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Infineon Technologies CY7C2263KV18-450BZXI

Part No.:
CY7C2263KV18-450BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2263KV18-450BZXI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:331

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Product details

Overview

CY7C2263KV18 from Cypress Semiconductor is a 36-Mbit QDR® II+ SRAM with 2 M × 18 organization, 550 MHz clock capability, 2.5-cycle read latency, and on-die termination (ODT) supporting D[17:0], BWS[1:0], and K/K inputs. It delivers 1100 MT/s DDR throughput on separate read/write ports for high-bandwidth networking buffers and packet memory in telecom line cards.

For engineers reviewing the CY7C2263KV18 datasheet, CY7C2263KV18 pinout, CY7C2263KV18 application, or CY7C2263KV18 equivalent, key selection criteria include its 165-ball FBGA package, HSTL I/O compatibility with 1.4–1.8 V VDDQ, echo clocks (CQ/CQ) for timing margin, QVLD data validity signaling, and DOFF-configurable 1-cycle vs. 2.5-cycle latency modes.

Technical Context

This SRAM implements true dual-port QDR II+ architecture with physically independent read and write data paths-no bus turnaround required. Its pipelined synchronous design uses rising edges of both K and K clocks to latch addresses and transfer data, enabling concurrent read and write operations at full bandwidth.

The device integrates a PLL for precise data placement, supports depth expansion via RPS/WPS controls, and features programmable ODT with ZQ calibration for impedance matching. Echo clocks CQ and CQ are free-running and edge-aligned with K/K to simplify high-speed capture in FPGA- or ASIC-based systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 organization)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR data rate on both ports
Read Latency Configurable: 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW)
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration
Interface Standard HSTL Class I inputs, variable-drive HSTL outputs - compatible with FPGA/ASIC memory controllers requiring stub-series terminated logic
On-Die Termination Supported on D[17:0], BWS[1:0], K, K - eliminates external resistors, reduces PCB routing complexity and board area
Package 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-density memory subsystems

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Data input bus Synchronous write data sampled on rising edges of K/K; supports byte-write masking via BWS0/BWS1
Q[17:0] Data output bus Synchronous read data driven on rising edges of K/K; tri-stated when RPS is deasserted
RPS / WPS Port select controls Active-low signals enabling independent read/write port activation; essential for depth expansion and port arbitration
BWS[1:0] Byte write select Active-low per-byte enable: BWS0 → D[8:0], BWS1 → D[17:9]; preserves unmasked bytes during partial writes
K / K Differential clock inputs Rising-edge-triggered clocks for all synchronous operations; K used for address/data latching, K for complementary timing
CQ / CQ Echo clock outputs Free-running, edge-aligned copies of K/K; used by receiving logic to sample Q[17:0] with deterministic setup/hold margins
QVLD Valid data indicator Asserted synchronously with CQ/CQ to signal presence of valid read data on Q[17:0]; eliminates need for fixed delay assumptions
ODT On-die termination control Selects ODT range (LOW = RQ/3.33, HIGH = RQ/1.66); default HIGH if floating - enables impedance tuning without external resistors
ZQ Impedance calibration reference Connected to precision resistor to ground (175–350 Ω); sets output driver and ODT impedance to 0.2 × RQ
DOFF Latency mode select HIGH → 2.5-cycle read latency (QDR II+ mode); LOW → 1-cycle latency (QDR I compatibility mode)

Key Features

Feature Design Value
Separate read/write data ports Enables true concurrent transactions without bus contention or turnaround cycles - critical for real-time packet buffering
Four-word burst architecture Reduces effective address bus frequency by 4× - lowers routing complexity and timing closure burden on controller side
Programmable 2.5/1-cycle read latency DOFF pin allows runtime selection between QDR II+ performance and QDR I legacy compatibility - simplifies migration paths
HSTL I/O with variable drive strength Meets JEDEC HSTL Class I specs while allowing drive adjustment via VDDQ scaling - improves signal integrity across voltage corners
JTAG 1149.1 boundary scan Enables production testability and interconnect verification without additional test fixtures - reduces manufacturing test cost

Applications

High-Speed Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in 10G/40G switch fabric ASICs.

IC Role / Device Role / Timing Role: Dedicated burst-access SRAM serving as ingress/egress FIFO with zero-turnaround read/write concurrency.

Use Value: 1100 MT/s DDR bandwidth and 2.5-cycle latency ensure sub-100 ns access to next packet header - enabling wire-speed classification.

Use Scenario: Buffering time-division multiplexed (TDM) voice channels and control plane messages in carrier-grade DSLAMs.

IC Role / Device Role / Timing Role: Synchronous pipelined memory interfacing directly with TI C64x+ DSP or Xilinx Ultrascale+ GTY transceivers.

Use Value: Echo clocks CQ/CQ and QVLD eliminate static timing analysis uncertainty - reducing design iteration cycles for <1 ps jitter budgets.

Baseband Processing Memory FPGA-Based Protocol Accelerator

Use Scenario: Holding channel estimation coefficients and FFT output buffers in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency, high-throughput memory co-located with FPGA-based MAC/PHY logic for real-time symbol processing.

Use Value: On-die termination (ODT) on D[17:0] and K/K eliminates 36+ external 50 Ω resistors - cutting BOM cost and improving SI margin at 550 MHz.

Use Scenario: Offloading TCP/IP checksum, TLS encryption, and packet reassembly from host CPU in smart NICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared work queue and result store between ARM cores and hardened crypto engines.

Use Value: Independent RPS/WPS enables lock-free producer-consumer synchronization - avoiding software mutex overhead in multi-threaded firmware.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-Mbit QDR II+, 1000 MHz interface (500 MHz clock), no ODT, 165-ball FBGA, 1.8 V only Lacks ODT and ZQ calibration; requires external termination; higher clock speed but tighter timing margins Preferred where maximum bandwidth is prioritized over board-level simplicity and impedance tuning flexibility
ISSI IS61WV102418BLL-10BLI 18-Mbit sync SRAM, single-port, 10 ns async access, no DDR, no burst, SOJ-54 package Lower density, no QDR architecture, no echo clocks or QVLD - incompatible for concurrent read/write use cases Only suitable for legacy designs requiring pin-compatible replacement of older async SRAMs, not QDR II+ functional equivalents

Compared with IDT72T3615L10PA, CY7C2263KV18 trades 50 MHz clock headroom for integrated ODT and ZQ calibration - reducing PCB layer count and validation effort. Versus IS61WV102418BLL-10BLI, it provides true dual-port concurrency and burst efficiency, making it unsuitable as a drop-in replacement but essential for modern high-throughput memory subsystems.

Availability

CY7C2263KV18 is available at Aetrix Electronics and suitable for high-speed network packet buffer, telecom line card memory, and FPGA-based protocol accelerator applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CY7C2263KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2263KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory subsystems in networking infrastructure, baseband processing, and FPGA acceleration platforms.

FAQ

What is the function of the DOFF pin on CY7C2263KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables QDR II+ operation with 2.5-cycle read latency; when LOW, it reverts to QDR I compatibility mode with 1-cycle latency. This pin is sampled at power-up and remains latched until reset, allowing hardware-selectable performance versus legacy interoperability.

How does on-die termination (ODT) work on CY7C2263KV18?

ODT is enabled on D[17:0], BWS[1:0], and K/K inputs using the ODT pin and ZQ calibration resistor. ODT pin state selects termination range (RQ/3.33 or RQ/1.66), while ZQ sets actual impedance to 0.2 × RQ. This eliminates external 50 Ω resistors, reduces PCB space, and improves signal integrity at 550 MHz without sacrificing timing margin.

Can CY7C2263KV18 be used with a 1.5 V VDDQ supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V operation. HSTL I/O buffers are designed for this range, and DC/AC specifications (including setup/hold times and drive strength) are guaranteed across the full 1.4–1.8 V window per the datasheet's electrical characteristics table.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, edge-aligned copies of the K and K input clocks, respectively. They provide deterministic timing references for capturing Q[17:0] output data, eliminating the need for complex phase alignment or delay-locked loops in the receiving logic - especially valuable in FPGA-based systems where clock tree skew is difficult to control.

CY7C2263KV18-450BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2263KV18-450BZXI FAQ

1.How can I place an order for CY7C2263KV18-450BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2263KV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2263KV18-450BZXI reliable?

The price and inventory of CY7C2263KV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2263KV18-450BZXI is usually 5 days.

3.What payment methods are accepted for CY7C2263KV18-450BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2263KV18-450BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2263KV18-450BZXI?

CY7C2263KV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2263KV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2263KV18-450BZXI?

For technical support, including CY7C2263KV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2263KV18-450BZXI requirements.

6.How does Aetrix verify that CY7C2263KV18-450BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C2263KV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2263KV18-450BZXI meets industry standards.

7.What is the process for return or replacement of CY7C2263KV18-450BZXI?

All CY7C2263KV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2263KV18-450BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2263KV18-450BZXI part is unused and in its original packaging.

Return procedure for CY7C2263KV18-450BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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