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Infineon Technologies CY7C199D-25SXE
- Part No.:
- CY7C199D-25SXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY7C199D-25SXE.pdf
- Description:
- IC SRAM 256K PARALLEL 28SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,705
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Product details
Overview
CY7C199D-25SXE from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) high-speed CMOS static RAM with 10 ns access time, TTL-compatible I/O, and automatic CE-controlled power-down. It operates at 5 V ±0.5 V over –40 °C to +85 °C, draws 80 mA active current and 3 mA standby current, and supports data retention down to 2.0 V. It is used in legacy industrial controllers requiring fast, low-power parallel memory interfacing.
For engineers reviewing the CY7C199D-25SXE datasheet, CY7C199D-25SXE pinout, CY7C199D-25SXE application, or CY7C199D-25SXE equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3 mA CMOS standby current, CE/OE/WE control logic compatibility with 5 V TTL microcontrollers, and SOJ-28 package footprint for board-level memory expansion.
Technical Context
The CY7C199D-25SXE implements a synchronous, address-decoded SRAM core with tri-state bidirectional I/O drivers and dual enable architecture (CE and OE). Its CE-driven automatic power-down reduces ICC to 3 mA when deselected, while maintaining full TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA).
It uses standard parallel bus protocol: read requires CE and OE LOW with WE HIGH; write requires CE and WE LOW. Address latching is edge-independent - data is sampled on stable address (A0–A14) during valid CE/WE windows, supporting direct interface to 8-bit microprocessors like Intel 80C88 or Motorola 68000 derivatives without glue logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32,768 × 8), enabling 32 KB byte-addressable storage for firmware or buffer applications |
| tAA (access time) | 10 ns - guarantees sub-100 MHz bus operation with zero wait states on compatible controllers |
| VCC operating range | 5.0 V ± 0.5 V - matches legacy 5 V TTL system rails without level-shifting |
| ISB2 (standby current) | 3 mA - enables low-power sleep mode during CPU idle cycles in embedded controllers |
| Data retention voltage | 2.0 V - allows battery-backed operation during brown-out conditions without data loss |
| Input compatibility | TTL-level inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V) - directly interfaces with 5 V microcontrollers and FPGAs |
| Output drive | VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA - meets TTL fan-out requirements (≥10 LS-TTL loads) |
Pinout & Package
Package: 28-pin Small Outline J-Lead (SOJ), 300-mil width, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus supporting 32K-word addressing; no internal latching - must be stable before CE/WE assertion |
| I/O0–I/O7 | Bidirectional data bus | Tri-state outputs automatically enter high-Z when CE HIGH, OE HIGH, or WE LOW - prevents bus contention during read/write transitions |
| CE | Chip enable (active LOW) | Primary device select; enables automatic power-down (ISB2 = 3 mA) when HIGH - critical for multi-chip memory banks |
| OE | Output enable (active LOW) | Controls output drivers only; does not affect power state - allows read-modify-write without toggling CE |
| WE | Write enable (active LOW) | Initiates write cycle when CE is also LOW; data sampled on rising edge of terminating signal (CE or WE) |
| VCC, GND | Power supply pins | Single 5 V supply; decoupling required within 10 mm of VCC/GND pair due to 10 ns switching transients |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE power-down | Reduces ICC from 80 mA to 3 mA when CE is deasserted - eliminates need for external power-gating circuitry |
| TTL-compatible I/O | Eliminates level translators when interfacing with 5 V microcontrollers (e.g., 8051, Z80, 68000), reducing BOM count and layout complexity |
| Tri-state output drivers | Prevents bus conflicts in shared-data-bus systems (e.g., ISA-style backplanes) without external bus transceivers |
| 2.0 V data retention | Enables use with backup coin-cell batteries or supercapacitors during main power failure - preserves configuration or logging data |
Applications
| Industrial PLC Memory Buffer | Legacy Test Equipment Data Log |
|---|---|
Use Scenario: Storing real-time sensor readings and control state in programmable logic controllers with 8-bit parallel buses. IC Role / Device Role / Timing Role: Byte-wide SRAM acting as volatile working memory for ladder logic execution and I/O scan buffering. Use Value: 10 ns tAA enables deterministic scan cycle times under 10 µs; 3 mA ISB2 extends runtime during auxiliary power loss. | Use Scenario: Capturing analog-to-digital conversion results in automated test systems using GPIB or ISA-bus host controllers. IC Role / Device Role / Timing Role: High-speed acquisition buffer synchronized to external trigger signals via CE/WE strobes. Use Value: Tri-state I/O and TTL compatibility allow direct connection to ISA bus data lines without bus transceivers or level shifters. |
| Medical Diagnostic Instrument Cache | Avionics Display Controller Frame Buffer |
Use Scenario: Temporary storage of image pixel data during ultrasound or ECG waveform processing in Class II medical devices. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for DSP co-processors handling time-critical signal reconstruction. Use Value: 2.0 V data retention ensures patient waveform integrity during brief AC mains interruption per IEC 60601-1 clause 8.7.2. | Use Scenario: Holding rendered display frames in ruggedized cockpit displays interfaced to MIL-STD-1553 or ARINC 429 host processors. IC Role / Device Role / Timing Role: Parallel-access frame buffer supporting 60 Hz refresh with minimal CPU overhead via burst-read capability. Use Value: SOJ-28 package provides mechanical robustness against vibration; –40 °C to +85 °C rating meets DO-160 Section 22 Category A environmental requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-10TIN | CMOS-only inputs (VIH = 0.7×VCC), 2.7–3.6 V supply, 10 ns tAA, 256 Kbit | Requires level translation for 5 V TTL hosts; unsuitable for direct replacement without redesign | Select only for new 3.3 V designs where lower active power (15 mA) and smaller TSOP-28 footprint are prioritized |
| IS61LV25616AL-10TLI | 3.3 V supply, LVCMOS I/O, 256 Kbit × 16, 10 ns tAA, 32-pin TSOP | 16-bit bus width and different pinout - incompatible with 8-bit systems without PCB revision | Choose for higher bandwidth needs in 3.3 V systems; not drop-in for CY7C199D-25SXE's 8-bit, 5 V, SOJ-28 layout |
Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, the CY7C199D-25SXE uniquely supports legacy 5 V TTL signaling and SOJ-28 footprint - making it irreplaceable in field-repair scenarios for installed industrial hardware without board rework.
Availability
CY7C199D-25SXE is available at Aetrix Electronics and suitable for industrial PLCs, legacy test equipment, medical diagnostic instruments, and avionics display controllers requiring stable component supply and long-term obsolescence support.
Supply support for CY7C199D-25SXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial longevity.
The CY7C199D belongs to Infineon's legacy parallel SRAM product line, designed specifically for backward-compatible memory upgrades in 5 V TTL-based industrial and instrumentation systems where pin- and function-equivalence to Cypress-era parts is mandatory.
FAQ
Is CY7C199D-25SXE compatible with 3.3 V microcontrollers?
No. The CY7C199D-25SXE requires a 5 V ±0.5 V supply and features TTL-compatible inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V), but its outputs do not meet 3.3 V logic thresholds. Direct interface with 3.3 V controllers requires level-shifting circuitry, as confirmed by VOH = 2.4 V minimum - below the 3.3 V system's VIH requirement of ≥2.6 V.
What is the maximum clock frequency supported for read/write cycles?
The CY7C199D-25SXE does not use a clock signal. It is an asynchronous SRAM: timing is governed by setup/hold windows relative to CE, OE, and WE edges. With tRC = 10 ns, the maximum sustained random-access rate is 100 MHz - but actual bus throughput depends on controller handshake timing and address stability, not a clock domain.
Does CY7C199D-25SXE support battery backup for data retention?
Yes. At VCC = 2.0 V, the device retains stored data with ICCDR ≤ 3 mA. This allows integration with lithium coin cells (e.g., CR2032) or supercapacitors in maintenance-free backup circuits - verified per data retention waveform Figure 4 and tCDR = 0 ns specification in the datasheet.
Can CY7C199D-25SXE replace CY7C199C in existing designs?
Yes. The CY7C199D-25SXE is explicitly pin- and function-compatible with CY7C199C per the datasheet Feature list and Selection Guide. Both share identical SOJ-28/TSOP-I footprints, AC/DC electrical specs, and truth table behavior - making it a validated drop-in upgrade for improved temperature range (–40 °C to +85 °C) and updated manufacturing process.
CY7C199D-25SXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 28-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOIC
CY7C199D-25SXE FAQ
1.How can I place an order for CY7C199D-25SXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C199D-25SXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C199D-25SXE reliable?
The price and inventory of CY7C199D-25SXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C199D-25SXE is usually 5 days.
3.What payment methods are accepted for CY7C199D-25SXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C199D-25SXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C199D-25SXE?
CY7C199D-25SXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C199D-25SXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C199D-25SXE?
For technical support, including CY7C199D-25SXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C199D-25SXE requirements.
6.How does Aetrix verify that CY7C199D-25SXE is sourced from the original manufacturer or authorized distributors?
All CY7C199D-25SXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C199D-25SXE meets industry standards.
7.What is the process for return or replacement of CY7C199D-25SXE?
All CY7C199D-25SXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C199D-25SXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C199D-25SXE part is unused and in its original packaging.
Return procedure for CY7C199D-25SXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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