Infineon Technologies CY7C2544KV18-333BZI

Overview

CY7C2544KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 333 MHz clock frequency, 2.0-cycle read latency, and on-die termination (ODT) supporting D[35:0], BWS[3:0], and K/K inputs. It implements separate read/write ports with DDR interfaces on both, enabling concurrent high-bandwidth memory access in network packet buffers and baseband processing.

For engineers reviewing the CY7C2544KV18 datasheet, CY7C2544KV18 pinout, CY7C2544KV18 application, or CY7C2544KV18 equivalent, key selection considerations include its 165-ball FBGA package, HSTL I/O compatibility with 1.4V–1.8V VDDQ, echo clocks (CQ/CQ) for timing margin, QVLD data-valid signaling, and DOFF-controlled PLL bypass for QDR-I mode operation at ≤167 MHz.

Technical Context

This device uses synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus (A[19:0]), latched on alternating rising edges of K and K clocks. Internal organization is two 1M × 36 arrays, supporting 2-word burst transfers per access.

It integrates a PLL for precise DDR data placement, supports ODT configuration via ZQ resistor and ODT pin logic level, and provides JTAG 1149.1 test access. Read operations output valid data aligned to CQ/CQ edges, with QVLD asserting synchronously to indicate data validity.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with CY7C2542KV18, CY7C2544KV18 offers higher per-pin throughput via 36-bit width and tighter timing control for packet-oriented workloads; versus AS7C3256B-20JIN, it delivers >6× bandwidth with deterministic latency and integrated signal integrity features essential for high-speed serial infrastructure.

Availability

CY7C2544KV18 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, telecom line card memory, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C2544KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, communications, and industrial systems.

CY7C2544KV18 belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic, high-bandwidth, low-latency memory access in packet-switched and signal-processing infrastructure.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted LOW, forcing the device into QDR-I mode with 1-cycle read latency and maximum 167 MHz operation. In this mode, timing parameters shift significantly: K/K setup/hold windows widen, CQ/CQ phase relationship changes, and QVLD alignment differs. Full timing revalidation is required for any design using DOFF-driven fallback.

How does On-Die Termination (ODT) configure for different signal groups?

ODT applies independently to D[35:0], BWS[3:0], and K/K inputs. Its resistance value is selected at power-up based on the logic level of the ODT pin and the ZQ resistor value: ODT = LOW selects RQ/3.33 (175–350 Ω range); ODT = HIGH selects RQ/1.66 (175–250 Ω range). No configuration register or command is needed - it is hardware-initialized.

Can CY7C2544KV18 be used in systems with 1.5V VDDQ?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal. At 1.5 V, HSTL output drive strength scales linearly, and input thresholds remain compliant per HSTL Class I specifications. System-level timing margins must be verified per actual VDDQ, temperature, and loading conditions using the published AC characteristics table.

What is the role of the ZQ pin, and how should it be connected?

ZQ sets output driver impedance to 0.2 × RQ, where RQ is an external resistor tied between ZQ and GND (recommended 50 Ω ±1%). Alternatively, ZQ may be connected directly to VDDQ to enable minimum output impedance mode. ZQ must never be left floating or tied to GND - doing so causes undefined output drive strength and potential signal integrity failure.