Infineon Technologies CY7C199CNL-15VXC

Overview

CY7C199CNL-15VXC from Cypress Semiconductor is a 256K-bit (32K × 8) asynchronous CMOS static RAM with 15 ns access time, 5.0 V ±10% supply voltage, TTL-compatible I/Os, and automatic CE-controlled power-down mode. It operates across commercial temperature range (0°C to +70°C) and retains data at 2.0 V, serving as main memory or buffer in microcontroller-based instrumentation systems.

For engineers reviewing the CY7C199CNL-15VXC datasheet, CY7C199CNL-15VXC pinout, CY7C199CNL-15VXC application, or CY7C199CNL-15VXC equivalent, key selection criteria include access time vs. standby current trade-off, TSOP I package compatibility with high-density PCB layouts, retention voltage margin, and CE/OE/WE timing coordination in burst-read or write-cycle-critical embedded control designs.

Technical Context

The CY7C199CNL-15VXC implements a fully asynchronous SRAM interface with independent address decoding, sense amplifier array, and bidirectional I/O buffers. Its CE-driven power-down circuit reduces standby current to 10 µA (CMOS input condition) or 30 µA (TTL input condition), while maintaining data integrity down to 2.0 V VCC.

Timing behavior is governed by overlapping CE and WE control signals: read cycles require CE and OE low with WE high; write cycles require CE and WE low with OE high. Address-to-data-valid (tAA = 15 ns) and CE-to-data-valid (tACE = 15 ns) are matched for deterministic bus interfacing without external wait-state generation.

Key Specifications

Pinout & Package

The CY7C199CNL-15VXC is packaged in a Pb-free 28-pin TSOP I (8 mm × 13.4 mm) with gull-wing leads, optimized for automated surface-mount assembly and thermal dissipation in compact PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with AS6C4008-15TIN and IS61LV25616AL-15TI, the CY7C199CNL-15VXC uniquely supports 5 V operation in a 28-pin TSOP I footprint with verified 2.0 V data retention-making it the only drop-in solution for legacy 5 V controller upgrades requiring minimal hardware modification.

Availability

CY7C199CNL-15VXC is available at Aetrix Electronics and suitable for industrial programmable logic controllers, automated test equipment buffers, and medical diagnostic display controllers requiring stable component supply and long-term manufacturing continuity.

Supply support for CY7C199CNL-15VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, PSoC, USB, and clock solutions for industrial, automotive, and consumer electronics.

The CY7C199CN series was designed specifically for cost-sensitive, high-reliability 5 V embedded systems requiring fast, low-power, pin-compatible SRAM replacements with guaranteed data retention under brown-out conditions.

FAQ

What is the maximum operating frequency supported by CY7C199CNL-15VXC?

The device does not operate on a clock signal-it is asynchronous. Its maximum effective interface rate is determined by the 15 ns read cycle time (tRC), allowing reliable operation with microcontrollers or FPGAs generating address and control strobes at ≤66 MHz (1/15 ns). No internal PLL or clock multiplier is present.

Can CY7C199CNL-15VXC be used in automotive applications?

No-this variant (CY7C199CNL-15VXC) is rated for commercial temperature range (0°C to +70°C) only. Automotive-grade versions (e.g., CY7C199CN-15VXI) exist with –40°C to +85°C qualification and AEC-Q100 stress testing, but differ in part number, marking, and packaging.

Does CY7C199CNL-15VXC require external refresh circuitry?

No. As a static RAM, it retains data indefinitely as long as VCC remains within specification and CE is asserted low during active use. No refresh cycles, timers, or external circuitry are needed-unlike DRAM or PSRAM devices.

How is data retention validated at 2.0 V?

Data retention at 2.0 V is specified per JEDEC JESD22-A107 and tested under ISB2 conditions (CE ≥ VCC – 0.3 V, all inputs at valid logic levels). The device maintains stored bits for >200 µs recovery time after VCC restoration, confirmed in production screening per datasheet page 7, Note 8.