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Infineon Technologies CY7C1663KV18-450BZXC

Part No.:
CY7C1663KV18-450BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1663KV18-450BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,843

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Product details

Overview

CY7C1663KV18 from Cypress Semiconductor is a 144-Mbit QDR® II+ SRAM with 8 M × 18 organization, 550-MHz clock support, 2.5-cycle read latency, and separate read/write DDR ports. It delivers 1100-MHz data transfer rates on both ports, uses HSTL I/O with 1.8-V core/1.4–1.8-V I/O supply, and is packaged in a 165-ball FBGA (15 × 17 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and switch fabric controllers.

For engineers reviewing the CY7C1663KV18 datasheet, CY7C1663KV18 pinout, CY7C1663KV18 application, or CY7C1663KV18 equivalent, key selection criteria include its four-word burst architecture, echo clock (CQ/CQ) timing support, QVLD data validity signaling, DOFF-configurable PLL mode (QDR II+ vs QDR I), and depth expansion via RPS/WPS port selects.

Technical Context

The CY7C1663KV18 implements a true dual-port synchronous SRAM architecture with physically independent read and write data paths-no bus turnaround required. Its QDR II+ operation relies on two input clocks (K and K), both rising-edge-triggered, to latch address/data and drive outputs, enabling concurrent read/write transactions at full bandwidth.

It integrates an internal PLL for precise data placement and supports programmable output impedance via ZQ calibration. The device operates in two latency modes: 2.5-cycle read latency with DOFF = HIGH (QDR II+ mode), or 1-cycle latency with DOFF = LOW (QDR I mode, ≤167 MHz), confirmed by functional description and timing tables in Rev. *M datasheet.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8 M × 18 organization)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR data rate per port
Read Latency 2.5 clock cycles - deterministic timing for pipeline-aligned data capture
Core Supply VDD = 1.8 V ± 0.1 V - defines internal logic voltage and power integrity margin
I/O Supply Range VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5-V and 1.8-V system buses
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >500 MHz

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K/K; 18-bit parallel input path for burst writes
Q[17:0] Synchronous read data outputs DDR-driven on rising edges of K/K; tristated when RPS deasserted
RPS, WPS Port select controls (active-low) Enable independent read/write port activation; essential for depth expansion
BWS[1:0] Byte write select inputs Control write masking for D[8:0] (BWS0) and D[17:9] (BWS1); preserves unselected bytes
K, K Dual-phase input clocks Rising edges control all synchronous operations; no internal phase shift - external clock pair required
CQ, CQ Echo clock outputs Free-running, edge-aligned copies of K/K; simplify high-speed data capture in FPGA/ASIC receivers
QVLD Data validity indicator Asserted coincident with valid Q[17:0] data; synchronized to CQ/CQ edges for reliable sampling
DOFF PLL disable control Low = disables PLL, reverts to QDR I timing (1-cycle latency, ≤167 MHz); high = enables QDR II+ mode
ZQ Output impedance calibration input Connects to external resistor to ground to tune CQ/CQ/Q[17:0] drive strength to match PCB trace impedance

Key Features

Feature Design Value
Separate read/write DDR ports Eliminates bus turnaround overhead and prevents data contention in full-duplex systems
Four-word burst architecture Reduces effective address bus frequency by 4× versus single-word access - lowers routing complexity
Programmable output impedance (ZQ) Enables dynamic matching to 50-Ω or 60-Ω data buses without external termination resistors
QVLD + echo clocks (CQ/CQ) Provides deterministic, source-synchronous timing reference for reliable data capture at 1100 MT/s
DOFF-selectable latency mode Hardware-configurable transition between QDR II+ (2.5-cycle, 550 MHz) and QDR I (1-cycle, ≤167 MHz) operation

Applications

Network Packet Buffering Switch Fabric Controller Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, concurrent-access buffer between parser and scheduler ASICs.

Use Value: 2.5-cycle read latency and 1100-MT/s DDR throughput enable real-time header inspection and forwarding decision pipelines.

Use Scenario: Holding forwarding table entries and queue state in modular chassis-based switches.

IC Role / Device Role / Timing Role: High-bandwidth memory resource accessed simultaneously by multiple lookup engines and traffic managers.

Use Value: Independent RPS/WPS enables lock-free concurrent reads/writes across distributed control planes without arbitration delay.

Telecom Baseband Processing High-Speed Test Equipment Buffer

Use Scenario: Temporary storage of OFDM symbol buffers in 4G/5G baseband units before FFT/IFFT processing.

IC Role / Device Role / Timing Role: Burst-mode memory interfacing directly with DSP DMA controllers using HSTL signaling.

Use Value: Four-word burst reduces address strobe frequency, easing timing closure on dense FPGA-to-SRAM interconnects.

Use Scenario: Capturing high-speed serial data streams (e.g., JESD204B) for offline analysis in ATE platforms.

IC Role / Device Role / Timing Role: Synchronous acquisition buffer synchronized to system clock and echo clocks for jitter-insensitive capture.

Use Value: QVLD + CQ/CQ alignment guarantees sub-cycle data validity window - critical for <100 ps setup/hold margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PF 144-Mbit QDR II, 1000-MHz max data rate, 2-cycle latency, no DOFF mode switching Fixed QDR II timing; lacks QDR I fallback mode and ZQ calibration Select when strict 2-cycle latency and higher speed margin are required, and system clock stability supports fixed PLL operation
ISSI IS61WV102418B 18-Mbit asynchronous SRAM, 15 ns access, single-port, CMOS I/O, no DDR or burst No concurrent access, no echo clocks, no QVLD, significantly lower bandwidth Consider only for low-speed control-plane buffering where cost and simplicity outweigh performance needs

Compared with IDT72T3615L10PF and IS61WV102418B, the CY7C1663KV18 uniquely combines configurable latency (via DOFF), on-die impedance tuning (ZQ), and guaranteed 2.5-cycle read timing at 550 MHz - making it optimal for systems requiring both high throughput and flexible timing adaptation.

Availability

CY7C1663KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric controller memory, telecom baseband processing, and high-speed test equipment requiring stable component supply and long-term production continuity.

Supply support for CY7C1663KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The QDR® II+ SRAM product line targets high-speed networking infrastructure, delivering deterministic latency, concurrent dual-port access, and robust signal integrity for packet-forwarding and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1663KV18?

The DOFF (PLL Disable) pin is an active-low control that disables the internal PLL when pulled low. In this state, the device operates in QDR I mode with 1-cycle read latency and a maximum clock frequency of 167 MHz. When DOFF is high, the PLL is enabled and the device runs in QDR II+ mode at up to 550 MHz with 2.5-cycle latency. This hardware-selectable mode provides design flexibility for timing-critical or power-constrained use cases.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external precision resistor (typically 240 Ω) tied to ground, enabling automatic calibration of the output driver impedance for Q[17:0], CQ, and CQ signals. This calibration sets output impedance to 0.2 × RQ (e.g., ~48 Ω), matching common PCB trace impedances and minimizing reflections. Leaving ZQ unconnected or tying it to GND violates specifications and risks signal integrity degradation at 550 MHz.

Can CY7C1663KV18 perform simultaneous read and write to the same address?

Yes - the CY7C1663KV18 supports fully independent read and write operations to the same memory location due to its physically separate read/write data paths and pipelined architecture. However, the result depends on relative timing: if a write completes before the corresponding read burst begins, the read returns updated data; if not, it returns pre-write data. System-level arbitration must ensure coherency for critical shared-address usage.

What is the role of QVLD in system timing design?

QVLD is a synchronous output asserted edge-aligned with CQ and CQ, indicating that Q[17:0] data is valid and stable. Unlike simple clock-enable schemes, QVLD provides explicit, cycle-accurate validity signaling - eliminating need for fixed delay assumptions in FPGA/ASIC capture logic. This allows robust data sampling even under PVT variation, and is essential for achieving reliable 1100-MT/s operation without excessive timing margin.

CY7C1663KV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1663KV18-450BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1663KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1663KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1663KV18-450BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1663KV18-450BZXC?

For technical support, including CY7C1663KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1663KV18-450BZXC requirements.

6.How does Aetrix verify that CY7C1663KV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1663KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1663KV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1663KV18-450BZXC?

All CY7C1663KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1663KV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1663KV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C1663KV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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