Infineon Technologies CY7C199CN-12VXIT

Overview

CY7C199CN-12VXIT from Cypress Semiconductor is a 256K-bit (32K × 8) asynchronous CMOS static RAM with 12 ns access time, 5.0V ±10% supply range, TTL-compatible I/Os, and automatic CE-controlled power-down mode. It operates across commercial temperature range (0°C to +70°C) and retains data at 2.0V, serving as a drop-in memory buffer in microcontroller-based instrumentation and legacy industrial controllers.

For engineers reviewing the CY7C199CN-12VXIT datasheet, CY7C199CN-12VXIT pinout, CY7C199CN-12VXIT application, or CY7C199CN-12VXIT equivalent, key selection criteria include access time vs. standby current trade-off, TSOP I package compatibility with space-constrained PCB layouts, CE/OE/WE control timing margins, and 2.0V data retention for low-power hold modes.

Technical Context

The CY7C199CN-12VXIT implements a full asynchronous SRAM interface with independent chip enable (CE), output enable (OE), and write enable (WE) controls. Its internal architecture includes row/column decoders, sense amplifiers, and an automated power-down circuit triggered by CE high, reducing ICC to ≤10 µA in CMOS-input mode.

It supports two distinct read cycles (CE- or OE-controlled) and two write cycles (WE- or CE-controlled), with timing parameters tightly specified for tRC = 12 ns, tAA = 12 ns, tACE = 12 ns, and tPD = 12 ns. Data retention is guaranteed at VCC = 2.0V with ICCDR ≤150 µA and tR = 200 µs recovery time.

Key Specifications

Pinout & Package

Package: 28-pin Thin Small Outline Package Type I (TSOP I), 8 mm × 13.4 mm body, 0.55 mm pitch, lead-free (Pb-free) construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with AS6C4008-12TIN and IS61LV25616AL-12TQLI, the CY7C199CN-12VXIT uniquely combines 5V tolerance, 2.0V data retention, and TSOP I pinout-making it irreplaceable in legacy 5V industrial systems requiring fail-safe memory hold without hardware modification.

Availability

CY7C199CN-12VXIT is available at Aetrix Electronics and suitable for industrial PLC I/O buffers, legacy microcontroller data caches, and test equipment memory buffers requiring stable component supply and long-term obsolescence management.

Supply support for CY7C199CN-12VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions for embedded systems.

The CY7C199CN belongs to Cypress's legacy asynchronous SRAM product line, designed specifically for drop-in replacement of obsolete 28-pin DIP/SOJ memories in cost-sensitive, long-lifecycle industrial and instrumentation applications.

FAQ

Is CY7C199CN-12VXIT pin-compatible with CY7C199-12VXI?

Yes. The "N" suffix denotes the Pb-free version; all pin assignments, electrical characteristics, and timing parameters match CY7C199-12VXI exactly. The only difference is lead-free terminations and JEDEC-compliant packaging-no PCB or firmware changes are needed for migration.

What is the maximum clock frequency supported for read/write cycles?

The CY7C199CN-12VXIT does not use a clock; it is fully asynchronous. Maximum effective throughput is determined by tRC = 12 ns, yielding up to 83.3 million cycles per second in continuous burst mode, assuming proper address and control setup/hold timing compliance per datasheet Figures 7–9.

Can this SRAM operate reliably at 4.5V with full 12 ns timing?

Yes. The –12 speed grade is fully characterized down to VCC = 4.5V. All AC parameters-including tAA, tACE, and tWC-remain at 12 ns maximum across the full 4.5V–5.5V range, as confirmed in Table 4 (DC specs) and Table 6 (AC specs) of Rev. *B datasheet.

Does the automatic power-down feature require external circuitry to activate?

No. Power-down activates automatically whenever CE is driven HIGH, regardless of OE or WE state. No external timers, logic, or configuration registers are needed-the function is hardwired into the silicon and requires only correct CE assertion per the truth table on page 3 of the datasheet.