Infineon Technologies CY7C2265KV18-550BZXI
- Part No.:
- CY7C2265KV18-550BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2265KV18-550BZXI.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2265KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II+ SRAM with 2.5-cycle read latency, 550 MHz clock operation, and on-die termination (ODT) supporting D[35:0], BWS[3:0], and K/K inputs. It features separate read/write ports, DDR interfaces delivering 1100 MT/s data rate, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.
For engineers reviewing the CY7C2265KV18 datasheet, CY7C2265KV18 pinout, CY7C2265KV18 application, or CY7C2265KV18 equivalent, key selection criteria include burst depth (4-word), I/O supply compatibility (1.4 V–1.8 V), HSTL interface compliance, FBGA-165 package constraints, and DOFF-controlled latency mode switching between 1-cycle and 2.5-cycle read timing.
Technical Context
The CY7C2265KV18 implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). Each port uses DDR signaling synchronized to complementary K/K clocks, with all inputs latched on rising edges and outputs registered to match echo clock (CQ/CQ) timing.
It integrates a PLL for precise data placement, supports depth expansion via RPS/WPS controls, and enables byte-selectable writes using four BWS signals. ODT configuration is set at power-up via the ODT pin and ZQ resistor network, targeting system impedance matching without external termination resistors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1 M × 36 organization) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR throughput per port |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned burst reads |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports dual-voltage system integration |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >500 MHz |
| On-Die Termination | Configurable ODT for D[35:0], BWS[3:0], K/K - eliminates 24+ external 50 Ω resistors |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-density routing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous data input | 36-bit wide write data bus sampled on K/K rising edges; supports partial writes via BWS |
| Q[35:0] | Synchronous data output | 36-bit wide read data bus driven on K/K rising edges; tri-stated when RPS deasserted |
| RPS / WPS | Port select control | Active-low enables independent read/write port activation; enables depth expansion |
| BWS[3:0] | Byte write select | Four independent active-low signals controlling 9-bit byte lanes (D[8:0] to D[35:27]) |
| K / K | Differential clock inputs | Complementary clocks driving all synchronous operations; only rising edges used |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K for simplified high-speed data capture |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ; asserts one cycle before first valid Q[35:0] word in burst |
| ODT / ZQ | Termination control | ODT pin selects termination range; ZQ sets output impedance to 0.2 × RQ (RQ to GND) |
| DOFF | Latency mode select | High = 2.5-cycle read latency; Low = 1-cycle latency (QDR I compatibility mode) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read-write transactions without bus turnaround delay |
| Four-word burst architecture | Reduces effective address bus frequency by 4× versus single-word access |
| On-die termination (ODT) | Eliminates 32 external termination resistors across data, byte-select, and clock inputs |
| Echo clocks (CQ/CQ) | Provides deterministic, low-jitter timing reference for source-synchronous data capture |
| Programmable read latency | DOFF pin switches between 1-cycle (QDR I) and 2.5-cycle (QDR II+) modes |
| JTAG 1149.1 test access | Enables boundary scan testing and in-system debug without additional test points |
Applications
| Network Packet Buffering | Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer with concurrent read/write capability for cut-through forwarding. Use Value: 1100 MT/s DDR throughput per port sustains full line-rate 10G/40G traffic with zero wait states. |
Use Scenario: Interfacing with SerDes-based switch fabric controllers requiring burst-aligned memory access. IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as crosspoint lookup table and queue manager in non-blocking fabrics. Use Value: Echo clocks (CQ/CQ) align with SerDes sampling windows, reducing setup/hold margin requirements by 150 ps. |
| Telecom Baseband Processing | High-Speed Test Equipment |
|
Use Scenario: Real-time buffering of OFDM symbol streams in LTE/5G baseband units. IC Role / Device Role / Timing Role: Dual-port memory staging intermediate FFT/IFFT results between processing stages. Use Value: Independent RPS/WPS control allows overlapping symbol write (WPS active) and previous symbol read (RPS active). |
Use Scenario: Capturing high-resolution waveform samples in automated test equipment with deep memory buffers. IC Role / Device Role / Timing Role: Burst-access memory storing sequential ADC samples during high-speed acquisition bursts. Use Value: 2.5-cycle latency + 4-word burst delivers predictable 10 ns access granularity for sub-ns timing-critical triggers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2263KV18 | 2 M × 18 organization (same 36-Mbit density); 19-bit address bus; different pinout for A[18:0] | Requires wider address bus but narrower data path; better suited for systems with limited data width but ample address pins | Select when system PCB layout favors 18-bit data bus and needs identical timing/latency behavior |
| IDT72T3615 | QDR II+ compatible, 1 M × 36, but rated for 500 MHz max (vs. 550 MHz); no DOFF pin for latency switching | Lacks programmable latency mode; fixed 2.5-cycle latency only; lower max bandwidth (1000 MT/s) | Choose when 500 MHz operation suffices and DOFF flexibility is unnecessary; verified drop-in for legacy IDT designs |
Compared with CY7C2263KV18 and IDT72T3615, the CY7C2265KV18 uniquely combines 550 MHz operation, DOFF-configurable latency, and FBGA-165 packaging-enabling higher throughput in space-constrained telecom and test equipment where timing adaptability and pin efficiency are critical.
Availability
CY7C2265KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom baseband processing, and high-speed test equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for CY7C2265KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR® II+ SRAM product line was designed specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and real-time signal processing systems where concurrent access and deterministic timing are mandatory.
FAQ
What is the function of the DOFF pin on CY7C2265KV18?
The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency (QDR II+ mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This allows system-level timing optimization without hardware changes and is sampled at initialization, not dynamically during operation.
How does on-die termination (ODT) work on CY7C2265KV18?
ODT is enabled via the ODT pin and calibrated using an external resistor (RQ) tied between ZQ and ground. A LOW on ODT selects RQ/3.33 termination (175–350 Ω range); HIGH selects RQ/1.66 (175–250 Ω). ODT applies to D[35:0], BWS[3:0], and K/K inputs, eliminating need for 32 discrete 50 Ω resistors and improving signal integrity above 500 MHz.
Can CY7C2265KV18 operate with VDDQ = 1.5 V?
Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation per datasheet Note 1. At 1.5 V, HSTL output drive strength is reduced versus 1.8 V, but timing parameters remain valid across the full 1.4–1.8 V range, enabling interoperability with 1.5 V ASIC/FPGA I/O banks.
What is the purpose of CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They provide a deterministic, low-jitter timing reference for capturing Q[35:0] output data in high-speed systems. Unlike system clocks, echo clocks track internal path delays, allowing receivers to sample data with minimal setup/hold margin-critical for reliable 1100 MT/s operation.
CY7C2265KV18-550BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2265KV18-550BZXI FAQ
1.How can I place an order for CY7C2265KV18-550BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2265KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2265KV18-550BZXI reliable?
The price and inventory of CY7C2265KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2265KV18-550BZXI is usually 5 days.
3.What payment methods are accepted for CY7C2265KV18-550BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2265KV18-550BZXI transactions.
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CY7C2265KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2265KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2265KV18-550BZXI?
For technical support, including CY7C2265KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2265KV18-550BZXI requirements.
6.How does Aetrix verify that CY7C2265KV18-550BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C2265KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2265KV18-550BZXI meets industry standards.
7.What is the process for return or replacement of CY7C2265KV18-550BZXI?
All CY7C2265KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2265KV18-550BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2265KV18-550BZXI part is unused and in its original packaging.
Return procedure for CY7C2265KV18-550BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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