Infineon Technologies CY7C1650KV18-450BZC
- Part No.:
- CY7C1650KV18-450BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1650KV18-450BZC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,594
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Product details
Overview
CY7C1650KV18-450BZC from Cypress Semiconductor is a 144-Mbit QDR® II SRAM with 8 M × 18 organization, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces on both, four-word burst architecture, and 1.5-cycle read latency (DOFF = high), targeting high-bandwidth packet buffering in network switches and routers.
For engineers reviewing the CY7C1650KV18-450BZC datasheet, CY7C1650KV18-450BZC pinout, CY7C1650KV18-450BZC application, or CY7C1650KV18-450BZC equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) support for timing margin recovery, HSTL-18 I/O compatibility, and 165-ball FBGA (15 × 17 × 1.4 mm) package constraints.
Technical Context
The device uses dual independent clock domains: K/K for address/data capture and C/C for output data timing, enabling precise DDR alignment without bus turnaround. Its internal PLL ensures accurate data placement relative to echo clocks CQ/CQ, critical for >666 MT/s system-level data capture.
It supports depth expansion via RPS/WPS and byte write control (BWS0/BWS1), allowing flexible memory subsystem scaling. The DOFF pin selects between QDR II mode (1.5-cycle latency) and QDR I–compatible mode (1-cycle latency), providing design flexibility across generations of controller IP.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (8 M × 18) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s per port via DDR |
| Read Latency | 1.5 cycles (DOFF = high) - balances bandwidth and timing margin |
| Core Supply Voltage | 1.8 V ±0.1 V - defines minimum power rail stability requirement |
| I/O Supply Range | 1.4 V to 1.8 V - supports HSTL-18 and compatible termination schemes |
| Burst Length | Four 18-bit words per access - reduces address bus toggling by 75% |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - matches JEDEC MO-270AB standard |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; full 18-bit parallel write path |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated when RPS inactive |
| K, K | Positive/negative input clocks | Capture all synchronous inputs (address, control, data); define write timing domain |
| C, C | Positive/negative output clocks | Control Q[17:0] output timing; enable deskew with CQ/CQ |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies used by controller for reliable data capture |
| RPS, WPS | Read/write port select (active low) | Enable independent port activation; support depth expansion with multiple devices |
| BWS0, BWS1 | Byte write selects (active low) | Control D[8:0] and D[17:9] respectively; allow partial-word writes without read-modify-write |
| DOFF | Double-output-off control | High = QDR II mode (1.5-cycle latency); low = QDR I mode (1-cycle latency) |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q/CQ drive strength to 0.2×RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround, enabling true concurrent transactions without arbitration logic |
| Four-word burst architecture | Reduces required address transitions by 75% per access, lowering routing congestion and skew sensitivity |
| Echo clocks (CQ/CQ) | Provide controller-synchronized timing references for robust >666 MT/s data capture in multi-drop topologies |
| Programmable output impedance (ZQ) | Enables on-die termination tuning to match PCB trace impedance, reducing signal integrity margin loss |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system debug without requiring additional test pads or probes |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: High-speed packet buffering in 10/40/100 GbE switch fabric ASICs where ingress/egress traffic must be stored and forwarded with minimal latency. IC Role / Device Role / Timing Role: Dedicated QDR II SRAM serving as line-rate buffer with simultaneous read (forwarding engine) and write (ingress parser) operations. Use Value: 666 MT/s per port sustains full line-rate throughput; echo clocks ensure deterministic setup/hold at 333 MHz controller interface. |
Use Scenario: Frame buffering in carrier-grade SDH/SONET and OTN line cards handling OC-192/STM-64 payloads. IC Role / Device Role / Timing Role: Burst-mode memory interfacing with SerDes PHYs and framer ICs requiring low-latency, high-throughput data staging. Use Value: Four-word burst reduces address bus frequency by 4×, easing layout in dense backplane designs; DOFF pin allows backward compatibility with legacy QDR I controllers. |
| Baseband Processing Memory | Test Equipment Data Capture |
|
Use Scenario: Real-time channel estimation and precoding buffers in LTE-A and 5G massive MIMO baseband units. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong buffer between FFT/IFFT engines and digital pre-distortion modules. Use Value: Independent RPS/WPS enables seamless buffer switching without pipeline stalls; HSTL-18 I/O ensures clean signal integrity at 333 MHz. |
Use Scenario: High-fidelity waveform capture in automated test equipment (ATE) for semiconductor validation at >1 Gb/s sampling rates. IC Role / Device Role / Timing Role: High-bandwidth memory staging raw ADC samples before compression and offload to host processor. Use Value: 1.5-cycle latency (DOFF = high) maximizes effective bandwidth while maintaining timing margin; ZQ calibration adapts to varying board stackup losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10PA | 144-Mbit (4 M × 36), 250 MHz max clock, no echo clocks, LVDS I/O | Lower bandwidth; requires external deskew circuitry; suited for cost-sensitive telecom control planes | Select when system clock < 300 MHz and echo clock support is unnecessary |
| ISSI IS61WV102418BLL-10BLI | 18-Mbit (512 K × 36), 100 MHz async SRAM, single-port, CMOS I/O | Non-burst, non-pipelined, no concurrent access; limited to low-throughput control storage | Only suitable for boot code or configuration storage-not a functional replacement |
Compared with IDT72T3615L10PA and IS61WV102418BLL-10BLI, CY7C1650KV18-450BZC delivers 33% higher bandwidth, built-in echo clock timing recovery, and true concurrent read/write-making it uniquely suited for line-rate packet processing where deterministic latency and maximum throughput are mandatory.
Availability
CY7C1650KV18-450BZC is available at Aetrix Electronics and suitable for network switch fabric design, telecom line card development, and 5G baseband processing requiring stable component supply across multi-year production cycles.
Supply support for CY7C1650KV18-450BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing-critical applications.
This device belongs to Cypress's QDR® II SRAM product line, engineered specifically for high-throughput, low-latency buffering in packet-switched infrastructure where concurrent read/write and precise DDR timing are essential.
FAQ
What is the function of the DOFF pin on CY7C1650KV18-450BZC?
The DOFF (Double Output OFF) pin configures the device's read latency mode. When asserted high, it enables QDR II operation with 1.5-cycle read latency and full four-word burst capability. When tied low or to VSS, it reverts to QDR I–compatible mode with 1-cycle latency and reduced burst efficiency-allowing interoperability with legacy controllers designed for earlier QDR generations.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin connects to an external precision resistor (typically 100 Ω) to ground, enabling on-die calibration of output driver impedance for Q[17:0] and CQ/CQ signals. This tunes output strength to match PCB trace impedance, minimizing reflections and improving eye diagram margins-critical for reliable 666 MT/s operation without external termination resistors.
Can CY7C1650KV18-450BZC operate with only one clock (K) instead of K/K and C/C pairs?
Yes-the device supports single-clock mode where K serves as both input and output clock. In this mode, C and C are unused, and Q[17:0] outputs are driven on K/K edges. However, echo clock functionality (CQ/CQ) and optimal deskew capability are lost, reducing timing margin in high-speed multi-device systems where flight time mismatches exist.
What is the role of BWS0 and BWS1 in byte write operations?
BWS0 and BWS1 are active-low byte write select signals controlling D[8:0] and D[17:9], respectively. When asserted, they enable writing to their associated 9-bit subwords; when deasserted, those bits retain prior content. This eliminates need for read-modify-write cycles during partial updates-reducing latency and bus contention in real-time control applications.
CY7C1650KV18-450BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 144Mbit
- Memory Organization:
- 4M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1650KV18-450BZC FAQ
1.How can I place an order for CY7C1650KV18-450BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1650KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1650KV18-450BZC reliable?
The price and inventory of CY7C1650KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1650KV18-450BZC is usually 5 days.
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Once your CY7C1650KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1650KV18-450BZC?
For technical support, including CY7C1650KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1650KV18-450BZC requirements.
6.How does Aetrix verify that CY7C1650KV18-450BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1650KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1650KV18-450BZC meets industry standards.
7.What is the process for return or replacement of CY7C1650KV18-450BZC?
All CY7C1650KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1650KV18-450BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1650KV18-450BZC part is unused and in its original packaging.
Return procedure for CY7C1650KV18-450BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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