Infineon Technologies CY7C199CNL-15VXIT

Overview

CY7C199CNL-15VXIT from Cypress Semiconductor is a 256-Kbit (32 K × 8) asynchronous CMOS static RAM with 15 ns access time, 5.0 V ±10% supply voltage, and automatic CE-controlled power-down. It serves as a non-volatile data buffer in microcontroller-based instrumentation systems requiring fast, deterministic read/write cycles and low standby current.

For engineers reviewing the CY7C199CNL-15VXIT datasheet, CY7C199CNL-15VXIT pinout, CY7C199CNL-15VXIT application, or CY7C199CNL-15VXIT equivalent, key selection criteria include TTL-compatible I/O timing, 500 pA CMOS standby current, 2.0 V data retention capability, and SOJ-28 package compatibility with legacy DIP-28 footprints.

Technical Context

This SRAM implements a fully asynchronous interface with independent chip enable (CE), output enable (OE), and write enable (WE) controls. Its internal architecture includes row/column decoders, sense amplifiers, and an automated power-down circuit triggered by CE high, reducing ICC to ≤500 pA at VCC = 5.0 V.

The device supports three primary operational modes: read (CE=LOW, OE=LOW, WE=HIGH), write (CE=LOW, WE=LOW), and standby (CE=HIGH). Timing is defined by tRC = 15 ns, tAA = 15 ns, and tPD = 15 ns, with all AC parameters guaranteed over commercial (0°C to +70°C) and industrial (–40°C to +85°C) temperature ranges.

Key Specifications

Pinout & Package

Package: 28-pin Small Outline J-lead (SOJ), lead-free, RoHS-compliant, 300 mil body width, 1.27 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV256AL-15KLI and AS6C4008-15ZIN, the CY7C199CNL-15VXIT uniquely combines 5 V TTL compatibility, 2.0 V data retention, and autonomous CE-triggered power-down in a pin-identical SOJ-28 package-critical for maintaining legacy system integrity without hardware or firmware changes.

Availability

CY7C199CNL-15VXIT is available at Aetrix Electronics and suitable for industrial data loggers, legacy microcontroller buffers, automotive diagnostic modules, and medical infusion pump controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C199CNL-15VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C199CN product line delivers cost-optimized, pin-compatible asynchronous SRAMs targeting legacy system maintenance and long-lifecycle embedded applications where 5 V tolerance and data retention under brown-out are essential.

FAQ

Is CY7C199CNL-15VXIT compatible with 5 V TTL logic families without level shifters?

Yes. The device features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive strength (IOH = –4 mA, IOL = 8 mA), allowing direct connection to 74LS, 74ALS, and other standard 5 V logic families without external translation circuitry.

What is the maximum operating current during active read/write cycles?

The maximum operating supply current (ICC) is 80 mA at VCC = 5.5 V, f = 1/tRC, and IOUT = 0 mA. This value is measured under worst-case AC conditions and includes dynamic switching current for all 8 I/O lines and internal array access.

Does CY7C199CNL-15VXIT require an external clock or refresh circuitry?

No. As a static RAM, it retains data indefinitely as long as VCC remains within specification and CE is held active. No clock signal, refresh cycles, or external timing controller is needed-operation is fully asynchronous and controlled solely by CE, OE, and WE timing.

Can CY7C199CNL-15VXIT operate in data retention mode at 2.0 V while maintaining full functionality?

No. At 2.0 V, only data retention is guaranteed; read/write operations are not functional. The device enters low-power retention mode when VCC drops to 2.0 V and CE is high, preserving stored bits until VCC returns to ≥4.5 V and normal operation resumes.