Infineon Technologies CY7C1911KV18-250BZCT

Overview

CY7C1911KV18-250BZCT from Cypress Semiconductor is a 2-Mbit × 9 (18-Mbit total) QDR® II SRAM with separate read/write ports, 250 MHz clock operation (500 MT/s DDR), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions with four-word burst and echo clocks (CQ/CQ) for high-speed data capture in network packet buffers and baseband processing.

For engineers reviewing the CY7C1911KV18-250BZCT datasheet, CY7C1911KV18-250BZCT pinout, CY7C1911KV18-250BZCT application, or CY7C1911KV18-250BZCT equivalent, key selection factors include its 2M × 9 organization, DOFF-controlled 1-cycle vs. 1.5-cycle read latency, HSTL-compatible output drive, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing constraints.

Technical Context

This QDR II SRAM implements dual independent synchronous ports: write port latches D[8:0] on rising K/K edges, while read port drives Q[8:0] on rising C/C edges - enabling true concurrent access without bus turnaround. Its internal 4-array architecture (each 512K × 9) supports depth expansion via RPS/WPS controls and byte-level write masking via BWS0.

The device uses an on-chip PLL for precise data placement and includes JTAG 1149.1 test access, programmable impedance (ZQ), and VREF-referenced HSTL I/O. Echo clocks CQ/CQ are phase-aligned to output data edges, reducing timing margin burden in 500 MT/s systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10PA and IS61QW25618A-250BQI, CY7C1911KV18-250BZCT uniquely combines 500 MT/s throughput, 1.8 V/1.5 V flexible I/O, echo clocks for simplified capture, and ZQ calibration - making it optimal for new 10G+ networking and 5G PHY designs requiring production robustness.

Availability

CY7C1911KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, telecom line card memory, and high-speed test equipment requiring stable component supply across multi-year production cycles.

Supply support for CY7C1911KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1911KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for high-throughput, low-latency packet and signal processing applications in networking and wireless infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1911KV18-250BZCT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for improved timing margin in high-frequency systems; when LOW, it enables 1-cycle latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and first valid Q[8:0] output, and must be fixed at power-up based on system timing budget.

Can CY7C1911KV18-250BZCT operate with only one clock domain (K = C)?

Yes - the device supports single-clock-domain operation where K and C are tied together. In this mode, all synchronous inputs (address, data, controls) are registered on K, and all outputs (Q[8:0]) are registered on the same K edge. However, echo clocks (CQ/CQ) remain functional and phase-aligned to Q[8:0], preserving their utility for source-synchronous capture even without separate C/C inputs.

How does the BWS0 pin function in ×9 configuration?

In CY7C1911KV18-250BZCT's 2M × 9 organization, BWS0 serves as the sole byte write select and is active LOW to enable writing all 9 bits of D[8:0]. Unlike ×8 or ×18 variants, there is no nibble- or multi-byte granularity - BWS0 asserts the entire 9-bit word. When deasserted, the corresponding write operation is ignored, preserving memory contents.

Is ZQ calibration required for reliable operation?

Yes - ZQ calibration is mandatory for production use. The device uses the ZQ pin to tune output driver impedance against an external 240 Ω resistor to ground. Skipping calibration results in uncontrolled output impedance (typically 45–60 Ω), causing signal reflections, timing violations, and bit errors at 500 MT/s. Calibration occurs automatically at power-up and can be retriggered via JTAG.