Infineon Technologies CY7C1663KV18-550BZXC
- Part No.:
- CY7C1663KV18-550BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1663KV18-550BZXC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1663KV18 from Cypress Semiconductor is a 144-Mbit QDR® II+ SRAM with 8 M × 18 organization, 550-MHz clock support, 2.5-cycle read latency, and separate read/write DDR ports delivering 1100 MT/s data rate. It operates at 1.8-V core (VDD) and 1.4–1.8-V I/O (VDDQ), housed in a 165-ball FBGA (15 × 17 × 1.4 mm), and is used in high-bandwidth packet buffering for network line cards and switch fabric interfaces.
For engineers reviewing the CY7C1663KV18 datasheet, CY7C1663KV18 pinout, CY7C1663KV18 application, or CY7C1663KV18 equivalent, key selection criteria include its quad-data-rate burst architecture, echo-clock–assisted timing closure, JTAG 1149.1 testability, DOFF-configurable latency mode, and HSTL-compatible I/O drive strength.
Technical Context
The CY7C1663KV18 implements a synchronous pipelined QDR II+ architecture with physically independent read and write ports-each using DDR interfaces synchronized to complementary K/K clocks. Address inputs are multiplexed and latched on alternating rising edges of K/K, enabling concurrent read/write operations without bus turnaround.
It integrates an internal PLL for precise data placement, supports programmable output impedance via ZQ calibration, and uses echo clocks (CQ/CQ) aligned to output data for simplified high-speed capture. The DOFF pin selects between 2.5-cycle QDR II+ mode (DOFF = high) and 1-cycle QDR I mode (DOFF = low), altering both latency and maximum frequency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (8 M × 18 organization) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR throughput per port |
| Read Latency | 2.5 cycles (with DOFF = high) - deterministic timing for pipeline scheduling |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines logic threshold and power consumption baseline |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5-V and 1.8-V HSTL systems |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count memory routing |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >500 MHz |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edges of K/K; 18-bit parallel input path for burst writes |
| Q[17:0] | Synchronous read data output | DDR-aligned output driven on K/K rising edges; tristated when RPS inactive |
| RPS | Read port select (active low) | Enables read burst; sampled on K rising edge; controls Q[17:0] driver state |
| WPS | Write port select (active low) | Initiates write burst; sampled on K rising edge; gates D[17:0] acceptance |
| BWS[1:0] | Byte write select (active low) | BWS0 controls D[8:0], BWS1 controls D[17:9]; enables partial-word writes |
| K / K | Complementary input clocks | Rising edges control all synchronous inputs/outputs; no internal inversion required |
| CQ / CQ | Echo clocks | Free-running, edge-aligned copies of K/K; simplify source-synchronous data capture |
| QVLD | Valid data indicator | Asserted coincident with first valid Q[17:0] word; edge-aligned to CQ/CQ |
| DOFF | PLL disable (active low) | Switches device from QDR II+ (2.5-cycle latency, 550 MHz) to QDR I (1-cycle, ≤167 MHz) |
| ZQ | Output impedance calibration | Connects to external resistor to ground to tune CQ/Q[17:0] drive strength to system bus Z₀ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write DDR ports | Eliminates data bus turnaround, enabling true concurrent access and simplifying PCB layout |
| Four-word burst architecture | Reduces address bus toggling frequency by 4× versus single-word access, lowering EMI and routing complexity |
| Programmable output impedance (ZQ) | Enables dynamic matching to trace impedance without external termination resistors, improving signal fidelity |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system diagnostics without requiring additional test pads or probes |
| DOFF-configurable latency mode | Allows hardware-selectable operation as either QDR II+ (high bandwidth) or legacy QDR I (timing margin priority) |
Applications
| Network Packet Buffering | Switch Fabric Interface |
|---|---|
|
Use Scenario: High-throughput line cards in 10G/40G Ethernet switches require temporary storage of variable-length packets before classification and forwarding. IC Role / Device Role / Timing Role: Acts as dual-port buffer memory with zero contention between ingress (write) and egress (read) paths, synchronized to line-rate clocks. Use Value: 2.5-cycle latency and 1100 MT/s DDR throughput enable sub-100 ns round-trip access for real-time packet steering. |
Use Scenario: Crosspoint switch fabrics in telecom infrastructure demand simultaneous read/write access to shared memory for cell-based arbitration. IC Role / Device Role / Timing Role: Provides dedicated, non-blocking read and write ports clocked by independent K/K edges, supporting full-duplex fabric arbitration. Use Value: Four-word burst reduces address bus switching, minimizing skew across wide buses and easing timing closure at 550 MHz. |
| Baseband Processing Memory | Test Equipment Data Capture |
|
Use Scenario: LTE/5G baseband units require low-latency, high-bandwidth memory for FFT/IFFT result staging and channel estimation buffers. IC Role / Device Role / Timing Role: Serves as ping-pong buffer between DSP cores and RF front-end, leveraging echo clocks (CQ/CQ) for reliable data capture. Use Value: HSTL I/O and 1.4–1.8-V VDDQ compatibility allow direct interfacing with FPGA transceivers without level shifters. |
Use Scenario: High-speed digital pattern generators and logic analyzers need deterministic, jitter-tolerant memory for deep trace capture at multi-GHz sampling rates. IC Role / Device Role / Timing Role: Functions as acquisition FIFO with QVLD-stamped valid data windows, synchronized to system sample clock via PLL. Use Value: DOFF pin allows fallback to QDR I mode during debug or low-jitter validation, preserving pinout while relaxing timing constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120 | 144-Mbit QDR II+, 533 MHz max, 2.5-cycle latency, 165-ball FBGA, but requires 1.5-V only VDDQ | Lacks DOFF-configurable QDR I mode; no ZQ calibration; fixed 1.5-V I/O | Select when system uses strict 1.5-V HSTL and does not require impedance tuning or fallback latency modes |
| ISSI IS61WV102418B | 18-Mbit asynchronous SRAM, 15 ns access, ×18, SOJ-54; no DDR, no burst, no PLL, no echo clocks | Single-port, non-pipelined, no concurrency; suited for control-plane buffering, not data-plane throughput | Select only for cost-sensitive, low-bandwidth control memory where timing determinism is secondary to simplicity |
Compared with IDT72T36120, CY7C1663KV18 offers wider VDDQ flexibility and on-die impedance tuning; compared with IS61WV102418B, it delivers >30× higher effective bandwidth and deterministic latency essential for real-time data-path buffering.
Availability
CY7C1663KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric interface, baseband processing memory, and high-speed test equipment data capture requiring stable component supply and long-term industrial availability.
Supply support for CY7C1663KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
The QDR II+ SRAM product line targets high-speed data-path applications demanding deterministic latency, concurrent access, and robust DDR timing-especially in telecom infrastructure and test instrumentation.
FAQ
What is the function of the DOFF pin, and how does it affect timing?
The DOFF pin disables the internal PLL when asserted low, switching the device from QDR II+ mode (2.5-cycle latency, 550 MHz max) to QDR I mode (1-cycle latency, ≤167 MHz). In QDR I mode, timing parameters change significantly-setup/hold margins widen, but bandwidth drops by over 60%. This mode is intended for debug, timing margin validation, or legacy system compatibility-not production operation at rated speed.
How does the ZQ pin calibrate output impedance, and what external component is required?
The ZQ pin connects to a precision resistor (typically 100 Ω ±1%) tied to ground, enabling on-die calibration of CQ, CQ, and Q[17:0] output drivers to match system trace impedance. Calibration sets output impedance to 0.2 × RQ (e.g., 20 Ω for 100 Ω RQ). Direct connection to VDDQ enables minimum-impedance mode (≈15 Ω); floating or grounding ZQ is prohibited and may cause undefined behavior.
Can CY7C1663KV18 be used with a 1.5-V-only system, and what I/O voltage settings are supported?
Yes-CY7C1663KV18 supports VDDQ from 1.4 V to 1.8 V, making it compatible with both 1.5-V and 1.8-V HSTL systems. When VDDQ = 1.5 V, all HSTL Class I input thresholds and output drive levels remain compliant per JEDEC standards. No configuration register or strap is needed; voltage tolerance is inherent in the I/O cell design.
What is the role of CQ and CQ echo clocks, and how do they differ from K and K?
CQ and CQ are free-running, edge-aligned copies of K and K generated internally and output synchronously with Q[17:0]. Unlike K/K (which drive internal registers), CQ/CQ serve as source-synchronous strobes for capturing Q[17:0] at the receiver-reducing skew sensitivity and eliminating need for board-level delay tuning. Their phase relationship to Q[17:0] is guaranteed per AC specs (tQVQ, tQVQH).
CY7C1663KV18-550BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1663KV18-550BZXC FAQ
1.How can I place an order for CY7C1663KV18-550BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1663KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1663KV18-550BZXC reliable?
The price and inventory of CY7C1663KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1663KV18-550BZXC is usually 5 days.
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Once your CY7C1663KV18-550BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1663KV18-550BZXC?
For technical support, including CY7C1663KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1663KV18-550BZXC requirements.
6.How does Aetrix verify that CY7C1663KV18-550BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1663KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1663KV18-550BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1663KV18-550BZXC?
All CY7C1663KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1663KV18-550BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1663KV18-550BZXC part is unused and in its original packaging.
Return procedure for CY7C1663KV18-550BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1663KV18-550BZXC Tags

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