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Infineon Technologies CY7C2263KV18-550BZXI

Part No.:
CY7C2263KV18-550BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2263KV18-550BZXI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,229

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Product details

Overview

CY7C2263KV18 from Cypress Semiconductor is a 36-Mbit QDR® II+ SRAM with 2 M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[17:0], BWS[1:0], and K/K inputs. It features separate read/write DDR ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and operates at core VDD = 1.8 V ± 0.1 V with I/O VDDQ = 1.4–1.8 V - deployed in high-bandwidth network packet buffering and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C2263KV18 datasheet, CY7C2263KV18 pinout, CY7C2263KV18 application, or CY7C2263KV18 equivalent, key selection criteria include its 1100 MT/s effective data rate, FBGA-165 package compatibility, HSTL I/O interface, DOFF-configurable latency mode, and JTAG 1149.1 test access support for production validation and system-level timing closure.

Technical Context

The CY7C2263KV18 implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 19-bit address bus. Each port uses DDR interfaces synchronized to complementary K/K clocks, enabling concurrent read and write operations without bus turnaround.

It integrates a PLL for precise data placement, echo clocks (CQ/CQ) aligned to K/K for simplified high-speed capture, and programmable ODT with dual-range selection via ODT pin tied to ZQ resistor. The device supports depth expansion via RPS/WPS controls and byte-write masking via BWS[1:0] for partial-word updates.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 configuration)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR data transfer on both ports
Read Latency 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable for timing-critical vs. legacy compatibility
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration
ODT Support On-die termination for D[17:0], BWS[1:0], K/K - eliminates external resistors, reduces PCB area and routing complexity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-pin-count high-speed memory
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 550 MHz operation

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous data input 18-bit write data bus sampled on rising edges of K/K; supports partial writes via BWS[1:0]
Q[17:0] Synchronous data output 18-bit read data bus driven on rising edges of K/K; tri-stated when RPS is deasserted
RPS / WPS Port select control Active-low signals enabling independent read/write port activation for depth expansion
BWS[1:0] Byte write select Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); enables 9-bit granularity writes
K / K Differential clock inputs Complementary clocks driving all synchronous inputs/outputs; only rising edges used for sampling
CQ / CQ Echo clock outputs Free-running clocks synchronized to K/K - used for source-synchronous data capture in FPGA/ASIC receivers
QVLD Data validity indicator Output pulse edge-aligned with CQ/CQ - signals when Q[17:0] contains valid burst data
ODT ODT range select Configures termination resistance: LOW → RQ/3.33 (~175–350 Ω), HIGH/floating → RQ/1.66 (~175–250 Ω)
ZQ Impedance calibration reference Connects to external resistor to ground; sets output impedance of Q[17:0], CQ, CQ to 0.2 × RQ
DOFF Latency mode control HIGH → 2.5-cycle read latency (QDR II+ mode); LOW → 1-cycle latency (QDR I compatibility mode)

Key Features

Feature Design Value
Separate read/write DDR ports Enables true concurrent transactions - no bus turnaround required, doubling effective bandwidth over single-port SRAMs
Four-word burst architecture Transfers 4 × 18-bit words per address access - reduces address bus toggling by 75% versus single-word devices
Programmable ODT with ZQ calibration Eliminates need for 18 external termination resistors on data/control lines - saves >25 mm² PCB area and simplifies layout
DOFF-selectable latency mode Supports migration from legacy QDR I systems (1-cycle) while enabling higher throughput in new designs (2.5-cycle)
JTAG 1149.1 boundary scan Enables automated PCB test, interconnect verification, and in-system programming without additional test fixtures

Applications

Network Packet Buffering FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory between MAC and traffic manager ASICs using separate read/write ports.

Use Value: 1100 MT/s DDR bandwidth and 2.5-cycle latency enable real-time packet classification without pipeline stalls.

Use Scenario: Serving as scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based acceleration engines processing radar or video streams.

IC Role / Device Role / Timing Role: Burst-accessed local memory interfaced via dedicated AXI-MM or native parallel bus with echo-clock–synchronized capture.

Use Value: CQ/CQ echo clocks align with FPGA IDELAYCTRL inputs, reducing setup/hold margin requirements by ≥150 ps.

Telecom Baseband Processing High-Speed Test Equipment Memory

Use Scenario: Buffering channelized IQ samples between ADC/DAC and DSP cores in 5G massive MIMO radio units.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM with independent read/write ports handling interleaved uplink/downlink sample bursts.

Use Value: On-die termination and HSTL I/O ensure signal integrity across 15 cm backplane traces at 550 MHz clock rates.

Use Scenario: Capturing high-fidelity waveform data in automated test equipment (ATE) with sub-nanosecond timestamp resolution.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-latency memory staging buffer feeding pattern generators or digitizers via parallel bus.

Use Value: QVLD output provides unambiguous strobe for timestamp alignment - eliminating software polling or FIFO uncertainty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L5PF 36-Mbit (2 M × 18), 500 MHz max, 2.5-cycle latency, but lacks ODT and ZQ calibration; uses SSTL-15 I/O Requires external termination resistors and tighter VDDQ tolerance (1.45–1.55 V); less suitable for compact, high-density layouts Select when legacy SSTL-15 infrastructure exists and board space permits external termination networks
ISSI IS61WV204818BLL-10BLI 36-Mbit (2 M × 18), 10 ns async access, no DDR, no ODT, no echo clocks - asynchronous SRAM with 10 ns access time Cannot support concurrent read/write or burst transfers; limited to ≤200 MHz effective bandwidth in pipelined systems Select only for cost-sensitive, non-burst, low-bandwidth control-plane buffers where timing predictability outweighs throughput

Compared with IDT72T3615L5PF and IS61WV204818BLL-10BLI, the CY7C2263KV18 delivers 10% higher clock rate, integrated ODT/ZQ, echo clocks for timing margin recovery, and true concurrent port operation - making it uniquely suited for next-generation packet-processing and FPGA-accelerated systems requiring deterministic high bandwidth.

Availability

CY7C2263KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor cache, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for CY7C2263KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The CY7C2263KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory interfacing in packet-switched infrastructure and FPGA-based accelerators.

FAQ

What is the function of the DOFF pin on CY7C2263KV18?

The DOFF (Delay OFF) pin selects read latency mode: when asserted HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency for maximum bandwidth; when LOW, it reverts to QDR I–compatible 1-cycle latency. This allows seamless integration into existing designs while enabling performance upgrades in new systems without changing PCB layout or timing constraints.

How does on-die termination (ODT) work on CY7C2263KV18?

ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. When ODT is active, internal termination resistors match the system data bus impedance - supporting D[17:0], BWS[1:0], and K/K inputs. Two ODT ranges are selectable: LOW (RQ/3.33) for wider impedance range (175–350 Ω), HIGH/floating (RQ/1.66) for tighter range (175–250 Ω), eliminating 18 external resistors and associated PCB area.

Can CY7C2263KV18 be used with a 1.5 V VDDQ supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. Electrical characteristics such as setup/hold times and output drive strength are guaranteed across this full range per the datasheet's DC specifications. No configuration changes or derating are required when operating at 1.5 V VDDQ, making it compatible with mixed-voltage FPGA I/O banks.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, source-synchronous echo clocks derived from K and K respectively. They are edge-aligned with Q[17:0] output data and used by receiving logic (e.g., FPGA input registers) to capture data with minimal skew. Unlike forwarded clocks in SerDes, they require no PLL lock time and provide deterministic phase relationship - critical for meeting tight setup/hold windows at 550 MHz clock rates.

CY7C2263KV18-550BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2263KV18-550BZXI FAQ

1.How can I place an order for CY7C2263KV18-550BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2263KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2263KV18-550BZXI reliable?

The price and inventory of CY7C2263KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2263KV18-550BZXI is usually 5 days.

3.What payment methods are accepted for CY7C2263KV18-550BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2263KV18-550BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2263KV18-550BZXI?

CY7C2263KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2263KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2263KV18-550BZXI?

For technical support, including CY7C2263KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2263KV18-550BZXI requirements.

6.How does Aetrix verify that CY7C2263KV18-550BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C2263KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2263KV18-550BZXI meets industry standards.

7.What is the process for return or replacement of CY7C2263KV18-550BZXI?

All CY7C2263KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2263KV18-550BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2263KV18-550BZXI part is unused and in its original packaging.

Return procedure for CY7C2263KV18-550BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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