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Infineon Technologies CY7C2165KV18-550BZC

Part No.:
CY7C2165KV18-550BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2165KV18-550BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,459

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Product details

Overview

CY7C2165KV18 from Infineon Technologies (formerly Cypress) is a 512K × 36-bit, 18-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 550 MHz with DDR interfaces on both read and write ports (1100 MT/s), supports 1.8 V core and 1.4–1.8 V I/O supply, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C2165KV18 datasheet, CY7C2165KV18 pinout, CY7C2165KV18 application, or CY7C2165KV18 equivalent, key selection criteria include its 550 MHz clock frequency, 2.5-cycle read latency mode, ODT support on D[35:0]/BWS[3:0]/K/K inputs, echo clocks (CQ/CQ) for timing margin, and JTAG 1149.1 test access port compatibility.

Technical Context

This QDR II+ SRAM implements fully independent read and write ports with separate data paths-eliminating bus turnaround-and uses dual input clocks (K and K) to latch addresses and data on rising edges only. Its PLL ensures precise data placement, while echo clocks CQ and CQ are free-running and synchronized to K/K for simplified high-speed capture.

The device supports two latency modes: 2.5-cycle read latency when DOFF = HIGH (default QDR II+ operation), and 1-cycle latency when DOFF = LOW (QDR I compatibility mode). Depth expansion is enabled via RPS/WPS and BWS[3:0], and all writes are synchronous, self-timed, and fully coherent across the 4-array internal structure (128K × 36 per array).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36 configuration)
Max Clock Frequency550 MHz - enables 1100 MT/s DDR throughput on both ports
Read Latency2.5 cycles - deterministic timing for pipeline-aligned burst reads
VDD / VDDQCore: 1.8 V ±0.1 V; I/O: 1.4–1.8 V - supports mixed-voltage system integration
Burst LengthFour-word - reduces address bus toggling and simplifies controller logic
On-Die TerminationConfigurable ODT on D[35:0], BWS[3:0], K/K - eliminates external resistors and improves signal integrity
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-pin-count, low-inductance routing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant non-lead-free construction.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsLatched on rising edges of K/K; full 36-bit parallel write path
Q[35:0]Synchronous read data outputsDDR output driven on K/K rising edges; tristated when RPS deasserted
RPS / WPSRead/Write port select (active-low)Independent enable control per port; allows concurrent read/write operations
BWS[3:0]Byte write select (active-low)Enables selective 9-bit byte writes; BWS0–BWS3 cover D[8:0] to D[35:27]
K / KDual-phase input clocksRising-edge-only sampling; K controls read port, K controls write port
CQ / CQEcho clocksFree-running, edge-aligned copies of K/K for source-synchronous data capture
QVLDValid data indicatorAsserted synchronously with CQ/CQ to mark valid Q[35:0] output windows
ODTOn-die termination controlSelects ODT range (RQ/3.33 or RQ/1.66) based on logic level at power-up
ZQImpedance calibration referenceConnects to external precision resistor (175–350 Ω) to calibrate output driver impedance

Key Features

FeatureDesign Value
Separate read/write data portsEnables true concurrent transactions without bus contention or turnaround delay
Four-word burst architectureReduces effective address bus frequency by 4×, easing controller timing closure
Programmable ODT on data, BWS, and clock inputsEliminates 72 external termination resistors (for D[35:0]+BWS[3:0]+K/K), saving PCB area and cost
Edge-aligned echo clocks (CQ/CQ)Provides deterministic, jitter-tolerant strobes for reliable DDR data capture at 1100 MT/s
JTAG 1149.1 test access portEnables boundary scan testing, debug visibility, and production test automation

Applications

High-Speed Network Switch BufferTelecom Line Card Packet Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in multi-gigabit L2/L3 switching ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress packet buffer with zero-turnaround read-write concurrency.

Use Value: 550 MHz clock + 2.5-cycle latency delivers sustained 1100 MT/s bandwidth per port, matching 10G/25G MAC interface rates.

Use Scenario: Deep buffering for bursty traffic in 40G/100G OTN framer and mapper subsystems.

IC Role / Device Role / Timing Role: High-coherency memory for header/payload separation and reassembly pipelines.

Use Value: Full data coherency and synchronous self-timed writes ensure deterministic latency for real-time traffic shaping.

Baseband Processing MemoryTest Equipment Pattern Generator

Use Scenario: Interfacing with FPGA-based LTE/5G baseband processors for channel estimation and FFT buffers.

IC Role / Device Role / Timing Role: Low-latency, burst-access memory for time-critical symbol processing loops.

Use Value: Four-word burst and 1.4–1.8 V flexible I/O allow seamless interfacing with 1.5 V or 1.8 V FPGA I/O banks.

Use Scenario: Generating high-fidelity, multi-channel digital stimulus waveforms in ATE systems.

IC Role / Device Role / Timing Role: Deterministic pattern storage with precise echo-clock-aligned output timing.

Use Value: CQ/CQ echo clocks and QVLD provide sub-cycle timing alignment for <100 ps setup/hold margin at 550 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C3256A-15JCINAsynchronous 32K × 8 SRAM; no DDR, no ODT, no echo clocks; 15 ns accessUsed in legacy control-plane buffers where latency >10 ns is acceptable and concurrency not requiredSelect only for cost-sensitive, non-pipelined designs lacking high-speed timing constraints
MT47H64M16HR-37EDDR2 SDRAM; 64M × 16; requires refresh, command/address bus, and complex controllerUsed in large-capacity, lower-bandwidth system memory where density >1 Gbit is neededChoose when >128 Mbit capacity is mandatory and deterministic latency is secondary to cost/density

Compared with AS7C3256A-15JCIN and MT47H64M16HR-37E, CY7C2165KV18 uniquely delivers concurrent read/write at 1100 MT/s with guaranteed 2.5-cycle latency and integrated ODT-making it irreplaceable for QDR II+ protocol-compliant, high-throughput buffer designs.

Availability

CY7C2165KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and baseband processing memory requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CY7C2165KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and memory solutions.

CY7C2165KV18 belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth packet buffering in networking and communications infrastructure where zero bus turnaround and sub-3-cycle latency are critical.

FAQ

What is the function of the DOFF pin on CY7C2165KV18?

The DOFF (Data Off) pin configures read latency mode: when asserted HIGH, the device operates in standard QDR II+ mode with 2.5-cycle read latency; when LOW, it emulates QDR I behavior with 1-cycle latency. This pin is sampled at power-up and remains latched during operation, enabling system-level latency tuning without firmware changes.

How does on-die termination (ODT) work on CY7C2165KV18?

ODT is controlled by the ODT pin and calibrated using the ZQ pin connected to an external precision resistor (175–350 Ω). When ODT is enabled, it applies programmable termination to D[35:0], BWS[3:0], and K/K inputs-reducing reflections and eliminating 72 discrete resistors. The ODT range (low/high) is selected by ODT pin logic level at power-up initialization.

Can CY7C2165KV18 be used with a 1.5 V I/O supply?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation per datasheet Note 1. All HSTL-compatible I/O buffers (inputs and outputs) are fully functional at 1.5 V, enabling interoperability with 1.5 V FPGAs and ASICs without level-shifting circuitry.

What is the role of CQ and CQ echo clocks?

CQ and CQ are free-running, edge-aligned copies of the K and K input clocks, respectively. They serve as source-synchronous strobes for capturing Q[35:0] output data, providing timing margin in high-speed systems. Unlike K/K, they do not control internal logic-only aid external data capture-and are guaranteed to track K/K with minimal skew per datasheet AC specifications.

CY7C2165KV18-550BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2165KV18-550BZC FAQ

1.How can I place an order for CY7C2165KV18-550BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2165KV18-550BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2165KV18-550BZC reliable?

The price and inventory of CY7C2165KV18-550BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2165KV18-550BZC is usually 5 days.

3.What payment methods are accepted for CY7C2165KV18-550BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2165KV18-550BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2165KV18-550BZC?

CY7C2165KV18-550BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2165KV18-550BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2165KV18-550BZC?

For technical support, including CY7C2165KV18-550BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2165KV18-550BZC requirements.

6.How does Aetrix verify that CY7C2165KV18-550BZC is sourced from the original manufacturer or authorized distributors?

All CY7C2165KV18-550BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2165KV18-550BZC meets industry standards.

7.What is the process for return or replacement of CY7C2165KV18-550BZC?

All CY7C2165KV18-550BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2165KV18-550BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2165KV18-550BZC part is unused and in its original packaging.

Return procedure for CY7C2165KV18-550BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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