Infineon Technologies CY7C1911KV18-250BZXC
- Part No.:
- CY7C1911KV18-250BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1911KV18-250BZXC.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1911KV18-250BZXC from Cypress Semiconductor is a 2-Mbit × 9 (18-Mbit total) QDR® II SRAM with separate read/write ports, 250 MHz clock operation (500 MT/s DDR), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions with four-word burst and echo clocks (CQ/CQ) for high-speed data capture in network packet buffers and FPGA co-processor memory.
For engineers reviewing the CY7C1911KV18-250BZXC datasheet, CY7C1911KV18-250BZXC pinout, CY7C1911KV18-250BZXC application, or CY7C1911KV18-250BZXC equivalent, key selection criteria include its 2M × 9 organization, DOFF-controlled 1-cycle vs. 1.5-cycle read latency, HSTL-compatible output drive, JTAG 1149.1 test access, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing.
Technical Context
The device implements true dual-port QDR II architecture: independent K/K input clocks control address/data latching on rising edges only, while C/C output clocks-synchronized to internal timing-drive registered outputs with minimized skew. Echo clocks CQ/CQ provide source-synchronous timing for reliable 500 MT/s data capture at system level.
It supports synchronous self-timed writes, full data coherency, and depth expansion via RPS/WPS port selects. The DOFF pin configures read latency (1 cycle when LOW, 1.5 cycles when HIGH), enabling optimization for latency-sensitive or bandwidth-optimized systems without changing clocking scheme.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2 M × 9 (18-Mbit total); enables 9-bit aligned data paths for parity-aware networking and telecom interfaces |
| Maximum Clock Frequency | 250 MHz (K/K and C/C); supports 500 MT/s effective throughput per port with DDR interface |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); directly impacts pipeline depth in FPGA-based datapaths |
| Supply Voltages | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; allows interoperability with both 1.5 V and 1.8 V HSTL systems |
| Burst Length | Four-word burst; reduces address bus toggling frequency by 4× versus single-word access, easing timing closure |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, with 0.8 mm ball pitch for fine-pitch PCB routing |
| JTAG Support | IEEE 1149.1 compliant TAP; enables boundary scan testing and in-system programming without external debug hardware |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data inputs | 9-bit parallel data sampled on rising edge of K clock; supports byte-aligned writes via BWS0 |
| Q[8:0] | Synchronous read data outputs | 9-bit registered outputs driven on rising edge of C clock; echo clock CQ aligns with Q[8:0] valid window |
| WPS | Write port select (active LOW) | Enables write transaction; deassertion blocks D[8:0] latching and prevents unintended memory updates |
| RPS | Read port select (active LOW) | Enables read transaction; deassertion forces Q[8:0] to high-impedance, allowing bus sharing |
| BWS0 | Byte write select (active LOW) | Controls write enable for all 9 bits; required for full-word writes in 2M × 9 configuration |
| K / K | Input clocks (differential pair) | Rising-edge-triggered clocks for address and write data capture; K and K must be phase-aligned |
| C / C | Output clocks (differential pair) | Rising-edge-triggered clocks for read data output registration; C and C drive Q[8:0] and CQ/CQ |
| CQ / CQ | Echo clocks (differential pair) | Source-synchronous copies of C/C; simplify high-speed receiver timing margin analysis and PCB layout |
| DOFF | Read latency mode control | HIGH → 1.5-cycle latency (QDR II mode); LOW → 1-cycle latency (QDR I compatibility mode) |
| VREF | Reference voltage input | Provides mid-supply reference for HSTL input receivers; must be externally decoupled to VDDQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay; enables simultaneous 500 MT/s read and write on same clock cycle |
| Four-word burst architecture | Reduces address bus switching rate by 75%, lowering EMI and simplifying address trace routing |
| Configurable read latency (DOFF) | Allows runtime selection between low-latency (1-cycle) and high-throughput (1.5-cycle) modes without firmware change |
| HSTL Class I compatible I/O | Supports 1.5 V or 1.8 V VDDQ; matches FPGA/HBAs with HSTL-18 or HSTL-15 I/O banks |
| Integrated PLL | Ensures precise data-to-clock alignment across temperature/voltage; eliminates need for external clock conditioning |
| JTAG 1149.1 test access port | Enables production-level boundary scan testing and in-circuit verification without custom test fixtures |
Applications
| Network Packet Buffer | FPGA Co-Processor Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10/25/40 GbE line cards with real-time classification. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state buffer between MAC and traffic manager; reads and writes occur concurrently on same clock edge. Use Value: 2M × 9 organization matches 9-bit queue ID + 8-bit priority fields; echo clocks ensure deterministic 500 MT/s capture under jitter-prone SerDes links. |
Use Scenario: High-bandwidth scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based acceleration engines. IC Role / Device Role / Timing Role: Off-chip memory extension with pipelined read/write ports synchronized to FPGA's HSTL I/O banks. Use Value: DOFF pin allows FPGA firmware to switch between low-latency (1-cycle) mode for control loops and high-throughput (1.5-cycle) mode for bulk data movement. |
| Telecom Baseband Processing | High-Speed Test Equipment |
|
Use Scenario: Real-time channel estimation and precoding coefficient storage in massive MIMO radio units. IC Role / Device Role / Timing Role: Shared memory between DSP cores and RF front-end controllers; RPS/WPS enables independent port arbitration. Use Value: Full data coherency guarantees latest coefficients are always read; 1.8 V core minimizes power in thermally constrained RU enclosures. |
Use Scenario: Pattern memory in automated test equipment (ATE) for high-pin-count SoC validation. IC Role / Device Role / Timing Role: Deterministic waveform storage with sub-nanosecond timing repeatability across temperature range. Use Value: PLL-stabilized C/C clocks and echo clocks eliminate setup/hold violations at 500 MT/s; JTAG enables in-system memory content verification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 100 MHz max clock (200 MT/s), ×36 organization, 2.5 V core; no DOFF latency control | Lower bandwidth; suited for legacy telecom backplanes where 200 MT/s suffices and 2.5 V rails exist | Select when cost sensitivity outweighs bandwidth needs and system uses 2.5 V supply infrastructure |
| ISSI IS61WV102418BLL-15BLI | 15 ns async access, ×18 organization, 3.3 V core; no DDR, no echo clocks, no JTAG | Asynchronous interface; used in simpler control-plane buffers where deterministic latency > peak bandwidth | Select only for non-critical buffering where timing margin is generous and testability is not required |
Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C1911KV18-250BZXC provides 2.5× higher throughput, configurable latency, source-synchronous timing, and production-test-ready JTAG-making it optimal for next-generation high-speed digital systems requiring guaranteed coherency and timing precision.
Availability
CY7C1911KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor memory, telecom baseband processing requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for CY7C1911KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.
CY7C1911KV18 belongs to the QDR® II SRAM product line, engineered specifically for ultra-low-latency, concurrent-access memory subsystems in networking, wireless infrastructure, and high-end test equipment.
FAQ
What is the function of the DOFF pin on CY7C1911KV18-250BZXC?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency (standard QDR II operation); when LOW, it reduces latency to 1 cycle (QDR I compatibility mode). This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed. No external timing adjustment is needed-the internal PLL automatically adapts clock-to-data alignment.
Can CY7C1911KV18-250BZXC operate with a 1.5 V VDDQ supply?
Yes-CY7C1911KV18-250BZXC supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal. Its HSTL Class I output drivers are fully characterized at 1.5 V, and input receivers meet HSTL-15 thresholds when VREF is set to 0.75 V. System-level timing margins remain valid per AC specifications in the datasheet at this voltage.
How does depth expansion work with RPS and WPS pins?
RPS (Read Port Select) and WPS (Write Port Select) are active-LOW signals that enable independent read/write port activation across multiple devices. When cascading CY7C1911KV18-250BZXC chips for wider memory, each device's RPS/WPS is driven by decoded address bits-ensuring only one device drives Q[8:0] or accepts D[8:0] per transaction. No external logic is needed beyond standard address decoding.
Is the 165-ball FBGA package of CY7C1911KV18-250BZXC compatible with standard reflow profiles?
Yes-the 165-ball FBGA (package code BZXC) is qualified for lead-free reflow per IPC/JEDEC J-STD-020D. Peak temperature is 260 °C, with time above liquidus (TAL) of 60–150 seconds. Board design must follow Cypress's recommended pad layout (0.35 mm stencil aperture, 0.127 mm thickness) and thermal relief for VSS/VDDQ balls to prevent voiding and solder joint reliability issues.
CY7C1911KV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 2M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1911KV18-250BZXC FAQ
1.How can I place an order for CY7C1911KV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1911KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1911KV18-250BZXC reliable?
The price and inventory of CY7C1911KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1911KV18-250BZXC is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1911KV18-250BZXC transactions.
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CY7C1911KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1911KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1911KV18-250BZXC?
For technical support, including CY7C1911KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1911KV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1911KV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1911KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1911KV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1911KV18-250BZXC?
All CY7C1911KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1911KV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1911KV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1911KV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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