Infineon Technologies CY7C2245KV18-450BZXI
- Part No.:
- CY7C2245KV18-450BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2245KV18-450BZXI.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,708
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Product details
Overview
CY7C2245KV18-450BZXI from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ SRAM with separate read/write ports, 450 MHz clock frequency, 2.0-cycle read latency (DOFF = HIGH), on-die termination (ODT), and HSTL I/O interfaces. It delivers 900 MT/s data rate via DDR read/write ports in a 1M × 36 configuration and is used in high-bandwidth networking line cards and packet buffering systems.
For engineers reviewing the CY7C2245KV18-450BZXI datasheet, CY7C2245KV18-450BZXI pinout, CY7C2245KV18-450BZXI application, or CY7C2245KV18-450BZXI equivalent, key selection criteria include burst depth (four-word), ODT support for D/BWS/K inputs, echo clock (CQ/CQ) timing alignment, QVLD validity signaling, and 165-ball FBGA package compatibility with high-speed PCB routing constraints.
Technical Context
The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 18-bit address bus. Each port uses rising edges of complementary K/K clocks for DDR data transfer, enabling concurrent read and write operations without bus turnaround.
It integrates a PLL for precise data placement, supports programmable ODT ranges via ZQ/ODT pins, and provides edge-aligned QVLD to indicate valid output data synchronized to CQ/CQ echo clocks - critical for reliable capture in 900 MHz DDR systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s DDR throughput per port |
| Read Latency | 2.0 clock cycles (with DOFF = HIGH); 1.0 cycle (DOFF = LOW) |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V HSTL interfaces |
| Core Voltage | VDD = 1.8 V ± 0.1 V - defines stable internal SRAM operation margin |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external resistors for signal integrity |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density, low-inductance routing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous data input | Latched on rising edges of K/K; enables 36-bit parallel write transfers at 900 MT/s |
| Q[35:0] | Synchronous data output | DDR output driven on K/K rising edges; edge-aligned with QVLD and CQ/CQ for timing margin |
| RPS / WPS | Port select control | Active-low signals enabling independent read/write port activation and depth expansion |
| BWS[3:0] | Byte write select | Four independent 9-bit byte masks (D[8:0]–D[35:27]) for partial writes without read-modify-write |
| K / K | Differential clock inputs | Rising-edge-triggered clocks for all synchronous I/O; K drives read port, K drives write port |
| CQ / CQ | Echo clock outputs | Free-running, K/K-synchronized clocks for simplifying high-speed data capture in FPGA/ASIC receivers |
| QVLD | Valid data indicator | Output pulse aligned to CQ/CQ edges - directly gates data sampling in receiving logic |
| ODT / ZQ | ODT range control / impedance calibration | ODT selects RQ/3.33 (LOW) or RQ/1.66 (HIGH); ZQ sets output impedance to 0.2×RQ for bus matching |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround and contention - enables true concurrent access in packet buffer applications |
| Four-word burst architecture | Reduces effective address bus frequency by 4× - lowers routing complexity and timing closure burden |
| On-die termination (ODT) | Configurable termination for D/BWS/K inputs - removes 72+ external resistors and saves >120 mm² PCB area |
| Edge-aligned QVLD + CQ/CQ | Provides deterministic, jitter-tolerant data valid window - simplifies setup/hold timing in 900 MHz receivers |
| Programmable read latency | 2.0-cycle (DOFF = HIGH) or 1.0-cycle (DOFF = LOW) mode - allows trade-off between latency and bandwidth in system tuning |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Interface |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-in-first-out (FIFO) buffer with simultaneous ingress write and egress read. Use Value: Concurrent read/write eliminates arbitration delay; 900 MT/s bandwidth sustains 10 Gbps+ line-rate traffic with sub-10 ns latency. |
Use Scenario: Interfacing ASIC-based switch fabric controllers to external memory for header lookup and queue management. IC Role / Device Role / Timing Role: High-speed interface buffer synchronizing between asynchronous fabric clock domains using K/K and CQ/CQ. Use Value: Echo clocks and QVLD enable reliable data capture without complex deskew circuitry; ODT ensures clean signal integrity at 450 MHz. |
| Telecom Line Card Memory | Test Equipment Data Capture Buffer |
|
Use Scenario: Buffering real-time SONET/SDH or OTN frame payloads in optical transport modules. IC Role / Device Role / Timing Role: Burst-mode SRAM storing four consecutive 36-bit words per access to match framing structure. Use Value: Four-word burst reduces address transitions by 75%; 1.8 V core + 1.5 V I/O minimizes power vs. legacy QDR I devices. |
Use Scenario: Capturing high-speed serial data streams from DUTs in automated test equipment (ATE). IC Role / Device Role / Timing Role: Synchronous capture buffer accepting DDR data at 900 MT/s with precise QVLD-stamped validity windows. Use Value: Edge-aligned QVLD eliminates need for oversampling receivers; 165-ball FBGA allows dense, short-trace layout for <1 ps jitter tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2245KV18-400BZXI | 400 MHz max clock (vs. 450 MHz); identical pinout, latency, and feature set | Lower bandwidth requirement (720 MT/s vs. 900 MT/s); suitable for cost-sensitive 1–5 Gbps systems | Select when system timing margin allows relaxed clock speed and lower power consumption is prioritized |
| AS7C33640B-166BIN | Asynchronous SRAM; no DDR, no echo clocks, no ODT; 166 MHz max; 36-bit × 1M | Used in non-pipelined, low-latency control-plane buffers where concurrency is not required | Choose only for legacy designs lacking DDR infrastructure; not a functional replacement for QDR II+ timing architecture |
Compared with CY7C2245KV18-450BZXI, the -400BZXI offers identical functionality at reduced speed and power, while AS7C33640B-166BIN lacks concurrent access, DDR, and timing aids - making it unsuitable for high-throughput data-path buffering where QDR II+ architecture is essential.
Availability
CY7C2245KV18-450BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed switch fabric interface, and ATE data capture requiring stable component supply across long-lifecycle deployments.
Supply support for CY7C2245KV18-450BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and memory solutions with strong focus on reliability and industrial longevity.
This device belongs to Infineon's QDR® II+ SRAM product line, designed specifically for high-bandwidth, low-latency data-path buffering in networking, telecom, and test equipment where concurrent read/write and deterministic timing are mandatory.
FAQ
What is the function of the DOFF pin on CY7C2245KV18-450BZXI?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 2.0-cycle read latency consistent with QDR II+ specification; when LOW or tied to VSS, the device operates in QDR I mode with 1.0-cycle latency. This pin is sampled at power-up and remains latched during operation - no runtime reconfiguration is supported.
How does on-die termination (ODT) work on this SRAM?
ODT applies programmable termination resistance to D[35:0], BWS[3:0], and K/K inputs using an external resistor (RQ) connected to the ZQ pin. ODT pin state selects termination range: LOW → RQ/3.33 (175–350 Ω), HIGH → RQ/1.66 (175–250 Ω). This eliminates discrete termination resistors and improves signal integrity at 450 MHz without board-level tuning.
Can CY7C2245KV18-450BZXI operate with 1.5 V VDDQ?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. HSTL-compatible I/O buffers are fully characterized at 1.5 V, enabling interoperability with 1.5 V FPGA I/O banks while maintaining full 450 MHz performance and timing margins per datasheet AC specifications.
What is the purpose of CQ and CQ echo clocks?
CQ and CQ are free-running, K/K-synchronized output clocks provided to simplify data capture in high-speed receivers. They replicate the phase and jitter profile of the input clocks, allowing the receiving device to sample Q[35:0] and QVLD using locally generated clocks - eliminating skew between clock and data paths and relaxing PCB routing constraints in 900 MT/s systems.
CY7C2245KV18-450BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2245KV18-450BZXI FAQ
1.How can I place an order for CY7C2245KV18-450BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2245KV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2245KV18-450BZXI reliable?
The price and inventory of CY7C2245KV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2245KV18-450BZXI is usually 5 days.
3.What payment methods are accepted for CY7C2245KV18-450BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2245KV18-450BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C2245KV18-450BZXI?
CY7C2245KV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2245KV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2245KV18-450BZXI?
For technical support, including CY7C2245KV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2245KV18-450BZXI requirements.
6.How does Aetrix verify that CY7C2245KV18-450BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C2245KV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2245KV18-450BZXI meets industry standards.
7.What is the process for return or replacement of CY7C2245KV18-450BZXI?
All CY7C2245KV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2245KV18-450BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2245KV18-450BZXI part is unused and in its original packaging.
Return procedure for CY7C2245KV18-450BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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