Infineon Technologies CY7C1911KV18-300BZCT

Overview

CY7C1911KV18-300BZCT from Cypress Semiconductor is a 2-Mbit × 9 (18-Mbit total) QDR® II SRAM with separate read/write ports, 300 MHz clock operation, DDR interfaces delivering 600 Mbps per data pin, and 1.8 V core / 1.4–1.8 V I/O supply. It supports concurrent read-write transactions in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1911KV18-300BZCT datasheet, CY7C1911KV18-300BZCT pinout, CY7C1911KV18-300BZCT application, or CY7C1911KV18-300BZCT equivalent, key selection criteria include burst depth (four-word), DOFF-controlled read latency (1 or 1.5 cycles), echo clock (CQ) timing support, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements dual independent synchronous ports: read port driven by C/C clocks with echo clock CQ for source-synchronous capture, and write port synchronized to K/K clocks. Address latching occurs on alternating rising edges of K, enabling full utilization of the multiplexed address bus across both ports.

The device uses on-chip PLL for precise data placement, supports programmable impedance via ZQ pin, and includes JTAG 1149.1 boundary scan. Byte write select (BWS0) enables selective 9-bit word updates without read-modify-write, and DOFF pin configures read latency between 1-cycle (QDR I mode) and 1.5-cycle (QDR II mode).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant. Thermal pad exposed on underside for enhanced heat dissipation in high-throughput operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L5PF and IS61QW25618A-300BQ, CY7C1911KV18-300BZCT provides unique advantages in timing robustness (CQ echo clocks), design flexibility (DOFF-selectable latency), and signal integrity (ZQ-calibrated outputs), making it optimal for new high-speed networking and test equipment designs where timing margin is constrained.

Availability

CY7C1911KV18-300BZCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and ATE pattern storage requiring stable component supply across multi-year production cycles.

Supply support for CY7C1911KV18-300BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

CY7C1911KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory subsystems in networking, wireless infrastructure, and test equipment where concurrent read/write throughput is critical.

FAQ

What is the function of the DOFF pin on CY7C1911KV18-300BZCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables QDR II mode with 1.5-cycle latency for optimized bandwidth; when LOW, it selects QDR I compatibility mode with 1-cycle latency. This allows hardware-level switching between performance and legacy timing behavior without firmware changes.

How does the CQ echo clock improve timing margin in high-speed designs?

CQ and CQ are source-synchronous clocks driven with Q[8:0] outputs, matching data flight time and skew. This eliminates the need for precise board-level clock-to-data trace length matching, enabling reliable capture at 600 Mbps on standard FR4 PCBs using FPGA IDELAY/ODELAY primitives without custom timing closure effort.

Can CY7C1911KV18-300BZCT operate with 1.5 V I/O supply?

Yes - VDDQ supports 1.4 V to 1.8 V, including 1.5 V. The device maintains full AC/DC specifications across this range, allowing direct interface with 1.5 V FPGA I/O banks while retaining 1.8 V core for speed/power optimization. VREF must be set to VDDQ/2 accordingly.

Is the 165-ball FBGA package compatible with standard reflow profiles?

Yes - the CY7C1911KV18-300BZCT 165-ball FBGA adheres to IPC/JEDEC J-STD-020D moisture sensitivity level 3 and qualifies for standard lead-free reflow profiles (peak 260°C). Its 0.8 mm pitch and thermal pad require controlled solder paste volume and preheat ramp rates to ensure void-free solder joints under thermal cycling.