Infineon Technologies CY7C2165KV18-550BZXC

Overview

CY7C2165KV18-550BZXC from Infineon Technologies (formerly Cypress) is a 512K × 36, 18-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 550 MHz with DDR interfaces on both read and write ports (1100 MT/s), supports 1.8 V core and 1.4–1.8 V I/O supply, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C2165KV18-550BZXC datasheet, CY7C2165KV18-550BZXC pinout, CY7C2165KV18-550BZXC application, or CY7C2165KV18-550BZXC equivalent, key selection criteria include its 550 MHz clock frequency, 2.5-cycle read latency mode, ODT support on D[35:0]/BWS[3:0]/K/K inputs, HSTL I/O compatibility, and JTAG 1149.1 test access capability.

Technical Context

This QDR II+ SRAM implements fully independent read and write ports with separate data buses-eliminating bus turnaround overhead-and uses dual input clocks (K and K) sampled only on rising edges to synchronize all address, data, and control signals. Its internal PLL ensures precise data placement aligned with echo clocks CQ/CQ, enabling reliable capture in high-speed systems.

The device supports depth expansion via RPS/WPS port selects and byte-level writes using BWS[3:0], while DOFF pin configures read latency between 2.5 cycles (DOFF = HIGH) and 1 cycle (DOFF = LOW). ODT impedance range is selected at power-up via ODT pin state and ZQ-resistor tuning (RQ/3.33 or RQ/1.66).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant non-Pb finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C331024B-166BIN and MT47H64M16HR-37E:H, CY7C2165KV18-550BZXC uniquely delivers concurrent 1100 MT/s read/write bandwidth with sub-3-cycle latency and zero-refresh operation-critical for real-time packet and signal processing where timing predictability cannot be compromised.

Availability

CY7C2165KV18-550BZXC is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and baseband processing in 4G/LTE radio units requiring stable component supply and long-term lifecycle support.

Supply support for CY7C2165KV18-550BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

CY7C2165KV18 belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic-latency, high-throughput data buffering in networking infrastructure, wireless base stations, and FPGA-accelerated compute systems.

FAQ

What is the function of the DOFF pin on CY7C2165KV18-550BZXC?

The DOFF (Data-Off) pin configures the device's read latency mode: when asserted HIGH, it enables QDR II+ operation with 2.5-cycle read latency; when LOW, it reverts to QDR I compatibility mode with 1-cycle latency. This pin is sampled during initialization and determines internal timing behavior for all subsequent read operations.

Does CY7C2165KV18-550BZXC require external termination resistors?

No. The device integrates on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs. ODT range is selected at power-up via the ODT pin state and calibrated using an external resistor on the ZQ pin (175–350 Ω), eliminating the need for 36+ discrete termination resistors on the data and control buses.

How does the CY7C2165KV18-550BZXC support depth expansion?

Depth expansion is achieved using independent RPS (Read Port Select) and WPS (Write Port Select) pins. Each device can be enabled or disabled per port synchronously on the K clock edge, allowing multiple devices to share the same address and data buses while maintaining full read/write concurrency across the expanded memory array.

Is CY7C2165KV18-550BZXC compatible with 1.5 V I/O systems?

Yes. The device supports VDDQ = 1.4 V to 1.8 V, explicitly including 1.5 V operation per datasheet Note 1. Its HSTL-compatible output drivers and input receivers are designed for full functionality across this range, enabling interoperability with legacy 1.5 V ASICs and FPGAs without level-shifting.