Infineon Technologies CY7C2270KV18-400BZXC

Overview

CY7C2270KV18-400BZXC from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous pipelined DDR II+ SRAM configured as 1M × 36, operating at 400 MHz with 2.5-cycle read latency when DOFF = HIGH, featuring on-die termination (ODT), echo clocks (CQ/CQ), and QVLD data-valid signaling for high-speed memory subsystems in networking line cards and packet buffer applications.

For engineers reviewing the CY7C2270KV18-400BZXC datasheet, CY7C2270KV18-400BZXC pinout, CY7C2270KV18-400BZXC application, or CY7C2270KV18-400BZXC equivalent, this page delivers verified electrical parameters, FBGA-165 package mapping, burst timing behavior, ODT configuration logic, and real-world design integration guidance - all grounded in the official Infineon document 001-57845 Rev. *I.

Technical Context

This device implements a two-word burst DDR II+ architecture with dual input clocks (K/K) - K controls address/control latching on rising edges, while both K and K register write data and drive read data. The internal PLL ensures precise data placement relative to echo clocks CQ/CQ, enabling deterministic capture without external strobes.

It supports dual latency modes: 2.5-cycle read latency (DOFF = HIGH) for DDR II+ compatibility and 1-cycle latency (DOFF = LOW) for DDR I–like operation. On-die termination applies to D[35:0], BWS[3:0], and K/K inputs, with impedance range selected via ODT pin state and calibrated against ZQ-resistor value.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C2270KV18-400BZXC, the -450BZXC offers +12.5% bandwidth with identical integration benefits, while the AS7C336000B-400BIN sacrifices all DDR II+ features for lower unit cost and simpler interface - making it relevant only in non-burst, non-high-speed contexts.

Availability

CY7C2270KV18-400BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and ATE pattern memory applications requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C2270KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive MCUs, and high-performance memory solutions - with deep heritage in high-speed SRAMs via its acquisition of Cypress Semiconductor.

CY7C2270KV18 belongs to Infineon's QDR II+ SRAM product line, engineered specifically for deterministic-latency, burst-mode memory subsystems in communications infrastructure where DDR timing predictability and signal integrity outweigh raw density or cost-per-bit concerns.

FAQ

What is the function of the DOFF pin on CY7C2270KV18-400BZXC?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle read latency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This pin is sampled at power-up and remains latched until reset. It does not affect write timing or burst length, and its state directly determines the number of K-clock cycles between address load and first valid QVLD assertion.

Can CY7C2270KV18-400BZXC operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes - the device explicitly supports VDDQ from 1.4 V to VDD (1.8 V), including 1.5 V operation. This allows interoperability with 1.5 V DDR controllers while maintaining 1.8 V core voltage for optimal SRAM cell stability. DC characteristics (e.g., t_DS, t_DH) are validated across this range, and HSTL output drive strength automatically scales with VDDQ per ZQ calibration.

How is on-die termination (ODT) enabled and calibrated on this SRAM?

ODT is enabled by driving the ODT pin HIGH or LOW at power-up to select impedance range (RQ/1.66 or RQ/3.33), then connecting a precision resistor (175–350 Ω) between ZQ and GND. The device measures ZQ voltage during initialization and configures termination strength for D[35:0], BWS[3:0], and K/K inputs accordingly. No external registers or commands are needed - calibration is fully autonomous.

Is the CY7C2270KV18-400BZXC pin-compatible with CY7C2268KV18-400BZXC?

No - although both use the same 165-ball FBGA package, their pinouts differ significantly. CY7C2268KV18 (2M × 18) maps DQ[17:0] and BWS[1:0] across fewer balls, while CY7C2270KV18 (1M × 36) uses all 36 DQ pins and four BWS signals, relocating several NC and control pins. Board-level substitution requires PCB redesign; they are functionally related but not drop-in replacements.