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Infineon Technologies CY7C185-15VIT

Part No.:
CY7C185-15VIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
AetrixCY7C185-15VIT.pdf
Description:
IC SRAM 64KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,693

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Product details

Overview

CY7C185-15VIT from Cypress Semiconductor is a 64-Kbit (8 K × 8) CMOS static RAM with 15 ns access time, 5 V ±10% supply, and automatic power-down reducing standby current to 15 mA. It features dual chip enables (CE1 active LOW, CE2 active HIGH), tri-state I/Os, TTL-compatible signaling, and is used in legacy industrial controllers requiring nonvolatile SRAM buffering with deterministic timing.

For engineers reviewing the CY7C185-15VIT datasheet, CY7C185-15VIT pinout, CY7C185-15VIT application, or CY7C185-15VIT equivalent, key selection criteria include tAA ≤15 ns read latency, ISB2 ≤15 mA standby current, CE1/CE2 enable logic compatibility, and 28-pin DIP/SOJ/SOIC package fit for through-hole or surface-mount PCB layouts.

Technical Context

The CY7C185-15VIT implements asynchronous parallel SRAM architecture with independent address decoding (A0–A12), bidirectional 8-bit data bus (I/O0–I/O7), and four control signals (CE1, CE2, OE, WE) enabling flexible memory expansion. Its dual CE scheme allows hierarchical chip selection in multi-bank systems without external logic.

Power management relies on automatic power-down triggered by CE1 HIGH or CE2 LOW, reducing ICC from 130 mA active to 15 mA standby (ISB2). All inputs and outputs meet TTL voltage thresholds (VIH ≥2.2 V, VIL ≤0.8 V), ensuring interoperability with legacy 5 V microcontroller buses.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size64 Kbit (8 K × 8) - supports byte-wide data transfers without bit-slicing logic
Access Time (tAA)15 ns max - guarantees data valid within 15 ns of stable address, critical for 65 MHz CPU bus timing
Supply Voltage5 V ±10% - compatible with standard TTL/CMOS 5 V rails; no LDO required
Active Current (ICC)130 mA max - defines worst-case power rail sizing and thermal budget in continuous read/write operation
Standby Current (ISB2)15 mA max - enables low-power sleep modes when deselected via CE1/CE2 control
Input Capacitance7 pF - limits trace length and fanout on address/control lines in high-density layouts
Output DriveIOL = 8 mA, IOH = –4 mA - sufficient to drive 10 TTL loads or 20 CMOS inputs directly

Pinout & Package

Package: 28-pin (300-mil) molded DIP - through-hole mountable, RoHS-compliant Pb-free variant per ordering code suffix 'VIT'.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address Inputs13-bit address bus selecting one of 8192 memory locations
I/O0–I/O7Bidirectional Data BusTri-state I/O pins shared for read data output and write data input
CE1Chip Enable 1Active LOW enable; deassertion forces automatic power-down and high-impedance I/O
CE2Chip Enable 2Active HIGH enable; complements CE1 for hierarchical memory banking
OEOutput EnableActive LOW control of data bus drivers; independent of WE state
WEWrite EnableActive LOW signal initiating write cycle; must overlap with CE1 LOW and CE2 HIGH
VCCPower Supply+5 V supply pin; decoupling capacitor placement critical for noise immunity
GNDGround ReferenceSignal and power ground return; requires low-inductance connection to plane

Key Features

FeatureDesign Value
Dual Chip Enable LogicCE1 (active LOW) + CE2 (active HIGH) enables seamless expansion across multiple 8-Kbyte banks without glue logic
Automatic Power-DownReduces standby current to 15 mA when CE1 HIGH or CE2 LOW - eliminates need for external power gating
TTL-Compatible I/OVIH ≥2.2 V, VIL ≤0.8 V ensures direct interface with 5 V microcontrollers and FPGAs without level shifters
Fast Output EnabletDOE ≤8 ns - minimizes read latency in burst-access applications like display frame buffers
Alpha Particle ImmunityDie coat protection mitigates soft errors in industrial environments with elevated radiation exposure

Applications

Industrial PLC Memory BufferLegacy Medical Device Data Cache

Use Scenario: Real-time I/O status storage in programmable logic controllers with 8051-based main CPU.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing zero-wait-state data buffering between CPU and fieldbus interface ASIC.

Use Value: 15 ns tAA ensures full-speed operation at 65 MHz bus clock; dual CE allows bank-switching for firmware/data partitioning.

Use Scenario: Temporary waveform storage in electrocardiogram (ECG) analyzers with analog front-end digitization.

IC Role / Device Role / Timing Role: High-reliability SRAM holding raw ADC samples prior to DSP processing and flash storage.

Use Value: Alpha-immune die coat prevents data corruption during long-term clinical deployment; 15 mA ISB2 extends battery runtime in portable units.

Avionics Sensor Interface ModuleTest Equipment Pattern Memory

Use Scenario: Sensor fusion preprocessing unit in flight control computers operating across –40 °C to +85 °C.

IC Role / Device Role / Timing Role: Temperature-stable SRAM storing calibrated sensor coefficients and real-time correction tables.

Use Value: Guaranteed operation over industrial temperature range; 7 pF input capacitance simplifies routing on multi-layer avionics PCBs.

Use Scenario: Digital pattern generator in automated test equipment requiring deterministic read/write timing.

IC Role / Device Role / Timing Role: Fixed-latency memory delivering stimulus vectors to DUT with sub-ns jitter tolerance.

Use Value: tLZOE ≤3 ns and tHZOE ≤7 ns ensure precise output enable timing control; 130 mA ICC supports high-throughput vector streaming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS6C8008-15TINSame 8 K × 8 organization, 15 ns access, but uses single active-LOW CE and lacks CE2; 3.3 V onlyRequires level-shifting for 5 V systems; no hierarchical enable for multi-bank designsSelect only if migrating to 3.3 V platform and simplifying control logic
IS61LV25616AL-15TQLI16-bit bus (256 K × 16), 3.3 V core, 15 ns access; no 5 V tolerance or alpha immunityHigher density but incompatible voltage and radiation hardening requirementsUse only in new 3.3 V designs where byte-width interface and radiation tolerance are not required

Compared with AS6C8008-15TIN and IS61LV25616AL-15TQLI, the CY7C185-15VIT uniquely supports 5 V operation, dual CE expansion, and alpha immunity-making it irreplaceable in legacy industrial and avionics systems requiring drop-in compatibility and reliability under harsh conditions.

Availability

CY7C185-15VIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy medical device data caches, and avionics sensor interface modules requiring stable component supply and long-lifecycle support.

Supply support for CY7C185-15VIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.

The CY7C185 belongs to Cypress's legacy parallel SRAM product line, engineered for deterministic timing, 5 V compatibility, and robust operation in mission-critical embedded systems.

FAQ

Is CY7C185-15VIT compatible with 3.3 V systems?

No. The CY7C185-15VIT is specified only for 5 V ±10% operation (4.5 V to 5.5 V). Its input thresholds (VIH ≥2.2 V, VIL ≤0.8 V) and output drive strength assume 5 V rails. Interfacing with 3.3 V logic requires level-shifting circuitry to prevent damage or undefined behavior.

What is the function of CE2 being active HIGH?

CE2's active-HIGH logic enables complementary chip selection with CE1 (active LOW), allowing hierarchical memory mapping. For example, CE1 can select a memory bank while CE2 selects a sub-bank within it-eliminating external AND gates in multi-SRAM systems and simplifying address decoding.

Does CY7C185-15VIT support battery backup operation?

No. The CY7C185-15VIT lacks built-in battery-switchover circuitry or NVSRAM functionality. It is a volatile SRAM requiring continuous VCC to retain data. External battery-backed power supplies or external nonvolatile storage must be implemented for data retention during power loss.

Can I use OE and WE simultaneously active for read-modify-write cycles?

No. OE and WE serve mutually exclusive functions: OE controls output drivers (read), WE controls write latching. Asserting both simultaneously violates the truth table and may cause bus contention or undefined data states. Read-modify-write must be sequenced as read → process → write with proper timing margins per tRC and tWC.

CY7C185-15VIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

CY7C185-15VIT FAQ

1.How can I place an order for CY7C185-15VIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C185-15VIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C185-15VIT reliable?

The price and inventory of CY7C185-15VIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C185-15VIT is usually 5 days.

3.What payment methods are accepted for CY7C185-15VIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C185-15VIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C185-15VIT?

CY7C185-15VIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C185-15VIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C185-15VIT?

For technical support, including CY7C185-15VIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C185-15VIT requirements.

6.How does Aetrix verify that CY7C185-15VIT is sourced from the original manufacturer or authorized distributors?

All CY7C185-15VIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C185-15VIT meets industry standards.

7.What is the process for return or replacement of CY7C185-15VIT?

All CY7C185-15VIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C185-15VIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C185-15VIT part is unused and in its original packaging.

Return procedure for CY7C185-15VIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C185-15VIT Tags

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