Infineon Technologies CY7C199C-20ZXIT

Overview

CY7C199C-20ZXIT from Cypress Semiconductor is a 256K-bit (32K × 8) asynchronous CMOS static RAM with 12 ns access time, 5.0V ±10% supply operation, and automatic CE-controlled power-down. It delivers TTL-compatible I/O, 2.0V data retention, and low standby current (10 µA in CMOS mode), deployed in embedded controllers and industrial microprocessor systems requiring fast, nonvolatile-critical memory buffering.

For engineers reviewing the CY7C199C-20ZXIT datasheet, CY7C199C-20ZXIT pinout, CY7C199C-20ZXIT application, or CY7C199C-20ZXIT equivalent, key selection criteria include access time vs. operating current trade-offs, CE/WE/OE timing coordination for bus arbitration, VCC tolerance across temperature grades, and package-specific thermal resistance in high-density PCB layouts.

Technical Context

The CY7C199C-20ZXIT implements a fully asynchronous SRAM architecture with independent address decoding, sense amplifier array, and tri-state I/O buffers controlled by CE, OE, and WE. Its read/write cycle timing is governed by overlapping CE and WE assertions, with tRC = 12 ns and tWC = 12 ns at VCC = 5.0V and TA = 25°C.

Power management relies on dual-mode automatic power-down: ISB1 = 30 µA under TTL input conditions when CE ≥ VIH, and ISB2 = 10 µA under CMOS input conditions when CE ≥ VCC – 0.3V. Data retention operates down to VCC = 2.0V with ICCDR ≤ 150 µA.

Key Specifications

Pinout & Package

Package: 28-pin TSOP I (8 mm × 13.4 mm), RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with AS6C4008-12TIN and IS61LV25616AL-10TLI, the CY7C199C-20ZXIT uniquely balances 5V legacy compatibility, ultra-low 10 µA standby, and 2.0V data retention-making it irreplaceable in battery-backed industrial upgrades where voltage margin and thermal range are constrained.

Availability

CY7C199C-20ZXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical data loggers, legacy microprocessor system upgrades, and automotive body control modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C199C-20ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer applications.

The CY7C199C belongs to Cypress's legacy asynchronous SRAM portfolio, designed specifically for drop-in replacement of obsolete NMOS and early CMOS memories in 5V systems requiring reliability, low power, and broad temperature operation.

FAQ

What is the minimum VCC required to retain data in CY7C199C-20ZXIT?

The device guarantees data retention down to VCC = 2.0V, with ICCDR ≤ 150 µA under CMOS input conditions (CE ≥ VCC – 0.3V, VIN ≥ VCC – 0.3V or VIN ≤ 0.3V). This specification is validated per the "Data Retention Characteristics" table on page 6 of Rev. *C datasheet, and applies across the full industrial temperature range.

Does CY7C199C-20ZXIT support true 5V-tolerant I/O when interfaced with 3.3V controllers?

No. The CY7C199C-20ZXIT requires VCC = 4.5V–5.5V and features TTL-compatible inputs (VIH = 2.2V min), but its outputs swing rail-to-rail to VCC. Direct connection to 3.3V logic without level translation risks overvoltage damage to downstream receivers and violates absolute maximum ratings for VIN.

How does automatic power-down behave when CE is held HIGH but OE and WE are toggled?

When CE = VIH (≥ VCC – 0.3V), the device enters ISB2 mode (10 µA) regardless of OE or WE state. Toggling OE or WE has no effect-outputs remain high-impedance, internal arrays are deselected, and no read/write cycles occur. Power-down is solely CE-gated; OE and WE are ignored in this state.

Is the TSOP I package of CY7C199C-20ZXIT compatible with standard SOJ or DIP footprints?

No. The CY7C199C-20ZXIT in TSOP I (8 mm × 13.4 mm, 28-pin) has distinct pad layout, pitch (0.55 mm), and mechanical dimensions versus 28-pin SOJ (300-mil, 1.27 mm pitch) or DIP (600-mil, through-hole). PCB land patterns are not interchangeable; separate footprint design is mandatory for each package variant.