Infineon Technologies CY7C2168KV18-550BZC
- Part No.:
- CY7C2168KV18-550BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2168KV18-550BZC.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2168KV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency (when DOFF = HIGH), 550 MHz clock operation, and on-die termination (ODT) for D[x:0], BWS[x:0], and K/K inputs. It delivers 1100 MT/s data throughput via double-data-rate I/O and supports HSTL I/O with VDDQ = 1.4 V to 1.8 V, targeting high-bandwidth buffering in network packet processors and baseband subsystems.
For engineers reviewing the CY7C2168KV18 datasheet, CY7C2168KV18 pinout, CY7C2168KV18 application, or CY7C2168KV18 equivalent, key selection considerations include its 2.5-cycle vs. 1-cycle configurable read latency, echo-clock–synchronized QVLD timing, ODT impedance range selection via ODT pin, and FBGA-165 package compatibility with high-speed PCB routing constraints.
Technical Context
This SRAM implements a synchronous pipelined architecture where all address, control, and data signals are registered on rising edges of complementary clocks K and K. Read operations initiate on K's rising edge, with first data valid 2.5 cycles later-aligned to both K and K-and second word output on the subsequent K edge.
The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) phase-matched to K/K for simplified system-level data capture, and a ZQ-calibrated output driver network enabling 0.2 × RQ impedance tuning. ODT is programmable at power-up via the ODT pin to select low-range (RQ/3.33) or high-range (RQ/1.66) termination for inputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 18 Mbit (1M × 18 configuration) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR data rate |
| Read Latency | Configurable: 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports dual-voltage system interfacing |
| On-Die Termination | Supported on D[17:0], BWS[1:0], K, K - eliminates external resistors |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-pin-count, high-speed layout |
| Core Supply | VDD = 1.8 V ± 0.1 V - defines stable internal logic operation voltage |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant non-Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | Transfers 18-bit words on rising edges of K/K; tri-states automatically during deselect |
| K / K | Complementary input clocks | K rising edge initiates all accesses; both edges register write data and drive read data |
| CQ / CQ | Synchronous echo clocks | Free-running, phase-aligned outputs that simplify high-speed data capture without board-level skew compensation |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ; asserts precisely when DQ[17:0] contains valid read data |
| ODT | On-die termination select | Configures ODT resistance range at power-up: LOW → RQ/3.33 (175–350 Ω), HIGH → RQ/1.66 (175–250 Ω) |
| ZQ | Impedance calibration reference | Connects to external resistor to ground; sets output driver and ODT impedance to 0.2 × RQ |
| LD | Load strobe | Sampled on K rising edge; defines start of bus cycle containing address and R/W direction |
| BWS0, BWS1 | Byte write selects | Active-low controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling frequency by 50% versus single-word access, lowering EMI and routing congestion |
| Configurable 1- or 2.5-cycle read latency | DOFF pin selects between DDR I–compatible low-latency mode and DDR II+ high-throughput mode |
| Integrated echo clocks (CQ/CQ) | Eliminates need for separate capture clocks per SRAM in multi-device systems, simplifying timing closure |
| HSTL-compatible I/O with variable drive strength | Ensures signal integrity at 1100 MT/s while supporting mixed-voltage backplane or ASIC interfaces |
| JTAG 1149.1 test access port | Enables boundary-scan testing and in-system programming without dedicated debug headers |
Applications
| Network Packet Buffering | Baseband Signal Processing |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or PCIe packets in telecom line cards requiring deterministic latency and zero wait-state burst reads. IC Role / Device Role / Timing Role: High-speed shared-memory buffer interfaced to FPGA or ASIC fabric via DDR II+ bus with echo-clock–driven data capture. Use Value: 2.5-cycle latency mode ensures predictable 5.45 ns (at 550 MHz) data availability window aligned to CQ/CQ, enabling lockstep processing across multiple channels. | Use Scenario: Real-time buffering of OFDM symbol streams in LTE/5G radio units before FFT/IFFT processing. IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as ping-pong frame buffer between ADC/DAC interfaces and DSP cores. Use Value: On-die termination eliminates 36 external 50 Ω resistors per device, reducing PCB area by >12 mm² and improving signal fidelity at 1100 MT/s. |
| High-Performance Test Equipment | Industrial Vision Frame Storage |
Use Scenario: Capturing high-resolution oscilloscope waveforms at multi-GS/s sampling rates for real-time analysis. IC Role / Device Role / Timing Role: Low-jitter, pipeline-optimized memory staging raw ADC samples prior to compression or triggering logic. Use Value: QVLD pin provides unambiguous, edge-aligned validity flag synchronized to echo clocks-removing setup/hold uncertainty in FPGA-based capture engines. | Use Scenario: Storing full HD (1920×1080) monochrome image frames at 120 fps in machine vision controllers. IC Role / Device Role / Timing Role: Burst-access SRAM serving as line buffer and frame store between image sensor interface and FPGA preprocessing pipeline. Use Value: 1M × 18 organization matches common 16-bit pixel bus widths; HSTL I/O ensures clean signal transitions over 10+ cm traces on industrial PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3652 | QDR-II+ architecture, 550 MHz max, 18-Mbit (512K × 36), no ODT, requires external termination | Lacks integrated ODT and echo clocks; demands tighter board-level timing control and more passive components | Select when legacy QDR-II+ ecosystem compatibility is required and board space permits external termination networks |
| ISSI IS61WV102418B | Asynchronous SRAM, 150 MHz max, 18-Mbit (1M × 18), no DDR, no burst, no ODT | Lower bandwidth, higher latency, simpler interface-suitable only for non-critical control-plane buffering | Choose only for cost-sensitive, low-speed applications where 1100 MT/s throughput and deterministic latency are unnecessary |
Compared with IDT72T3652 and IS61WV102418B, CY7C2168KV18 uniquely combines DDR II+ burst efficiency, on-die termination, and echo-clock–assisted timing-reducing system-level design risk in high-frequency packet and signal processing applications.
Availability
CY7C2168KV18 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and high-performance test equipment requiring stable component supply, long-lifecycle support, and guaranteed Pb-free transition path.
Supply support for CY7C2168KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level integration.
CY7C2168KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in FPGA- and ASIC-based communications infrastructure.
FAQ
What is the function of the DOFF pin on CY7C2168KV18?
The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle latency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This pin is sampled only at power-up and remains latched, allowing system-level optimization for either throughput (2.5-cycle) or minimal delay (1-cycle) without runtime reconfiguration.
How does the ZQ pin calibrate output impedance?
The ZQ pin connects to an external precision resistor (RQ) tied to ground. During initialization, the device measures RQ and sets its output driver and ODT impedance to exactly 0.2 × RQ. For example, a 200 Ω RQ yields 40 Ω output impedance. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and may cause undefined behavior.
Can CY7C2168KV18 operate with only one clock (K) instead of K and K?
No. The CY7C2168KV18 requires both complementary clocks K and K for correct DDR operation. K initiates all transactions and registers address/control signals, while both K and K register write data and drive read data. Omitting K violates timing specifications and prevents functional operation-no single-ended clock workaround exists in the architecture.
What is the purpose of the QVLD signal, and how is it timed?
QVLD (Valid Output Indicator) is a synchronous output that asserts precisely when DQ[17:0] carries valid read data. It is edge-aligned to both CQ and CQ echo clocks-not to K/K-ensuring zero-skew indication across all data bits. This eliminates timing margin uncertainty in FPGA capture logic and replaces manual delay-chain calibration with a hardware-synchronized validity flag.
CY7C2168KV18-550BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2168KV18-550BZC FAQ
1.How can I place an order for CY7C2168KV18-550BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2168KV18-550BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C2168KV18-550BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2168KV18-550BZC is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C2168KV18-550BZC?
For technical support, including CY7C2168KV18-550BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2168KV18-550BZC requirements.
6.How does Aetrix verify that CY7C2168KV18-550BZC is sourced from the original manufacturer or authorized distributors?
All CY7C2168KV18-550BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2168KV18-550BZC meets industry standards.
7.What is the process for return or replacement of CY7C2168KV18-550BZC?
All CY7C2168KV18-550BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2168KV18-550BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2168KV18-550BZC part is unused and in its original packaging.
Return procedure for CY7C2168KV18-550BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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