Infineon Technologies CY7C25442KV18-333BZI

Overview

CY7C25442KV18-333BZI from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 333 MHz clock frequency, 2.0-cycle read latency, on-die termination (ODT), and HSTL I/O supporting 1.4–1.8 V VDDQ. It delivers 666 MT/s DDR throughput per port in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C25442KV18-333BZI datasheet, CY7C25442KV18-333BZI pinout, CY7C25442KV18-333BZI application, or CY7C25442KV18-333BZI equivalent, key selection criteria include dual-port concurrency, ODT configuration via ZQ/ODT pins, echo clock timing alignment (CQ/CQ), QVLD data validity signaling, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Each port operates with double-data-rate interfaces synchronized to K (positive) and K (negative) clocks, enabling concurrent burst transfers of two 36-bit words per cycle.

Read latency is configurable: 2.0 cycles when DOFF = HIGH (QDR II+ mode), or 1.0 cycle when DOFF = LOW (QDR I mode). On-die termination applies to D[35:0], BWS[3:0], and K/K inputs, with impedance range selected by ODT pin state and calibrated against external ZQ resistor (175–350 Ω).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and AS7C36256P-15JIN, CY7C25442KV18-333BZI uniquely combines 333 MHz DDR bandwidth, on-die termination, echo clocks, and QVLD-enabling robust 666 MT/s operation in dense, high-speed PCB layouts without external timing compensation.

Availability

CY7C25442KV18-333BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and automated test equipment requiring stable component supply and long-term lifecycle support.

Supply support for CY7C25442KV18-333BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the QDR SRAM portfolio for high-performance infrastructure applications.

This device belongs to the QDR® II+ SRAM product line, designed specifically for deterministic, low-latency, concurrent-access memory in networking, telecom, and test equipment where DDR bus turnaround and signal integrity limit performance.

FAQ

What is the function of the DOFF pin on CY7C25442KV18-333BZI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables QDR II+ mode with 2.0-cycle read latency and full feature set including echo clocks and QVLD; when LOW, it reverts to QDR I mode with 1.0-cycle latency but disables QVLD and echo clock functionality. This provides backward compatibility while preserving performance headroom.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled by connecting an external precision resistor (175–350 Ω) to the ZQ pin and setting the ODT pin to HIGH (for RQ/1.66) or LOW (for RQ/3.33). The internal termination applies only to D[35:0], BWS[3:0], and K/K inputs, eliminating 12–16 external resistors and reducing board area, cost, and routing complexity in high-speed designs.

Can CY7C25442KV18-333BZI operate with 1.5 V VDDQ?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. This allows direct interfacing with 1.5 V FPGA I/O banks (e.g., Xilinx Ultrascale+, Intel Stratix 10) without level shifters, while maintaining full 333 MHz operation and HSTL compliance per JEDEC JESD8-15A.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They are sourced from the SRAM and delivered to the controller (e.g., FPGA) to serve as source-synchronous capture clocks for Q[35:0] data. This eliminates clock-to-data skew across the PCB and enables reliable 666 MT/s data capture without complex deskew circuitry.