Infineon Technologies CY7C2263KV18-550BZXC
- Part No.:
- CY7C2263KV18-550BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2263KV18-550BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:320
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Product details
Overview
CY7C2263KV18 from Cypress Semiconductor is a 36-Mbit QDR® II+ SRAM with 2 M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT). It implements separate read/write ports with DDR interfaces (1100 MT/s effective data rate), HSTL I/O, and echo clocks (CQ/CQ) for precise high-speed data capture in networking and packet buffering systems.
For engineers reviewing the CY7C2263KV18 datasheet, CY7C2263KV18 pinout, CY7C2263KV18 application, or CY7C2263KV18 equivalent, key selection criteria include its 550 MHz operation, 2.5-cycle latency mode (DOFF = HIGH), 165-ball FBGA package, ODT support on D[17:0]/BWS[1:0]/K/K, and synchronous self-timed writes.
Technical Context
The CY7C2263KV18 uses a four-word burst architecture with independent read and write ports, eliminating bus turnaround. Its dual-clock DDR interface (K and K) enables concurrent read/write operations at 550 MHz, delivering 1100 MT/s per port while maintaining full data coherency across all bursts.
A phase-locked loop (PLL) ensures accurate data placement relative to echo clocks CQ and CQ. The device supports two latency modes: 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW), with ODT configurable via ZQ resistor and ODT pin for D[17:0], BWS[1:0], and K/K inputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2 M × 18 organization) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR throughput per port |
| Read Latency | 2.5 cycles (with DOFF = HIGH) - balances speed and timing margin in high-bandwidth pipelines |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V system I/O rails |
| Core Voltage | VDD = 1.8 V ± 0.1 V - defines stable internal SRAM array operation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in dense PCB layouts |
| Termination | On-die termination (ODT) on D[17:0], BWS[1:0], K/K - eliminates external resistors and simplifies routing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Data input bus | Synchronous write data sampled on rising edges of K/K; supports byte-write via BWS[1:0] |
| Q[17:0] | Data output bus | Synchronous read data driven on rising edges of K/K; tri-stated when RPS deasserted |
| RPS | Read port select | Active-low signal initiating read burst; sampled on rising edge of K |
| WPS | Write port select | Active-low signal initiating write burst; sampled on rising edge of K |
| BWS[1:0] | Byte write select | Active-low controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes |
| K / K | Input clocks | Dual-phase clocks driving all synchronous inputs/outputs; only rising edges used |
| CQ / CQ | Echo clocks | Free-running outputs synchronized to K/K; simplify timing closure for DDR data capture |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ; signals validity of Q[17:0] during read bursts |
| ODT | On-die termination control | Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); default HIGH if floating |
| ZQ | Impedance calibration reference | Connects to external resistor to ground; sets output impedance to 0.2 × RQ for CQ/CQ/Q[17:0] |
| DOFF | Latency mode select | HIGH enables 2.5-cycle read latency; LOW reverts to 1-cycle QDR I compatibility |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent transactions without bus contention or turnaround delay |
| Four-word burst architecture | Reduces address bus frequency by 4× versus single-word access, lowering routing complexity |
| On-die termination (ODT) | Eliminates 36 external termination resistors for D[17:0], BWS[1:0], and K/K, saving board area and cost |
| Echo clocks CQ/CQ | Provide deterministic, low-skew timing references for source-synchronous DDR data capture |
| Programmable latency mode | DOFF pin selects between 2.5-cycle (high-performance) and 1-cycle (legacy-compatible) read latency |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet packets in line-rate switching ASICs. IC Role / Device Role / Timing Role: Dedicated QDR II+ SRAM acting as ingress/egress buffer with concurrent read/write capability. Use Value: 550 MHz clock and 2.5-cycle latency enable sustained 1100 MT/s throughput per port, matching 10G/25G line rates without bottleneck. |
Use Scenario: Serving as shared memory for crossbar arbitration logic in multi-port enterprise switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory node interfacing with multiple parallel datapaths. Use Value: Separate read/write ports eliminate arbitration overhead, allowing simultaneous packet header lookup (read) and payload write. |
| Telecom Baseband Processing | Test Equipment Data Capture |
|
Use Scenario: Real-time buffering of IQ samples between RF front-end and digital baseband processors in 4G/5G radios. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing deterministic latency for time-critical sample streaming. Use Value: Echo clocks CQ/CQ align precisely with data edges, enabling reliable capture at 1100 MT/s without complex deskew circuitry. |
Use Scenario: Capturing high-speed serial data streams from DUTs in automated test systems with real-time analysis. IC Role / Device Role / Timing Role: Burst-mode memory staging raw waveform data before compression or FFT processing. Use Value: On-die termination and HSTL I/O ensure signal integrity at 550 MHz, reducing bit errors in multi-GHz acquisition paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+, 1000 MHz max clock, 2.5-cycle latency, 165-ball FBGA, but requires 1.5 V VDDQ only | Higher clock ceiling but narrower I/O voltage range; lacks DOFF-configurable latency mode | Prefer when system demands >550 MHz operation and VDDQ is fixed at 1.5 V |
| ISSI IS61WV102418B | 18-Mbit sync SRAM, 250 MHz max, single-port, no ODT or echo clocks, SOJ-54 package | Lower density, half bandwidth, no burst or DDR; suitable only for non-concurrent, lower-speed buffering | Consider only for cost-sensitive, non-packetized legacy designs where QDR features are unused |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C2263KV18 uniquely combines 550 MHz operation, programmable 2.5/1-cycle latency, ODT, and echo clocks in a 165-ball FBGA-making it optimal for new high-speed networking designs requiring timing flexibility and signal integrity.
Availability
CY7C2263KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and test equipment data capture requiring stable component supply and long-term industrial availability.
Supply support for CY7C2263KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C2263KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for high-bandwidth, low-latency data buffering in networking infrastructure and telecom equipment where concurrent read/write and precise timing are critical.
FAQ
What is the function of the DOFF pin on CY7C2263KV18?
The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for maximum bandwidth; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I systems. This pin is sampled at power-up and remains static during operation, allowing system-level optimization of timing margins versus throughput.
How does on-die termination (ODT) work on CY7C2263KV18?
ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor. The ODT pin selects between two ranges: LOW sets termination to RQ/3.33 (175–350 Ω), HIGH sets it to RQ/1.66 (175–250 Ω). This eliminates discrete termination components, reduces PCB layer count, and improves signal integrity at 550 MHz.
Can CY7C2263KV18 operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. This allows interoperability with 1.5 V I/O standards such as HSTL Class I, while maintaining full 550 MHz performance and 2.5-cycle latency functionality as specified in the datasheet.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, source-synchronous output clocks aligned to K and K respectively. They provide low-jitter timing references for capturing Q[17:0] data, eliminating the need for complex PLL-based clock recovery or manual deskew in FPGA or ASIC receivers. Their phase relationship is guaranteed per AC specifications, enabling robust 1100 MT/s DDR data capture.
CY7C2263KV18-550BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2263KV18-550BZXC FAQ
1.How can I place an order for CY7C2263KV18-550BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2263KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2263KV18-550BZXC reliable?
The price and inventory of CY7C2263KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2263KV18-550BZXC is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2263KV18-550BZXC transactions.
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CY7C2263KV18-550BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2263KV18-550BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2263KV18-550BZXC?
For technical support, including CY7C2263KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2263KV18-550BZXC requirements.
6.How does Aetrix verify that CY7C2263KV18-550BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2263KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2263KV18-550BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2263KV18-550BZXC?
All CY7C2263KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2263KV18-550BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2263KV18-550BZXC part is unused and in its original packaging.
Return procedure for CY7C2263KV18-550BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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