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Infineon Technologies CY7C2268KV18-550BZC

Part No.:
CY7C2268KV18-550BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2268KV18-550BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,703

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Product details

Overview

CY7C2268KV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit DDR II+ synchronous SRAM with 2M × 18 organization, 550 MHz clock operation, 2.5-cycle read latency (DOFF = HIGH), on-die termination (ODT), and HSTL I/O interface - deployed in high-bandwidth networking line cards and packet buffer subsystems requiring deterministic burst data access.

For engineers reviewing the CY7C2268KV18 datasheet, CY7C2268KV18 pinout, CY7C2268KV18 application, or CY7C2268KV18 equivalent, key selection criteria include DDR II+ timing compliance, ODT configuration for D/BWS/K inputs, echo clock (CQ/CQ) synchronization, QVLD validity signaling, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This device implements a pipelined burst architecture where addresses are latched on alternating rising edges of K and K clocks, and each read access delivers two consecutive 18-bit words synchronized to both K and K edges. Internal PLL ensures precise data placement relative to echo clocks CQ/CQ.

All synchronous inputs (R/W, LD, BWS[1:0], A[19:0]) are registered on the rising edge of K; write data is registered on both K and K edges; read data is driven on both K and K edges with QVLD edge-aligned to CQ/CQ. ODT supports programmable termination for D[17:0], BWS[1:0], and K/K inputs via ZQ resistor calibration.

Key Specifications

Parameter Value and Actual Design Meaning
Density 36 Mbit (2M × 18), enabling dual-word burst transfers per address cycle
Max Clock Frequency 550 MHz - defines 1.1 Gbps DDR data rate (1100 MT/s) on DQ[17:0]
Read Latency 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), directly selecting DDR II+ vs DDR I timing mode
I/O Voltage VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with 1.5 V or 1.8 V memory interfaces
On-Die Termination Configurable ODT for D[17:0], BWS[1:0], K/K - eliminates external 50 Ω resistors and simplifies PCB routing
Output Timing Reference CQ/CQ echo clocks - provide source-synchronous capture for Q[17:0] without board-level skew compensation
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for thermal dissipation and signal integrity in dense router ASIC interfaces

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shared pins for input (write) and output (read); tri-stated automatically during deselect; driven on both K and K rising edges
K / K Differential clock inputs Rising edges control all synchronous operations; K used for address/control registration, both used for data registration/driving
CQ / CQ Source-synchronous echo clocks Free-running outputs aligned to K/K; enable reliable latch timing for Q[17:0] in high-speed systems without trace length matching
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ to signal when Q[17:0] contains valid read data - eliminates need for fixed delay windows
ODT On-die termination select Configures ODT resistance range (RQ/3.33 or RQ/1.66) during power-up; floating defaults to high-range mode
ZQ Impedance calibration reference Connects to external resistor to ground (175–350 Ω); sets output driver impedance to 0.2 × RQ for DQ/CQ outputs
LD Load strobe Latches address and R/W on rising edge of K; initiates burst transaction - required for every access
BWS0 / BWS1 Byte write selects Active-low signals controlling DQ[8:0] and DQ[17:9] respectively; allow partial-word writes without read-modify-write overhead

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers system EMI and routing congestion
Programmable read latency (1 or 2.5 cycles) DOFF pin enables runtime selection between DDR I compatibility and DDR II+ bandwidth optimization
HSTL Class I compatible I/O Ensures signal integrity at 550 MHz clock with variable drive strength - meets JEDEC SSTL-18 and HSTL_I specs
JTAG 1149.1 test access port Enables boundary scan testing and debug visibility without additional probe points - critical for high-density BGA layouts
Internal self-timed write circuitry Eliminates external write pulse timing constraints - simplifies controller logic and improves write reliability across voltage/temperature

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet switch ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency burst SRAM serving as first-level packet buffer - interfacing directly with SerDes MAC controllers.

Use Value: 2.5-cycle latency + echo clocks ensure sub-2 ns data valid window alignment, eliminating setup/hold violations at 550 MHz.

Use Scenario: Buffering voice-over-IP (VoIP) payload streams in carrier-grade TDM-to-packet gateways.

IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic 18-bit word delivery to DSP co-processors over HSTL buses.

Use Value: On-die termination eliminates 36 external 50 Ω resistors per device - reduces BOM cost and PCB area by >12 mm² per instance.

High-Speed Test Equipment Memory Defense Radar Signal Processing

Use Scenario: Capturing high-fidelity analog waveform samples in automated test equipment (ATE) digitizer modules.

IC Role / Device Role / Timing Role: Burst-access SRAM acting as real-time acquisition buffer - synchronized to precision clock generators and FPGA sequencers.

Use Value: QVLD signal provides unambiguous data validity indication - removes need for fixed delay chains or eye-diagram margining.

Use Scenario: Storing intermediate FFT coefficients in airborne radar digital beamforming subsystems operating under wide temperature ranges.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with neutron soft error immunity, supporting burst reads/writes in deterministic signal processing pipelines.

Use Value: 1.8 V core + 1.4–1.8 V I/O allows direct interfacing with radiation-hardened FPGAs without level-shifting - reducing component count and failure modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-550BIN 550 MHz, 36-Mbit QDR II+ (not DDR II+); uses separate read/write ports; no ODT; requires dual-clock domain management Best suited for true dual-port applications like cache tag storage - not drop-in for burst-read-only packet buffering Select only if system requires simultaneous read/write concurrency and can accommodate higher pin count and no ODT
IS45S32800J-55BLI 550 MHz, 32-Mbit DDR2 SDRAM; asynchronous refresh; higher latency (CAS=3–5); no echo clocks or QVLD Applicable in cost-sensitive, non-real-time buffering where refresh overhead and variable latency are acceptable Choose only when deterministic timing is not required and system already supports DDR2 SDRAM controller infrastructure

Compared with AS7C362000B-550BIN and IS45S32800J-55BLI, CY7C2268KV18 uniquely delivers DDR II+ burst timing with integrated ODT, echo clocks, and QVLD - making it the sole option for deterministic, low-pin-count, high-reliability packet buffer designs in telecom and test equipment.

Availability

CY7C2268KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and defense radar signal processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C2268KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor solutions, and memory technologies for industrial, automotive, and communications markets.

CY7C2268KV18 belongs to Infineon's legacy Cypress DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth, low-latency data buffering in networking and telecom infrastructure where timing predictability outweighs density-per-dollar metrics.

FAQ

What is the function of the DOFF pin on CY7C2268KV18?

The DOFF (Double-Off) pin configures the device's read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle latency; when LOW, it reverts to DDR I timing with 1-cycle latency. This pin is sampled at power-up and remains static during operation - no dynamic switching is supported.

How does on-die termination (ODT) work on CY7C2268KV18?

ODT applies programmable termination resistors to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor (175–350 Ω to ground). The ODT pin selects between two ranges: LOW enables RQ/3.33 (~53–105 Ω), HIGH enables RQ/1.66 (~105–210 Ω); floating defaults to HIGH range.

Can CY7C2268KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes - the device supports independent VDD (1.8 V ± 0.1 V) and VDDQ (1.4 V to 1.8 V), allowing 1.5 V I/O operation with 1.8 V core. This enables interoperability with 1.5 V HSTL-compatible FPGAs while maintaining full 550 MHz performance and ODT functionality.

What is the role of CQ and CQ echo clocks in system timing?

CQ and CQ are free-running, source-synchronous output clocks phase-aligned to K and K, respectively. They provide precise timing references for capturing Q[17:0] data - eliminating interconnect skew sensitivity and removing the need for board-level delay tuning or adjustable input delays in the receiving controller.

CY7C2268KV18-550BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2268KV18-550BZC FAQ

1.How can I place an order for CY7C2268KV18-550BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2268KV18-550BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2268KV18-550BZC reliable?

The price and inventory of CY7C2268KV18-550BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2268KV18-550BZC is usually 5 days.

3.What payment methods are accepted for CY7C2268KV18-550BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2268KV18-550BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2268KV18-550BZC?

CY7C2268KV18-550BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2268KV18-550BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2268KV18-550BZC?

For technical support, including CY7C2268KV18-550BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2268KV18-550BZC requirements.

6.How does Aetrix verify that CY7C2268KV18-550BZC is sourced from the original manufacturer or authorized distributors?

All CY7C2268KV18-550BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2268KV18-550BZC meets industry standards.

7.What is the process for return or replacement of CY7C2268KV18-550BZC?

All CY7C2268KV18-550BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2268KV18-550BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2268KV18-550BZC part is unused and in its original packaging.

Return procedure for CY7C2268KV18-550BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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