-stated when RPS is deasserted
RPS Read port select Active-low control sampled on K rising edge; initiates 4-word burst read and enables Q[35:0] drivers
WPS Write port select Active-low control sampled on K rising edge; enables D[35:0] sampling and internal write path activation
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); preserves unselected bytes during partial writes
K / K Differential clock inputs Positive/negative input clocks - all synchronous operations timed to rising edges of K and K only
CQ / CQ Echo clock outputs Free-running, phase-aligned copies of K/K - used by external logic to latch Q[35:0] with minimal skew
QVLD Data validity indicator Output pulse edge-aligned with CQ/CQ - signals when Q[35:0] contains valid burst data, not just clock-aligned
DOFF PLL disable control Active-low pin - disables internal PLL to revert to QDR I timing (1-cycle latency, ≤167 MHz max)
ZQ Impedance calibration reference Connects to external resistor to ground (RQ); sets CQ/CQ/Q[35:0] output drive strength to 0.2 × RQ

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead and prevents data contention in full-duplex memory access
Four-word burst architecture Reduces effective address bus frequency by 4× - e.g., 400 MHz clock supports 100 MHz-equivalent address rate
2.0-cycle read latency with DOFF control Enables deterministic timing closure in high-speed pipelines; DOFF=HIGH locks QDR II+ mode for predictable 400 MHz operation
HSTL I/O with programmable drive ZQ-based impedance tuning ensures consistent signal integrity across voltage/temperature/process corners
JTAG 1149.1 boundary scan Supports IEEE-compliant testing and debug of interconnects in dense PCB layouts with 165-ball FBGA

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, concurrent-access buffer between ingress parser and egress scheduler logic.

Use Value: 400 MHz clock + 4-word burst delivers 11.52 GB/s aggregate bandwidth (5.76 GB/s per port), sustaining 100 GbE line-rate buffering without stalls.

Use Scenario: Capturing real-time waveform samples in automated test equipment with >1 GS/s sampling rates.

IC Role / Device Role / Timing Role: High-throughput acquisition memory interfacing directly to ADC/DAC controllers with separate read/write timing domains.

Use Value: Independent RPS/WPS controls enable seamless ping-pong buffering - one port writes new samples while the other reads out processed data, eliminating dead time.

Telecom Baseband Processing AI Accelerator On-Chip Cache

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in 5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency, burst-capable memory co-located with DSP clusters to minimize data movement across high-speed interconnects.

Use Value: QVLD-synchronized output and echo clocks (CQ/CQ) reduce setup/hold margin requirements, enabling reliable 400 MHz operation in thermally constrained RF modules.

Use Scenario: Serving as L2/L3 cache for tensor processing units requiring deterministic memory access in AI inference accelerators.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM providing guaranteed 2-cycle read response to tightly coupled compute cores.

Use Value: DOFF-configurable latency allows runtime switching between QDR II+ (high bandwidth) and QDR I (lower power) modes based on workload intensity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150 36-bit × 2 M (72 Mbit), 350 MHz max, no integrated PLL, requires external echo clock generation Lacks DOFF-configurable latency and ZQ impedance tuning; limited to fixed 1.5-cycle latency Select when lower density suffices and system-level echo clock synthesis is already implemented
ISSI IS61WV102432BLL 32-bit × 1 M (32 Mbit), asynchronous interface, 166 MHz max, no burst or DDR capability Single-port, non-burst, non-pipelined - unsuitable for concurrent read/write or high-throughput streaming Only consider for cost-sensitive, low-bandwidth control-plane buffering where QDR features are unnecessary

Compared with IDT72T36150 and IS61WV102432BLL, the CY7C1645KV18 delivers 2× higher density, 14% higher clock rate, integrated PLL timing control, and hardware-supported burst/echo/QVLD features essential for deterministic 100+ GbE packet processing.

Availability

CY7C1645KV18 is available at Aetrix Electronics and suitable for network switch fabric design, high-speed test instrumentation, telecom baseband subsystems, and AI accelerator memory subsystems requiring stable component supply across multi-year production cycles.

Supply support for CY7C1645KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The QDR® II+ SRAM product line targets applications demanding deterministic latency, concurrent dual-port access, and DDR bandwidth without bus turnaround - especially in infrastructure-grade communications equipment.

FAQ

What is the function of the DOFF pin on CY7C1645KV18?

The DOFF (PLL Disable) pin is an active-low control that disables the internal phase-locked loop. When tied LOW, the device operates in QDR I mode with 1-cycle read latency and a maximum clock frequency of 167 MHz. When HIGH, it enables QDR II+ mode with 2.0-cycle latency and up to 400 MHz operation. This pin must be pulled up via ≤10 kΩ resistor for normal QDR II+ use.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor (RQ) to ground, calibrating the output impedance of Q[35:0], CQ, and CQ to 0.2 × RQ. For example, a 50-Ω RQ yields 10-Ω driver impedance. Connecting ZQ directly to VDDQ enables minimum impedance mode. ZQ must never be left floating or tied to GND, as this disables impedance control and risks signal integrity failure.

Can CY7C1645KV18 perform simultaneous read and write operations?

Yes - the CY7C1645KV18 supports true concurrent read and write transactions due to physically separate read and write data paths, independent port selects (RPS/WPS), and shared but edge-multiplexed address bus. Each port operates on its own timing domain synchronized to K/K, enabling full-duplex memory access without arbitration or bus turnaround delays.

What is the role of QVLD in system timing design?

QVLD is a synchronous output pulse edge-aligned with CQ and CQ, indicating precisely when Q[35:0] carries valid burst data. Unlike simple clock alignment, QVLD accounts for internal propagation delays and guarantees data stability window - allowing downstream logic to sample Q[35:0] with relaxed setup/hold margins and eliminating need for complex strobe deskew circuits.

CY7C1645KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
4M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1645KV18-400BZXI FAQ

1.How can I place an order for CY7C1645KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1645KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1645KV18-400BZXI reliable?

The price and inventory of CY7C1645KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1645KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1645KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1645KV18-400BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1645KV18-400BZXI?

CY7C1645KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1645KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1645KV18-400BZXI?

For technical support, including CY7C1645KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1645KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C1645KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1645KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1645KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1645KV18-400BZXI?

All CY7C1645KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1645KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1645KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C1645KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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