Infineon Technologies CY7C2270XV18-633BZXC

Overview

CY7C2270XV18-633BZXC from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous pipelined DDR II+ Xtreme SRAM configured as 1M × 36, operating at 633 MHz with 2.5-cycle read latency and on-die termination (ODT). It uses HSTL I/O, dual input clocks (K/K), echo clocks (CQ/CQ), and QVLD for precise high-speed data capture in memory subsystems of networking line cards and test equipment.

For engineers reviewing the CY7C2270XV18-633BZXC datasheet, CY7C2270XV18-633BZXC pinout, CY7C2270XV18-633BZXC application, or CY7C2270XV18-633BZXC equivalent, key selection criteria include 1M × 36 depth-width configuration, 1.8 V core / 1.5 V I/O supply compatibility, ODT support for DQ/BWS/K/K inputs, and JTAG 1149.1 test access compliance.

Technical Context

This SRAM implements a two-word burst architecture where each address access delivers 36-bit data on consecutive rising edges of K and K clocks. Internal PLL ensures accurate data placement relative to echo clocks CQ/CQ, while synchronous self-timed writes eliminate external write strobes.

The device supports dual latency modes: 2.5-cycle read latency when DOFF = HIGH (DDR II+ mode), and 1-cycle latency when DOFF = LOW (DDR I–compatible mode). ODT is enabled only during write operations and dynamically configured via ZQ calibration resistor and ODT pin voltage level.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with CY7C2268XV18-633BZXC, this part offers identical speed and features but optimized for 1M × 36 systems; versus AS7C336000B-20JIN, it delivers 3× higher bandwidth and eliminates external termination, though requiring DDR-aware controller design.

Availability

CY7C2270XV18-633BZXC is available at Aetrix Electronics and suitable for high-speed test equipment, telecom line cards, automated test systems, and oscilloscope acquisition subsystems requiring stable component supply and long-term lifecycle support.

Supply support for CY7C2270XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the former Cypress SRAM portfolio.

This device belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic-latency, high-bandwidth memory buffering in test, measurement, and communications infrastructure where DDR I/II timing predictability and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C2270XV18-633BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This pin is sampled at power-up and remains static during operation - no runtime switching is supported. Its state directly determines internal pipeline depth and timing closure requirements.

How does on-die termination (ODT) work on this SRAM, and which pins does it support?

ODT is enabled only during write operations and applies to DQ[35:0], BWS[3:0], and K/K inputs. Resistance value is selected by ODT pin voltage (LOW → RQ/3.33; HIGH → RQ/1.66) and calibrated via the ZQ pin connected to a precision resistor to ground. ODT is disabled automatically during read cycles to prevent interference with data output drivers.

Can CY7C2270XV18-633BZXC be used with a 1.8 V-only supply, or is separate VDDQ required?

VDD must be 1.8 V ± 0.1 V, but VDDQ is independently required at 1.4–1.6 V (1.5 V typical) for HSTL I/O compliance. Using 1.8 V on VDDQ violates HSTL Class I specifications, risks excessive current draw, and may cause timing violations or signal integrity failure. Separate 1.5 V LDO or regulator for VDDQ is mandatory.

Is the CY7C2270XV18-633BZXC pin-compatible with earlier Cypress DDR SRAMs like CY7C2251V18?

No - CY7C2270XV18-633BZXC uses a 165-ball FBGA package with different pin assignments, including dedicated echo clocks (CQ/CQ), QVLD, and ODT control, which are absent in CY7C2251V18's 119-ball package. Signal mapping, power pin distribution, and timing behavior differ significantly; PCB redesign and firmware adaptation are required for migration.