Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C2265KV18-550BZXC

Part No.:
CY7C2265KV18-550BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2265KV18-550BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,152

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C2265KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II+ SRAM with 2.5-cycle read latency, 550 MHz clock frequency, DDR interfaces on both ports (1100 MT/s effective data rate), and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards and switch fabric controllers.

For engineers reviewing the CY7C2265KV18 datasheet, CY7C2265KV18 pinout, CY7C2265KV18 application, or CY7C2265KV18 equivalent, key selection criteria include its 1.8 V core / 1.4–1.8 V I/O supply support, HSTL-compatible interfaces, echo clocks (CQ/CQ) for timing margin improvement, and JTAG 1149.1 test access port for production validation.

Technical Context

The CY7C2265KV18 implements a true dual-port synchronous architecture with physically separate read and write data paths-enabling concurrent read/write operations without bus turnaround. Its 256K × 36 memory array is accessed via a shared 18-bit multiplexed address bus latched on alternating edges of K and K clocks.

It integrates a PLL for precise data placement, supports programmable ODT impedance ranges (RQ/1.66 or RQ/3.33) via the ODT pin, and uses echo clocks CQ/CQ aligned to output data edges to simplify high-speed capture at 1100 MT/s. The QVLD signal provides edge-aligned valid-data indication synchronized to CQ/CQ.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1 M × 36 organization)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR data transfer on both ports
Read Latency 2.5 cycles - fixed pipeline delay from address latch to first valid Q[35:0] output
Core Supply VDD = 1.8 V ± 0.1 V - defines internal logic voltage and timing reference
I/O Supply Range VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system buses
On-Die Termination Supported on D[35:0], BWS[3:0], K/K - eliminates external resistors for signal integrity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Write data input bus 36-bit synchronous input sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Read data output bus 36-bit synchronous output driven on rising edges of K/K; tri-stated when RPS is deasserted
RPS Read port select Active-LOW signal sampled on rising edge of K; initiates 4-word burst read sequence
WPS Write port select Active-LOW signal sampled on rising edge of K; enables write operation and data latching
BWS[3:0] Byte write select Four independent active-LOW signals controlling 9-bit byte lanes (D[8:0] to D[35:27])
K / K Differential clock inputs Single-ended clock pair; rising edges control all synchronous inputs/outputs; K used for RPS/WPS sampling
CQ / CQ Echo clock outputs Free-running clocks synchronized to K/K; edge-aligned with Q[35:0] and QVLD for reliable capture
QVLD Valid data indicator Output pulse edge-aligned with CQ/CQ; asserts for duration of each valid 36-bit word in burst
ODT On-die termination control Configures ODT range at power-up: LOW = RQ/3.33 (~175–350 Ω), HIGH = RQ/1.66 (~175–250 Ω)
ZQ Impedance calibration reference Connects to external resistor to ground; sets output driver impedance to 0.2 × RQ for CQ/CQ/Q[35:0]

Key Features

Feature Design Value
Separate read/write ports Enables simultaneous read and write transactions without arbitration or bus contention
Four-word burst architecture Reduces address bus toggling frequency by 4× versus single-word access at same throughput
HSTL I/O with variable drive Ensures signal integrity at 1100 MT/s while supporting 1.5 V or 1.8 V system interface levels
JTAG 1149.1 test access port Enables boundary-scan testing and in-system verification without additional test fixtures
Synchronous self-timed writes Eliminates external write-enable timing constraints; internal logic manages write completion

Applications

Network Switch Fabric Buffering High-Speed Packet Processing Engine

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as low-latency, concurrent-access buffer between ingress parser and egress scheduler logic.

Use Value: 2.5-cycle read latency and 550 MHz clock enable real-time header lookup and modification at line rate without pipeline stalls.

Use Scenario: Temporary storage of fragmented IP packets during reassembly in DPI or firewall ASICs.

IC Role / Device Role / Timing Role: High-bandwidth memory buffer interfacing with parallel processing pipelines using HSTL I/O.

Use Value: Four-word burst + DDR I/O delivers 7.92 GB/s aggregate bandwidth (1100 MT/s × 36 bits), matching multi-core packet engine throughput.

Telecom Line Card Control Memory Test Equipment Pattern Memory

Use Scenario: Holding configuration tables and real-time statistics in OTN or CPRI framer modules.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic access for control-plane updates and status reads.

Use Value: On-die termination and echo clocks (CQ/CQ) reduce PCB routing complexity and improve timing margin at 550 MHz operation.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Burst-mode memory delivering precise, jitter-free data sequences synchronized to system clock.

Use Value: QVLD signal provides unambiguous data-valid timing for sub-nanosecond capture windows in high-speed ATE systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615 36-Mbit QDR II+, 550 MHz, but uses 1.5 V core (VDD = 1.5 V); no DOFF pin for latency mode selection Lacks 2.5/1-cycle latency toggle (DOFF); requires fixed 2.5-cycle latency; different ODT implementation Select when legacy 1.5 V core infrastructure exists and latency flexibility is not required.
ISSI IS61WV102436B 36-Mbit QDR II+, 500 MHz max; no echo clocks (CQ/CQ); no JTAG TAP; ODT only on D-bus Lower max frequency reduces peak bandwidth; absence of echo clocks increases timing closure effort Select for cost-sensitive designs where 500 MHz bandwidth suffices and JTAG test is not mandatory.

Compared with IDT72T3615 and IS61WV102436B, CY7C2265KV18 offers unique DOFF-configurable latency, full-pin ODT coverage, and integrated echo clocks-making it optimal for new designs requiring timing margin, testability, and flexible latency modes.

Availability

CY7C2265KV18 is available at Aetrix Electronics and suitable for network switch fabric buffering, high-speed packet processing engines, and telecom line card control memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C2265KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2265KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in networking and test equipment where concurrent read/write bandwidth and timing precision are critical.

FAQ

What is the function of the DOFF pin on CY7C2265KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, the device operates with 2.5-cycle read latency; when asserted LOW, it reverts to 1-cycle latency like QDR I. This allows system-level optimization of timing margin versus latency trade-offs without hardware changes.

How does the ZQ pin affect output driver impedance?

The ZQ pin connects to an external resistor to ground (RQ), calibrating output driver impedance to 0.2 × RQ for Q[35:0], CQ, and CQ. If tied directly to VDDQ, minimum impedance mode activates. ZQ must never be left floating or connected to GND, as that disables calibration and risks signal integrity failure.

Can CY7C2265KV18 operate with only one clock input (K) instead of K/K differential pair?

No. The device requires both K and K inputs for proper DDR timing: K controls read port timing and RPS/WPS sampling, while K controls write data and BWS sampling. Using only K violates AC timing specifications and causes undefined behavior in burst sequencing and echo clock generation.

Is the CY7C2265KV18 pin-compatible with CY7C2263KV18?

No. Although both use the same 165-ball FBGA package, their pinouts differ significantly: CY7C2263KV18 (2 M × 18) has 19 address lines and two BWS pins, while CY7C2265KV18 (1 M × 36) uses 18 address lines and four BWS pins, with distinct D/Q and control signal allocations per ball map.

CY7C2265KV18-550BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2265KV18-550BZXC FAQ

1.How can I place an order for CY7C2265KV18-550BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2265KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2265KV18-550BZXC reliable?

The price and inventory of CY7C2265KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2265KV18-550BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2265KV18-550BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2265KV18-550BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2265KV18-550BZXC?

CY7C2265KV18-550BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2265KV18-550BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2265KV18-550BZXC?

For technical support, including CY7C2265KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2265KV18-550BZXC requirements.

6.How does Aetrix verify that CY7C2265KV18-550BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2265KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2265KV18-550BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2265KV18-550BZXC?

All CY7C2265KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2265KV18-550BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2265KV18-550BZXC part is unused and in its original packaging.

Return procedure for CY7C2265KV18-550BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C2265KV18-550BZXC Tags

  • CY7C2265KV18-550BZXC
  • CY7C2265KV18-550BZXC PDF
  • CY7C2265KV18-550BZXC Datasheet
  • CY7C2265KV18-550BZXC Specifications
  • CY7C2265KV18-550BZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C2265KV18-550BZXC
  • Buy CY7C2265KV18-550BZXC
  • CY7C2265KV18-550BZXC Price
  • CY7C2265KV18-550BZXC Distributor
  • CY7C2265KV18-550BZXC Supplier
  • CY7C2265KV18-550BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER