Infineon Technologies CY7C2170KV18-400BZXC

Overview

CY7C2170KV18 from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 512K × 36, operating at 400 MHz with 2.5-cycle read latency and on-die termination (ODT) for DQ, BWS, and clock inputs. It uses dual-edge DDR I/O (1100 MT/s effective), HSTL-compatible interfaces, and echo clocks (CQ/CQ) for precise data capture in high-speed memory subsystems - deployed in network packet buffers and FPGA co-processor caches.

For engineers reviewing the CY7C2170KV18 datasheet, CY7C2170KV18 pinout, CY7C2170KV18 application, or CY7C2170KV18 equivalent, key selection criteria include its 512K × 36 organization, 400 MHz max clock frequency, ODT support with ZQ calibration, QVLD timing indicator, and FBGA-165 package compatibility with high-density PCB layouts.

Technical Context

This device implements a synchronous burst SRAM core with DDR II+ architecture: addresses are latched on alternate rising edges of K/K, while read data is driven on both K and K rising edges, delivering two sequential 36-bit words per access. The internal PLL ensures accurate data placement relative to echo clocks CQ/CQ, and DOFF pin selects between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes.

All synchronous I/O - including DQ[35:0], BWS[3:0], R/W, LD, and A[17:0] - are registered on K clock edges; write data is sampled on both K and K, and output drivers are impedance-tuned via ZQ pin to match system bus resistance. ODT supports programmable termination ranges (RQ/3.33 or RQ/1.66) based on ODT pin state during power-up initialization.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with IDT72T3652 and IS61WV102436B, CY7C2170KV18 delivers superior signal integrity via integrated ODT and deterministic timing via echo clocks - enabling reliable 400 MHz DDR operation in dense, multi-SRAM memory subsystems without layout compromises.

Availability

CY7C2170KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband memory applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for CY7C2170KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2170KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in FPGA- and ASIC-based networking and signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C2170KV18?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle latency; when LOW, the device operates in DDR I mode with 1-cycle latency. This pin is sampled during power-up initialization and remains static during normal operation - no runtime reconfiguration is supported.

How does ZQ calibration affect output drive strength?

ZQ calibration sets output driver impedance to 0.2 × RQ, where RQ is an external precision resistor (typically 240 Ω) tied between ZQ and ground. With RQ = 240 Ω, output impedance is fixed at 48 Ω, ensuring matched drive strength across all 36 DQ pins and eliminating inter-pin skew caused by mismatched drivers.

Can CY7C2170KV18 be used with a 1.5 V I/O supply?

Yes - VDDQ supports 1.4 V to 1.8 V, explicitly including 1.5 V operation. The device meets HSTL Class I specifications at 1.5 V, with guaranteed AC timing parameters and ODT functionality fully operational. No configuration changes or derating are required for 1.5 V use.

What is the purpose of the QVLD signal?

QVLD (Valid Output Indicator) asserts synchronously with the first valid 36-bit word on DQ[35:0], edge-aligned to CQ/CQ. It signals to the memory controller that data is stable and ready for sampling - eliminating need for fixed delay counters or eye-diagram margining in high-speed capture logic.