Infineon Technologies CY7C2270KV18-550BZXC
- Part No.:
- CY7C2270KV18-550BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2270KV18-550BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:643
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Product details
Overview
CY7C2270KV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous pipelined DDR II+ SRAM configured as 1M × 36, operating at 550 MHz with 2.5-cycle read latency when DOFF = HIGH, featuring on-die termination (ODT), echo clocks (CQ/CQ), and QVLD data-valid signaling for high-speed memory subsystems in networking line cards and packet buffers.
For engineers reviewing the CY7C2270KV18 datasheet, CY7C2270KV18 pinout, CY7C2270KV18 application, or CY7C2270KV18 equivalent, key selection criteria include its 1M × 36 organization, 1100 MT/s DDR interface, HSTL I/O compatibility, 165-ball FBGA package, and dual-clock (K/K) timing architecture supporting precise data capture in burst-oriented systems.
Technical Context
The CY7C2270KV18 implements a two-word burst architecture where each address access delivers 36-bit data on consecutive rising edges of K and K clocks, enabling 2.5-cycle read latency under DOFF = HIGH or 1-cycle latency under DOFF = LOW. Its internal SRAM core is synchronized by a phase-locked loop (PLL) to align output data with echo clocks CQ/CQ.
All synchronous inputs-address (A[18:0]), R/W, LD, BWS[3:0], and DQ[35:0]-are registered on K or K edges; outputs are edge-aligned to CQ/CQ with QVLD indicating valid data windows. ODT supports dynamic impedance matching on DQ, BWS, and clock inputs using ZQ calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 36 Mbit (1M × 36 configuration) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR data rate |
| Read Latency | 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V HSTL interfaces |
| Core Voltage | VDD = 1.8 V ± 0.1 V - defines stable SRAM core operation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB routing |
| Termination | On-die termination (ODT) for DQ, BWS, K/K - eliminates external resistors and simplifies layout |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR I/O pins sampled on K/K rising edges; drive outputs aligned to CQ/CQ with QVLD validation |
| K / K | Differential input clocks | Rising edges control all synchronous register transfers; K used for address/control, both used for data |
| CQ / CQ | Output echo clocks | Free-running clocks synchronized to K; enable source-synchronous data capture without board-level skew compensation |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ to signal valid DQ[35:0] windows during reads |
| ODT | On-die termination select | Configures ODT resistance range (RQ/3.33 or RQ/1.66) during power-up based on ZQ calibration resistor |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to tune output driver and ODT impedance to system bus (0.2 × RQ) |
| LD | Load strobe | Sampled on K rising edge to latch address and R/W direction; initiates two-word burst transaction |
| BWS[3:0] | Byte write selects | Active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]) during writes |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling frequency by 50% versus single-word access, lowering EMI and routing complexity |
| Programmable read latency (1 or 2.5 cycles) | Enables backward compatibility with DDR I systems (DOFF = LOW) or optimized bandwidth in DDR II+ designs (DOFF = HIGH) |
| HSTL-compatible I/O with variable drive strength | Ensures signal integrity across 1.4–1.8 V VDDQ while matching JEDEC HSTL Class I specifications |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system diagnostics without requiring additional test pads or probes |
| Internal PLL for data placement accuracy | Minimizes clock-to-output skew between DQ and CQ/CQ, critical for >550 MHz system timing closure |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with minimal latency variation. IC Role / Device Role / Timing Role: DDR II+ SRAM serving as primary packet buffer with deterministic 2.5-cycle read latency and burst-aligned data delivery. Use Value: Enables sustained 1100 MT/s throughput per device, reducing buffer congestion and jitter in multi-gigabit traffic flows. | Use Scenario: Supporting real-time voice and data processing in carrier-grade DSLAMs and optical transport equipment. IC Role / Device Role / Timing Role: Synchronous memory interfacing directly with FPGA-based traffic managers using K/K clock domain separation. Use Value: Echo clocks CQ/CQ eliminate interconnect skew, allowing reliable data capture at 550 MHz without complex PCB length matching. |
| Network Processor Co-Processor Memory | Test Equipment Pattern Memory |
Use Scenario: Offloading packet classification and lookup table storage from network processors in DPI and firewall appliances. IC Role / Device Role / Timing Role: High-bandwidth, low-latency scratchpad memory accessed via burst-aligned address sequences from NPU DMA engines. Use Value: 1M × 36 organization matches typical NPU word widths, minimizing bus width conversion logic and latency overhead. | Use Scenario: Storing stimulus and expected response vectors in automated semiconductor test systems requiring precise timing alignment. IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to tester clock domains using QVLD and echo clocks for cycle-accurate pass/fail evaluation. Use Value: QVLD signal provides unambiguous data validity window, eliminating setup/hold margin uncertainty in high-speed ATE applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2270KV18-450BZXC | Lower max clock frequency (450 MHz vs. 550 MHz); identical 1M × 36 organization, ODT, and pinout | Targeted at cost-sensitive systems where 900 MT/s bandwidth suffices and thermal/power budgets are tighter | Select when system clocking constraints or thermal limits preclude 550 MHz operation |
| AS7C3256B-15JCIN | Asynchronous 32K × 8 CMOS SRAM; no DDR interface, no ODT, no echo clocks; 15 ns access time | Used in legacy control-plane buffering or non-burst microcontroller interfaces where timing simplicity outweighs bandwidth needs | Choose only for non-pipelined, low-frequency control logic-not a functional replacement for DDR II+ data path use |
Compared with CY7C2270KV18-450BZXC, the -550BZXC delivers +22% bandwidth and tighter timing margins for next-gen packet processing; versus AS7C3256B-15JCIN, it offers burst DDR architecture essential for high-throughput data planes but requires full DDR timing design discipline.
Availability
CY7C2270KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, network processor co-processor memory, and test equipment pattern memory requiring stable component supply and long-term industrial availability.
Supply support for CY7C2270KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.
The CY7C2270KV18 belongs to Infineon's QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking and communications infrastructure equipment.
FAQ
What is the function of the DOFF pin on CY7C2270KV18?
The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle read latency; when LOW, it reverts to DDR I behavior with 1-cycle latency. This allows hardware-level compatibility switching without firmware changes or external logic.
How does the ZQ pin calibrate output impedance?
ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling internal circuitry to set output driver and ODT impedance to 0.2 × RQ (e.g., 48 Ω). Direct connection to VDDQ activates minimum-impedance mode; floating or grounding ZQ is prohibited and may cause undefined behavior.
Can CY7C2270KV18 operate with only the K clock, ignoring K?
No. The device requires both K and K differential clocks for correct operation: K latches address and control signals, while both K and K sample write data and drive read data. Omitting K violates timing requirements and will result in failed writes or invalid read outputs.
Is the 165-ball FBGA package compatible with standard reflow profiles?
Yes - the CY7C2270KV18-550BZXC uses a JEDEC-standard 165-ball FBGA package qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 3 and compatible with standard lead-free reflow profiles (peak temperature ≤ 260°C, time above liquidus 60–150 seconds).
CY7C2270KV18-550BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2270KV18-550BZXC FAQ
1.How can I place an order for CY7C2270KV18-550BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2270KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2270KV18-550BZXC reliable?
The price and inventory of CY7C2270KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2270KV18-550BZXC is usually 5 days.
3.What payment methods are accepted for CY7C2270KV18-550BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2270KV18-550BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C2270KV18-550BZXC?
CY7C2270KV18-550BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2270KV18-550BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2270KV18-550BZXC?
For technical support, including CY7C2270KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2270KV18-550BZXC requirements.
6.How does Aetrix verify that CY7C2270KV18-550BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2270KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2270KV18-550BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2270KV18-550BZXC?
All CY7C2270KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2270KV18-550BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2270KV18-550BZXC part is unused and in its original packaging.
Return procedure for CY7C2270KV18-550BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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