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Infineon Technologies CY7C2163KV18-450BZXI

Part No.:
CY7C2163KV18-450BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2163KV18-450BZXI.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,761

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Product details

Overview

CY7C2163KV18 from Infineon Technologies (formerly Cypress) is a 18-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR interfaces operating at 1100 Mbps effective data rate (550 MHz clock), and 1M × 18 organization. Designed for high-bandwidth networking buffers and packet forwarding engines in telecom infrastructure.

For engineers reviewing the CY7C2163KV18 datasheet, CY7C2163KV18 pinout, CY7C2163KV18 application, or CY7C2163KV18 equivalent, key selection criteria include 550 MHz max clock frequency, HSTL I/O compatibility, ODT support on D[17:0]/BWS[1:0]/K/K inputs, and 165-ball FBGA package thermal and routing constraints.

Technical Context

The CY7C2163KV18 implements a true dual-port synchronous SRAM architecture with independent read and write pipelines, enabling concurrent access without bus turnaround. Its QDR II+ core uses two phase-aligned input clocks (K and K) to latch addresses and data on rising edges only, while echo clocks (CQ/CQ) provide source-synchronous timing for reliable data capture at 1100 Mbps.

Internally, it integrates a PLL for precise data placement, on-die termination configurable via ODT and ZQ pins, and synchronous self-timed writes. The device supports both 1.5 V and 1.8 V I/O supply (VDDQ = 1.4 V to VDD), with core VDD = 1.8 V ± 0.1 V, and delivers full data coherency across all burst transfers.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (1M × 18 configuration)
Max Clock Frequency 550 MHz - enables 1100 Mbps per data line via DDR interface
Read Latency 2.5 clock cycles - deterministic timing for pipeline scheduling in switch ASICs
I/O Voltage Support VDDQ = 1.4 V to 1.8 V - interoperable with 1.5 V and 1.8 V system buses
On-Die Termination Supported on D[17:0], BWS[1:0], K/K - eliminates external 50 Ω resistors, reduces PCB area by ~12 mm² per port
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in dense router line cards
Core Supply VDD = 1.8 V ± 0.1 V - low-power operation compatible with advanced SoC power domains

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous data input Latched on rising edges of K/K; drives 18-bit write data into memory array during active WPS cycle
Q[17:0] Synchronous data output Drives bursted 4×18-bit read data edge-aligned with CQ/CQ; tristated when RPS deasserted
RPS / WPS Port select control Active-low synchronous enables for independent read/write port activation; enables depth expansion
BWS[1:0] Byte write select Active-low controls write masking: BWS0 → D[8:0], BWS1 → D[17:9]; preserves unselected bytes
K / K Dual-phase input clock Rising-edge–triggered for all synchronous inputs; K used for address/data latching, K for complementary timing
CQ / CQ Echo clock outputs Free-running, source-synchronous clocks aligned to K/K; simplify high-speed data capture in FPGA/ASIC receivers
QVLD Valid data indicator Asserted coincident with first valid Q[17:0] word in burst; used for FIFO pointer advancement or handshake
ODT On-die termination control Configures ODT range (LOW = RQ/3.33, HIGH = RQ/1.66); default HIGH if floating
ZQ Impedance calibration reference Connects to precision 240 Ω resistor to ground; sets output driver impedance to 0.2 × RQ (~48 Ω)

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling frequency by 4× versus single-word access - lowers EMI and simplifies address routing
Separate read/write data paths Eliminates bus turnaround delay; enables true concurrent read+write in same clock cycle - critical for full-duplex packet buffering
HSTL Class I inputs / variable-drive outputs Ensures signal integrity at 550 MHz with controlled slew rates; matches industry-standard memory interface standards
Programmable ODT with ZQ calibration Removes need for 36 external 50 Ω resistors (D[17:0]+BWS[1:0]+K/K), reducing BOM cost and layout complexity
JTAG 1149.1 test access port Enables boundary scan testing of interconnects in high-density BGA layouts - essential for production test coverage

Applications

High-Speed Network Switch Buffer Telecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between ingress parser and egress scheduler, synchronized to 550 MHz fabric clock.

Use Value: Concurrent read/write capability ensures zero-latency header lookup while forwarding - sustains 100 Gbps+ line-rate performance.

Use Scenario: Temporary storage of ATM cells or IP fragments in OC-192/STM-64 optical transport equipment.

IC Role / Device Role / Timing Role: Burst-access memory interfacing directly to SerDes PHYs via HSTL, using CQ/CQ for source-synchronous capture.

Use Value: 2.5-cycle latency and echo clocks enable deterministic 1100 Mbps data transfer - meets SONET jitter tolerance requirements.

Baseband Processing in 5G RU AI Accelerator Weight Cache

Use Scenario: Real-time buffering of IQ samples between RF front-end ADCs and digital pre-distortion (DPD) engines.

IC Role / Device Role / Timing Role: Low-latency SRAM providing pipelined sample storage with ODT-matched impedance to minimize reflection-induced bit errors.

Use Value: 1.8 V core + 1.5 V I/O support allows direct integration with 5G SoCs - avoids level-shifter overhead and timing skew.

Use Scenario: High-bandwidth cache for weight matrices in edge AI inference accelerators requiring rapid matrix-vector loads.

IC Role / Device Role / Timing Role: Burst-access memory feeding parallel MAC units; DOFF pin configures 2.5-cycle latency for optimal throughput/latency trade-off.

Use Value: Four-word burst delivers 72 bits/cycle - doubles effective bandwidth over single-word SRAMs at same clock rate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PF 18-Mbit QDR II, 1000 Mbps (500 MHz), no ODT, 165-ball FBGA Lacks on-die termination - requires external 50 Ω resistors on all data/control lines Select when legacy board design already includes external termination and cost sensitivity outweighs routing simplification
AS7C331024PFSIG 32-Mbit sync SRAM, 167 MHz, single-port, 100-pin TQFP, no DDR or burst Lower bandwidth, higher latency, no concurrent access - suitable only for non-pipelined control-plane buffers Choose only for cost-constrained, low-throughput management processor subsystems where QDR features are unnecessary

Compared with IDT72T3615L10PF and AS7C331024PFSIG, CY7C2163KV18 uniquely combines 550 MHz operation, ODT, and true dual-port burst architecture - making it the only option capable of sustaining 1100 Mbps sustained bandwidth with minimal PCB routing overhead in next-gen infrastructure designs.

Availability

CY7C2163KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and 5G baseband processing requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C2163KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive MCUs, and high-performance memory solutions.

CY7C2163KV18 belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in carrier-grade networking and communications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C2163KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency required for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled at power-up and must remain stable during operation to avoid timing violations.

Can CY7C2163KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The device supports VDDQ from 1.4 V to VDD, allowing 1.5 V I/O operation with 1.8 V core supply. This enables interoperability with 1.5 V FPGA I/O banks without level shifters, provided VDDQ decoupling meets datasheet ripple specifications (< ±30 mV).

How is on-die termination calibrated on CY7C2163KV18?

ODT calibration uses the ZQ pin connected to a precision 240 Ω resistor to ground. During power-up initialization, the device measures this reference and sets internal output drivers to 48 Ω (0.2 × 240 Ω). ODT range (low/high) is selected by the logic level on the ODT pin, with HIGH as default if left floating.

Is CY7C2163KV18 pin-compatible with CY7C2165KV18?

No. Although both share the same 165-ball FBGA package, CY7C2163KV18 (1M × 18) and CY7C2165KV18 (512K × 36) have different address widths (18 vs. 17 bits), byte write select count (BWS[1:0] vs. BWS[3:0]), and pin assignments for D/Q buses - requiring distinct PCB layouts and firmware addressing schemes.

CY7C2163KV18-450BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2163KV18-450BZXI FAQ

1.How can I place an order for CY7C2163KV18-450BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2163KV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2163KV18-450BZXI reliable?

The price and inventory of CY7C2163KV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2163KV18-450BZXI is usually 5 days.

3.What payment methods are accepted for CY7C2163KV18-450BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2163KV18-450BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2163KV18-450BZXI?

CY7C2163KV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2163KV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2163KV18-450BZXI?

For technical support, including CY7C2163KV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2163KV18-450BZXI requirements.

6.How does Aetrix verify that CY7C2163KV18-450BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C2163KV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2163KV18-450BZXI meets industry standards.

7.What is the process for return or replacement of CY7C2163KV18-450BZXI?

All CY7C2163KV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2163KV18-450BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2163KV18-450BZXI part is unused and in its original packaging.

Return procedure for CY7C2163KV18-450BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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