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Infineon Technologies CY7C2168KV18-550BZC

Part No.:
CY7C2168KV18-550BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2168KV18-550BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,465

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Product details

Overview

CY7C2168KV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency (when DOFF = HIGH), 550 MHz clock operation, and on-die termination (ODT) for D[x:0], BWS[x:0], and K/K inputs. It delivers 1100 MT/s data throughput via double-data-rate I/O and supports HSTL I/O with VDDQ = 1.4 V to 1.8 V, targeting high-bandwidth buffering in network packet processors and baseband subsystems.

For engineers reviewing the CY7C2168KV18 datasheet, CY7C2168KV18 pinout, CY7C2168KV18 application, or CY7C2168KV18 equivalent, key selection considerations include its 2.5-cycle vs. 1-cycle configurable read latency, echo-clock–synchronized QVLD timing, ODT impedance range selection via ODT pin, and FBGA-165 package compatibility with high-speed PCB routing constraints.

Technical Context

This SRAM implements a synchronous pipelined architecture where all address, control, and data signals are registered on rising edges of complementary clocks K and K. Read operations initiate on K's rising edge, with first data valid 2.5 cycles later-aligned to both K and K-and second word output on the subsequent K edge.

The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) phase-matched to K/K for simplified system-level data capture, and a ZQ-calibrated output driver network enabling 0.2 × RQ impedance tuning. ODT is programmable at power-up via the ODT pin to select low-range (RQ/3.33) or high-range (RQ/1.66) termination for inputs.

Key Specifications

ParameterValue and Actual Design Meaning
Density18 Mbit (1M × 18 configuration)
Max Clock Frequency550 MHz - enables 1100 MT/s DDR data rate
Read LatencyConfigurable: 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW)
I/O VoltageVDDQ = 1.4 V to 1.8 V - supports dual-voltage system interfacing
On-Die TerminationSupported on D[17:0], BWS[1:0], K, K - eliminates external resistors
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-pin-count, high-speed layout
Core SupplyVDD = 1.8 V ± 0.1 V - defines stable internal logic operation voltage

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant non-Pb-free construction.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data busTransfers 18-bit words on rising edges of K/K; tri-states automatically during deselect
K / KComplementary input clocksK rising edge initiates all accesses; both edges register write data and drive read data
CQ / CQSynchronous echo clocksFree-running, phase-aligned outputs that simplify high-speed data capture without board-level skew compensation
QVLDValid data indicatorEdge-aligned with CQ/CQ; asserts precisely when DQ[17:0] contains valid read data
ODTOn-die termination selectConfigures ODT resistance range at power-up: LOW → RQ/3.33 (175–350 Ω), HIGH → RQ/1.66 (175–250 Ω)
ZQImpedance calibration referenceConnects to external resistor to ground; sets output driver and ODT impedance to 0.2 × RQ
LDLoad strobeSampled on K rising edge; defines start of bus cycle containing address and R/W direction
BWS0, BWS1Byte write selectsActive-low controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write

Key Features

FeatureDesign Value
Two-word burst architectureReduces address bus toggling frequency by 50% versus single-word access, lowering EMI and routing congestion
Configurable 1- or 2.5-cycle read latencyDOFF pin selects between DDR I–compatible low-latency mode and DDR II+ high-throughput mode
Integrated echo clocks (CQ/CQ)Eliminates need for separate capture clocks per SRAM in multi-device systems, simplifying timing closure
HSTL-compatible I/O with variable drive strengthEnsures signal integrity at 1100 MT/s while supporting mixed-voltage backplane or ASIC interfaces
JTAG 1149.1 test access portEnables boundary-scan testing and in-system programming without dedicated debug headers

Applications

Network Packet BufferingBaseband Signal Processing

Use Scenario: Storing incoming/outgoing Ethernet or PCIe packets in telecom line cards requiring deterministic latency and zero wait-state burst reads.

IC Role / Device Role / Timing Role: High-speed shared-memory buffer interfaced to FPGA or ASIC fabric via DDR II+ bus with echo-clock–driven data capture.

Use Value: 2.5-cycle latency mode ensures predictable 5.45 ns (at 550 MHz) data availability window aligned to CQ/CQ, enabling lockstep processing across multiple channels.

Use Scenario: Real-time buffering of OFDM symbol streams in LTE/5G radio units before FFT/IFFT processing.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as ping-pong frame buffer between ADC/DAC interfaces and DSP cores.

Use Value: On-die termination eliminates 36 external 50 Ω resistors per device, reducing PCB area by >12 mm² and improving signal fidelity at 1100 MT/s.

High-Performance Test EquipmentIndustrial Vision Frame Storage

Use Scenario: Capturing high-resolution oscilloscope waveforms at multi-GS/s sampling rates for real-time analysis.

IC Role / Device Role / Timing Role: Low-jitter, pipeline-optimized memory staging raw ADC samples prior to compression or triggering logic.

Use Value: QVLD pin provides unambiguous, edge-aligned validity flag synchronized to echo clocks-removing setup/hold uncertainty in FPGA-based capture engines.

Use Scenario: Storing full HD (1920×1080) monochrome image frames at 120 fps in machine vision controllers.

IC Role / Device Role / Timing Role: Burst-access SRAM serving as line buffer and frame store between image sensor interface and FPGA preprocessing pipeline.

Use Value: 1M × 18 organization matches common 16-bit pixel bus widths; HSTL I/O ensures clean signal transitions over 10+ cm traces on industrial PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3652QDR-II+ architecture, 550 MHz max, 18-Mbit (512K × 36), no ODT, requires external terminationLacks integrated ODT and echo clocks; demands tighter board-level timing control and more passive componentsSelect when legacy QDR-II+ ecosystem compatibility is required and board space permits external termination networks
ISSI IS61WV102418BAsynchronous SRAM, 150 MHz max, 18-Mbit (1M × 18), no DDR, no burst, no ODTLower bandwidth, higher latency, simpler interface-suitable only for non-critical control-plane bufferingChoose only for cost-sensitive, low-speed applications where 1100 MT/s throughput and deterministic latency are unnecessary

Compared with IDT72T3652 and IS61WV102418B, CY7C2168KV18 uniquely combines DDR II+ burst efficiency, on-die termination, and echo-clock–assisted timing-reducing system-level design risk in high-frequency packet and signal processing applications.

Availability

CY7C2168KV18 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and high-performance test equipment requiring stable component supply, long-lifecycle support, and guaranteed Pb-free transition path.

Supply support for CY7C2168KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level integration.

CY7C2168KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in FPGA- and ASIC-based communications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C2168KV18?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle latency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This pin is sampled only at power-up and remains latched, allowing system-level optimization for either throughput (2.5-cycle) or minimal delay (1-cycle) without runtime reconfiguration.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to an external precision resistor (RQ) tied to ground. During initialization, the device measures RQ and sets its output driver and ODT impedance to exactly 0.2 × RQ. For example, a 200 Ω RQ yields 40 Ω output impedance. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and may cause undefined behavior.

Can CY7C2168KV18 operate with only one clock (K) instead of K and K?

No. The CY7C2168KV18 requires both complementary clocks K and K for correct DDR operation. K initiates all transactions and registers address/control signals, while both K and K register write data and drive read data. Omitting K violates timing specifications and prevents functional operation-no single-ended clock workaround exists in the architecture.

What is the purpose of the QVLD signal, and how is it timed?

QVLD (Valid Output Indicator) is a synchronous output that asserts precisely when DQ[17:0] carries valid read data. It is edge-aligned to both CQ and CQ echo clocks-not to K/K-ensuring zero-skew indication across all data bits. This eliminates timing margin uncertainty in FPGA capture logic and replaces manual delay-chain calibration with a hardware-synchronized validity flag.

CY7C2168KV18-550BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2168KV18-550BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2168KV18-550BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C2168KV18-550BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2168KV18-550BZC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C2168KV18-550BZC?

For technical support, including CY7C2168KV18-550BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2168KV18-550BZC requirements.

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All CY7C2168KV18-550BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2168KV18-550BZC meets industry standards.

7.What is the process for return or replacement of CY7C2168KV18-550BZC?

All CY7C2168KV18-550BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2168KV18-550BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2168KV18-550BZC part is unused and in its original packaging.

Return procedure for CY7C2168KV18-550BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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