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Infineon Technologies CY7C1911KV18-333BZC

Part No.:
CY7C1911KV18-333BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1911KV18-333BZC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,002

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Product details

Overview

CY7C1911KV18-333BZC from Cypress Semiconductor is a 2-Mbit × 9 (18-Mbit total) QDR® II SRAM with separate read/write ports, 333 MHz clock operation, DDR interfaces delivering 666 MT/s data rate, and 1.8 V core / 1.4–1.8 V I/O supply. It supports concurrent read/write transactions in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1911KV18-333BZC datasheet, CY7C1911KV18-333BZC pinout, CY7C1911KV18-333BZC application, or CY7C1911KV18-333BZC equivalent, key selection factors include its 2M × 9 organization, echo-clock–assisted timing, DOFF-configurable 1-cycle/1.5-cycle read latency, and 165-ball FBGA package compatibility with high-speed SerDes subsystems.

Technical Context

The CY7C1911KV18 implements QDR II architecture with fully independent synchronous read and write ports sharing a multiplexed 19-bit address bus. Address latching occurs on alternate rising edges of the K clock, enabling four-word burst transfers per access.

It uses dual input clocks (K/K for control, C/C for output timing) and echo clocks (CQ/CQ) to align data capture at the receiver. The device integrates a PLL for precise data placement and supports JTAG 1149.1 boundary scan for system-level testability.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (2 M × 9 organization)
Max Clock Frequency333 MHz - enables 666 MT/s DDR throughput on both ports
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Supply VoltagesVDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage I/O interfacing
Burst LengthFour-word burst - reduces effective address bus toggling frequency by 4×
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density PCB routing
Standby CurrentNot specified in provided documentation; typical QDR II standby < 50 mA at 1.8 V

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 1.0 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Write Data Inputs9-bit synchronous data bus sampled on rising edge of K clock during active write
Q[8:0]Read Data Outputs9-bit DDR outputs driven on rising edges of C/C clocks; aligned with CQ/CQ echo clocks
WPSWrite Port SelectActive-low signal enabling write operations; deassertion blocks D[8:0] acceptance
BWS0Byte Write SelectActive-low control for entire 9-bit word; assertion enables full write to addressed location
A[18:0]Address Inputs19-bit multiplexed address bus latched on K rising edge for both read and write ports
DOFFRead Latency ControlHigh = 1.5-cycle latency; Low = 1-cycle latency - configures internal pipeline depth
CQ, CQEcho Clock OutputsSource-synchronous clocks paired with Q[8:0] outputs to simplify high-speed data capture
K, KInput ClocksDifferential clock inputs for command/address/data setup; only rising edges used for synchronization
C, COutput ClocksDifferential clocks driving Q[8:0] registers; minimize skew between data and strobe
VREFReference VoltageProvides mid-supply reference for HSTL-compatible input receivers (e.g., WPS, BWS0, DOFF)
ZQImpedance CalibrationConnects to external 240 Ω resistor for programmable output driver impedance tuning

Key Features

FeatureDesign Value
Separate Read/Write PortsEnables true concurrent access without bus turnaround delay - critical for full-duplex packet buffering
Four-Word Burst ArchitectureReduces required address transition rate by 75%, easing timing closure on wide buses
Echo Clock Support (CQ/CQ)Eliminates board-level trace length matching requirements between data and clock paths
Programmable Output DriveHSTL-compliant variable drive strength calibrated via ZQ pin - improves signal integrity across load variations
JTAG 1149.1 Boundary ScanEnables in-system interconnect testing without physical probe access - essential for high-density routing

Applications

Network Packet BufferingSwitch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer memory with simultaneous read (forwarding engine) and write (ingress parser) access.

Use Value: 333 MHz clock + DDR interface delivers 1.2 GB/s aggregate bandwidth - sufficient for 10 GbE full-duplex traffic.

Use Scenario: Interfacing with multi-gigabit SerDes lanes in modular router backplanes requiring low-latency memory access.

IC Role / Device Role / Timing Role: High-speed scratchpad for cell/packet reordering logic with deterministic 1-cycle read latency (DOFF = LOW).

Use Value: Echo clocks (CQ/CQ) enable reliable data capture at 666 MT/s without custom PCB length tuning.

Telecom Line Card MemoryTest Equipment Pattern Memory

Use Scenario: Holding protocol-specific frame templates and statistics counters in CPRI/eCPRI fronthaul units.

IC Role / Device Role / Timing Role: Synchronous pipelined memory supporting parallel access from multiple DSP cores via dedicated ports.

Use Value: 2M × 9 organization matches common 9-bit parity+data bus widths in telecom PHY layers.

Use Scenario: Storing stimulus/response vectors in high-speed ATE systems performing 100+ MHz digital pattern generation.

IC Role / Device Role / Timing Role: Deterministic-latency memory for real-time vector playback with sub-nanosecond timing alignment.

Use Value: Programmable impedance (ZQ calibration) maintains signal fidelity across varying PCB trace impedances and temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit × 512K, 10 ns access, LVDS I/O, no echo clocksHigher density but lower speed (≤250 MHz), requires external clock forwardingSelect when wider data path needed and echo clock simplification is not required
ISSI IS61WV102418BLL-15BLI1M × 18, 15 ns async SRAM, single-port, 3.3 V coreNo DDR, no burst, no concurrent access - incompatible architectureNot functionally equivalent; only suitable for non-critical, low-speed buffering where QDR features are unused

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C1911KV18-333BZC uniquely delivers 333 MHz DDR concurrency with echo-clock timing support - making it irreplaceable for 10 GbE switch fabric and SerDes-adjacent memory where deterministic latency and source-synchronous capture are mandatory.

Availability

CY7C1911KV18-333BZC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom line card memory, and test equipment pattern memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C1911KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems.

The QDR® II SRAM product line targets high-speed packet processing infrastructure, emphasizing concurrent access, low-latency timing, and robust signal integrity for 10 GbE+ applications.

FAQ

What is the function of the DOFF pin on CY7C1911KV18-333BZC?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-frequency systems; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly controls internal register staging in the read data path and is sampled synchronously on the K clock.

Does CY7C1911KV18-333BZC support byte-level write masking?

No - CY7C1911KV18-333BZC provides only one Byte Write Select (BWS0) controlling the full 9-bit word. Unlike ×18 or ×36 variants that support multiple BWS signals, the ×9 configuration uses BWS0 to enable or disable writes to the entire D[8:0] bus; partial-word writes are not supported.

How does the ZQ pin function in impedance calibration?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of output driver impedance. During calibration, the device measures the reference resistance and adjusts internal termination to match target HSTL-18 levels (typically 25–35 Ω), ensuring consistent signal integrity across voltage and temperature variations.

Can CY7C1911KV18-333BZC operate with a single-ended clock input?

No - the device requires differential K/K and C/C clock inputs. Internal circuitry relies on the differential pair for noise immunity and precise edge detection; applying single-ended signals violates AC timing specifications and may cause metastability or functional failure. External termination (e.g., 100 Ω across K/K) is mandatory.

CY7C1911KV18-333BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
2M x 9
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1911KV18-333BZC FAQ

1.How can I place an order for CY7C1911KV18-333BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1911KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1911KV18-333BZC reliable?

The price and inventory of CY7C1911KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1911KV18-333BZC is usually 5 days.

3.What payment methods are accepted for CY7C1911KV18-333BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1911KV18-333BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1911KV18-333BZC?

CY7C1911KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1911KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1911KV18-333BZC?

For technical support, including CY7C1911KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1911KV18-333BZC requirements.

6.How does Aetrix verify that CY7C1911KV18-333BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1911KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1911KV18-333BZC meets industry standards.

7.What is the process for return or replacement of CY7C1911KV18-333BZC?

All CY7C1911KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1911KV18-333BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1911KV18-333BZC part is unused and in its original packaging.

Return procedure for CY7C1911KV18-333BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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