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Infineon Technologies CY7C199D-10VXIT
- Part No.:
- CY7C199D-10VXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
CY7C199D-10VXIT.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,833
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Product details
Overview
CY7C199D-10VXIT from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) high-speed CMOS static RAM with 10 ns access time, TTL-compatible I/O, and automatic CE-controlled power-down. It operates at 5 V ±0.5 V over –40 °C to +85 °C, draws 80 mA active current and 3 mA CMOS standby current, and supports data retention down to 2.0 V. It is used in legacy industrial controllers requiring fast, low-power parallel memory interfacing.
For engineers reviewing the CY7C199D-10VXIT datasheet, CY7C199D-10VXIT pinout, CY7C199D-10VXIT application, or CY7C199D-10VXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3 mA CMOS standby current, CE/OE/WE control logic compatibility with 5 V TTL microcontrollers, and SOJ/TSOP I package availability for board-level memory expansion.
Technical Context
The CY7C199D-10VXIT implements a fully asynchronous SRAM architecture with tri-state bidirectional I/O lines (I/O0–I/O7), independent chip enable (CE), output enable (OE), and write enable (WE) controls. Its address space spans A0–A14 (15-bit), supporting 32,768 × 8-bit organization.
It features dual power-down modes: ISB1 (10 mA, TTL input thresholds) and ISB2 (3 mA, CMOS input thresholds), triggered automatically when CE is HIGH. Data retention is guaranteed at VCC = 2.0 V with ICCDR ≤ 3 mA, and all AC timing parameters-including tRC = 10 ns, tACE = 10 ns, and tHZOE = 5 ns-are specified under 30-pF load and 3 ns signal transition conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32K × 8), enabling direct byte-wide interface to 8-bit microcontrollers without data bus multiplexing |
| Access time (tAA) | 10 ns at VCC = 5 V, supporting 100 MHz bus operation in systems with tight read-cycle constraints |
| Active supply current (ICC) | 80 mA max at 100 MHz, defining thermal budget for densely populated memory subsystems |
| CMOS standby current (ISB2) | 3 mA max, enabling low-power hold mode during processor sleep without external power gating |
| Data retention voltage | 2.0 V minimum, allowing battery-backed operation during main supply brownout or controlled shutdown |
| Input compatibility | TTL-level inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V), ensuring reliable interface with legacy 5 V microprocessors and FPGAs |
| Output drive | VOH ≥ 2.4 V at IOH = –4 mA, meeting minimum VIH requirements of downstream 5 V CMOS logic |
Pinout & Package
Available in Pb-free 28-pin TSOP I (thin small outline package) and 28-pin SOJ (small outline J-lead) packages. Both are surface-mount, JEDEC-compliant, and pin-compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit unidirectional address bus accepting full 32K-word range; no internal latching |
| I/O0–I/O7 | Bidirectional data bus | Tri-state outputs placed in high-Z when CE HIGH, OE HIGH, or WE LOW-enabling shared bus arbitration |
| CE | Chip enable (active LOW) | Primary device select; enables automatic power-down (ISB2 = 3 mA) when deasserted |
| OE | Output enable (active LOW) | Controls output drivers only; does not affect internal state or power mode |
| WE | Write enable (active LOW) | Initiates write cycle when CE and WE both LOW; no write protection or burst capability |
| VCC | Power supply | 5 V ±0.5 V nominal; must ramp >50 µs from 2.0 V to 4.5 V for reliable operation recovery |
| GND | Ground reference | Single ground plane required; decoupling capacitor (0.1 µF) recommended adjacent to VCC pin |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE power-down | Reduces ICC from 80 mA to 3 mA without external control logic or clock gating |
| TTL-compatible I/O | Eliminates level-shifting circuitry when interfacing with legacy 8051, Z80, or 68K-based controllers |
| 2.0 V data retention | Permits use with coin-cell backup or supercapacitor hold-up without auxiliary regulators |
| Tri-state bus drivers | Enables direct connection to shared data buses with multiple masters or peripherals |
| SOJ and TSOP I packaging | Supports both through-hole rework (SOJ) and high-density SMT (TSOP I) assembly strategies |
Applications
| Industrial PLC Memory Expansion | Legacy Automotive ECU Data Buffer |
|---|---|
Use Scenario: Adding non-volatile-capable fast memory to ladder-logic execution modules in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous parallel SRAM providing zero-wait-state read/write access for real-time I/O mapping tables. Use Value: 10 ns tAA ensures deterministic scan-cycle timing under 100 µs PLC scan intervals; ISB2 = 3 mA extends runtime during 24 VDC brownout events. | Use Scenario: Storing calibration coefficients and sensor history buffers in pre-OBD-II engine control units using 8-bit Motorola 68HC11 derivatives. IC Role / Device Role / Timing Role: Byte-accessible scratchpad memory mapped into the MCU's external address space via dedicated CS lines. Use Value: TTL-level compatibility eliminates need for bus transceivers; 2.0 V data retention preserves critical fault logs during ignition-off battery drain. |
| Medical Diagnostic Instrument FIFO | Avionics Display Controller Frame Buffer |
Use Scenario: Acting as first-in-first-out buffer between analog front-end ADCs and DSP processors in portable ultrasound imaging devices. IC Role / Device Role / Timing Role: Dual-port-like operation via rapid CE toggling to separate acquisition and processing phases. Use Value: tHZCE = 5 ns and tLZCE = 3 ns enable sub-100 ns context switching between capture and readout cycles. | Use Scenario: Holding rasterized display data for monochrome cockpit multifunction displays driven by radiation-tolerant 80C86 derivatives. IC Role / Device Role / Timing Role: Static frame buffer accessed synchronously with video timing generator signals. Use Value: 300-mil SOJ package provides mechanical robustness against vibration; tOHA = 3 ns prevents pixel corruption during horizontal retrace. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-10TIN | Same 32K × 8 organization and 10 ns speed, but CMOS-only I/O (VIH = 3.5 V min), higher ISB2 = 5 µA | Requires level translation when interfacing with 5 V TTL processors; better suited for new designs with 3.3 V or mixed-voltage domains | Select if migrating from legacy 5 V systems to lower-power 3.3 V architectures and redesigning I/O buffering |
| IS61LV25616AL-10TLI | Wider 16-bit bus (128K × 16), 3.3 V core, LVCMOS I/O, tAA = 10 ns, ISB = 12 µA | Not pin-compatible; requires PCB redesign and address/data bus remapping; supports higher bandwidth per cycle | Select only when upgrading system throughput and power efficiency justifies full memory subsystem redesign |
Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, CY7C199D-10VXIT uniquely maintains drop-in compatibility with 5 V TTL buses while delivering 3 mA standby-making it irreplaceable for field-serviceable upgrades of installed industrial hardware without logic layer changes.
Availability
CY7C199D-10VXIT is available at Aetrix Electronics and suitable for industrial PLC memory expansion, legacy automotive ECU data buffering, and medical diagnostic instrument FIFO applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C199D-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions derived from its 2020 acquisition of Cypress Semiconductor.
The CY7C199D belongs to Cypress's legacy parallel SRAM product line, designed specifically for seamless integration into 5 V TTL-based embedded systems where pin compatibility, timing predictability, and long-term obsolescence resilience are critical.
FAQ
Is CY7C199D-10VXIT compatible with 3.3 V microcontrollers?
No. The device requires 5 V ±0.5 V supply and has TTL-compatible inputs (VIH ≥ 2.2 V), but its outputs do not meet 3.3 V CMOS VIH minimums (≥2.7 V). Direct interface risks read failures. Level-shifting or voltage translation is mandatory for 3.3 V systems.
What is the difference between ISB1 and ISB2 standby current?
ISB1 (10 mA) applies when CE is HIGH and inputs meet TTL thresholds (VIH > 2.2 V or VIL < 0.8 V); ISB2 (3 mA) applies under stricter CMOS thresholds (VIH > VCC – 0.3 V or VIL < 0.3 V). ISB2 is the lowest achievable standby current and requires clean input signaling.
Can CY7C199D-10VXIT be used in place of CY7C199C?
Yes. The CY7C199D is explicitly pin- and function-compatible with the CY7C199C per the datasheet, with identical timing and electrical specs. The 'D' revision includes improved data retention and tighter AC parameter distributions, making it a recommended replacement.
Does this SRAM support battery backup without external circuitry?
It supports data retention at 2.0 V, but requires external circuitry to switch VCC to a backup source (e.g., coin cell or supercapacitor) when main supply fails. No internal switchover logic or diode-OR circuitry is integrated-the design responsibility lies with the host system.
CY7C199D-10VXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
CY7C199D-10VXIT FAQ
1.How can I place an order for CY7C199D-10VXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C199D-10VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C199D-10VXIT reliable?
The price and inventory of CY7C199D-10VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C199D-10VXIT is usually 5 days.
3.What payment methods are accepted for CY7C199D-10VXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C199D-10VXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C199D-10VXIT?
CY7C199D-10VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C199D-10VXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C199D-10VXIT?
For technical support, including CY7C199D-10VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C199D-10VXIT requirements.
6.How does Aetrix verify that CY7C199D-10VXIT is sourced from the original manufacturer or authorized distributors?
All CY7C199D-10VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C199D-10VXIT meets industry standards.
7.What is the process for return or replacement of CY7C199D-10VXIT?
All CY7C199D-10VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C199D-10VXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C199D-10VXIT part is unused and in its original packaging.
Return procedure for CY7C199D-10VXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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