Infineon Technologies CY7C2170KV18-550BZXC

Overview

CY7C2170KV18 from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 512K × 36, operating at 550 MHz with 2.5-cycle read latency (DOFF = HIGH), HSTL I/O, and on-die termination (ODT) for D[x:0], BWS[x:0], and K/K inputs. It delivers 1100 MT/s data throughput via double-data-rate interface and supports 1.4 V to 1.8 V I/O supply (VDDQ), targeting high-bandwidth buffering in network packet processors and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C2170KV18 datasheet, CY7C2170KV18 pinout, CY7C2170KV18 application, or CY7C2170KV18 equivalent, key selection considerations include its 512K × 36 organization, 2.5-cycle vs. 1-cycle latency mode controlled by DOFF, echo clock (CQ/CQ)-synchronized data capture, QVLD validity indicator, and 165-ball FBGA package with ZQ impedance calibration.

Technical Context

This device implements a synchronous burst SRAM core with DDR II+ architecture, using dual input clocks (K and K) - both rising edges register write data and drive read data. Address latching occurs only on K's rising edge, while control signals (R/W, LD, BWS) are sampled synchronously on K.

The integrated PLL ensures precise data placement relative to echo clocks CQ/CQ, and ODT supports programmable termination ranges (RQ/3.33 or RQ/1.66) selected via the ODT pin. Core VDD is fixed at 1.8 V ± 0.1 V, while VDDQ is configurable between 1.4 V and 1.8 V to match system I/O voltage standards.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102436B, CY7C2170KV18 uniquely combines DDR II+ burst efficiency, on-die termination, and echo-clock–based data capture - delivering optimal balance of bandwidth, signal integrity, and timing predictability for new high-speed embedded memory subsystems.

Availability

CY7C2170KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor cache, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and RoHS-compliant Pb-free variants.

Supply support for CY7C2170KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2170KV18 belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in FPGA- and ASIC-based infrastructure equipment where DDR timing margins are constrained.

FAQ

What is the function of the DOFF pin on CY7C2170KV18?

The DOFF (Double-Word Off) pin selects read latency mode: when asserted HIGH, it enables 2.5-cycle DDR II+ latency for higher bandwidth; when LOW, it reverts to 1-cycle DDR I timing for controller compatibility. This is a static configuration pin sampled at power-up and must remain stable during operation to avoid undefined behavior.

How does ZQ calibration work with the CY7C2170KV18?

ZQ connects to a precision external resistor (typically 240 Ω) to ground; the device measures this resistance and configures all output drivers and ODT networks to 0.2 × RQ (e.g., 48 Ω). This calibration occurs automatically at power-up and ensures consistent impedance across voltage and temperature variations without manual tuning.

Can CY7C2170KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes - the datasheet explicitly supports VDDQ from 1.4 V to VDD (1.8 V), making 1.5 V operation fully compliant. This allows direct interfacing with 1.5 V FPGA I/O banks while maintaining 1.8 V core logic integrity, eliminating level shifters and simplifying power domain partitioning.

What is the purpose of the CQ and CQ echo clocks?

CQ and CQ are free-running output clocks synchronized to the input K clock, designed to clock receiving logic (e.g., FPGA IDELAY/ISERDES) for DQ[35:0]. Their edge alignment with valid data eliminates inter-symbol skew and removes the need for per-bit delay calibration - critical for reliable >500 MHz DDR capture without custom PHY design.