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Infineon Technologies CY7C2562XV18-450BZXC

Part No.:
CY7C2562XV18-450BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2562XV18-450BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,411

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Product details

Overview

CY7C2562XV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ Xtreme SRAM with two-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 450 MHz with DDR interfaces on both read and write ports (900 Mbps effective data rate), uses 1.8 V core supply and 1.5 V I/O supply, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-speed networking line cards requiring deterministic low-latency memory access.

For engineers reviewing the CY7C2562XV18 datasheet, CY7C2562XV18 pinout, CY7C2562XV18 application, or CY7C2562XV18 equivalent, this device delivers concurrent read/write throughput without bus turnaround, supports depth expansion via RPS/WPS control, and integrates echo clocks (CQ/CQ) and QVLD for reliable high-speed data capture in packet buffering and switching fabric designs.

Technical Context

The CY7C2562XV18 implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths-D[17:0] inputs and Q[17:0] outputs-enabling true concurrent transactions. Its dual-clock interface (K/K) drives all synchronous inputs on rising edges only, while echo clocks CQ/CQ align with output data timing to simplify receiver design.

It features a PLL for precise data placement, programmable ODT on D[17:0], BWS[1:0], and K/K inputs, and configurable read latency (2.5 cycles when DOFF = HIGH; 1 cycle when DOFF = LOW). The 4M × 18 organization uses 21 address bits latched alternately on K and K edges, eliminating address bus duplication.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Maximum Clock Frequency 450 MHz - enables 900 MT/s DDR data transfers per port
Read Latency 2.5 clock cycles - deterministic timing for pipeline-aligned read responses
Core Supply Voltage 1.8 V ± 0.1 V - matches advanced logic families and reduces dynamic power
I/O Supply Voltage 1.4–1.6 V - supports HSTL-15 compatible signaling with variable drive strength
On-Die Termination Configurable ODT on D[17:0], BWS[1:0], K/K - eliminates external resistors and improves signal integrity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density PCB routing and thermal dissipation

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free only.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Latched on rising edge of K/K; supports byte-write via BWS0/BWS1
Q[17:0] Synchronous read data output Driven on rising edge of K/K; valid indicated by QVLD aligned to CQ/CQ
RPS / WPS Read/Write Port Select Active-low controls port enable; enables independent depth expansion
K / K Dual-phase input clocks Rising edges sample all synchronous inputs; no internal inversion required
CQ / CQ Echo clocks Free-running, phase-aligned copies of K/K for simplified source-synchronous capture
DOFF Latency mode control HIGH → 2.5-cycle QDR II+ mode; LOW → 1-cycle QDR I compatibility mode
ODT On-die termination select Configures ODT resistance range (RQ/3.33 or RQ/1.66) during power-up initialization
QVLD Valid data indicator Edge-aligned with CQ/CQ; signals when Q[17:0] contains stable, valid read data

Key Features

Feature Design Value
Two-word burst architecture Delivers 36-bit data per clock cycle (2 × 18-bit words), halving required address bus frequency
Separate read/write data ports Eliminates bus turnaround delays and contention, enabling full-duplex memory access
Programmable ODT Reduces PCB routing complexity and cost by replacing eight external 50-Ω resistors with on-chip equivalents
PLL-based data placement Ensures sub-cycle timing margin for 450 MHz operation across voltage/temperature corners
JTAG 1149.1 test access port Enables boundary scan testing and in-system programming without additional debug hardware

Applications

Packet Buffering in Switch ASICs Line Card Memory for 10G/25G Ethernet

Use Scenario: High-throughput packet buffering in Layer 2/3 switching ASICs where ingress and egress queues require simultaneous read/write access to shared memory.

IC Role / Device Role / Timing Role: Dual-port SRAM providing concurrent 900 MT/s read and write bandwidth with deterministic 2.5-cycle latency for flow control and scheduling logic.

Use Value: Eliminates arbitration overhead and bus turnaround penalties, increasing effective queue utilization by >35% versus single-port DDR3 solutions.

Use Scenario: Frame storage and reordering in telecom line cards supporting 10G/25G Ethernet PHYs with strict jitter and latency budgets.

IC Role / Device Role / Timing Role: Low-jitter, source-synchronous memory interfacing via CQ/CQ and QVLD to synchronize with SerDes recovery clocks.

Use Value: Enables sub-nanosecond setup/hold margins at 450 MHz, reducing timing closure effort and eliminating need for external delay tuning.

High-Speed Test Equipment Memory Real-Time Signal Processing Buffers

Use Scenario: Capture and playback buffer in automated test equipment (ATE) requiring glitch-free, deterministic memory access for pattern generation.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM with JTAG boundary scan support for in-system verification and fault isolation.

Use Value: Provides guaranteed 1.8 V core timing compliance across industrial temperature range (–40°C to +85°C), ensuring repeatability in production test environments.

Use Scenario: Input/output buffering in FPGA-based radar DSP systems performing real-time FFT and beamforming with tight loop timing.

IC Role / Device Role / Timing Role: Burst-mode memory delivering two 18-bit samples per clock to match ADC/DAC parallel interfaces without glue logic.

Use Value: Reduces FPGA logic resource usage by 22% compared to DDR3 controller IP integration, freeing LUTs for algorithm acceleration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 36-Mbit (2M × 18), 333 MHz max, no ODT, LVDS I/O, 2.5 V core Limited to lower bandwidth; requires external termination and level-shifting for 1.5 V I/O domains Select when legacy LVDS interface compatibility is required and 450 MHz operation is unnecessary
ISSI IS61WV102418BLL-15BLI 18-Mbit (512K × 36), 150 MHz, asynchronous, 3.3 V only, no burst or echo clocks Cannot support concurrent read/write at high speed; lacks QVLD, CQ, or ODT for clean high-frequency operation Consider only for cost-sensitive, non-real-time buffering where latency and bandwidth are secondary

Compared with IDT72T36120L10BG and IS61WV102418BLL-15BLI, the CY7C2562XV18 delivers 2.7× higher bandwidth, integrated signal integrity features (ODT, echo clocks, QVLD), and deterministic 2.5-cycle latency-making it uniquely suited for next-generation packet processing and high-speed instrumentation where timing predictability is critical.

Availability

CY7C2562XV18 is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory for 10G/25G Ethernet, and real-time signal processing buffers requiring stable component supply across extended temperature and long product lifecycles.

Supply support for CY7C2562XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ Xtreme SRAM product line was designed specifically for high-speed networking and test equipment requiring deterministic latency, concurrent access, and robust signal integrity at frequencies beyond conventional DDR memory limits.

FAQ

What is the function of the DOFF pin on CY7C2562XV18?

The DOFF (Disable Off) pin configures the device's read latency mode. When asserted HIGH, it enables QDR II+ mode with 2.5-cycle read latency and full burst functionality. When tied LOW or to VSS, the device operates in backward-compatible QDR I mode with 1-cycle read latency. This pin is sampled during power-up initialization and remains static during operation.

How does On-Die Termination (ODT) work on CY7C2562XV18?

ODT is enabled via the ODT pin and calibrated using an external precision resistor (RQ) connected to the ZQ pin. A LOW on ODT selects RQ/3.33 termination (≈175–350 Ω range); HIGH selects RQ/1.66 (≈175–250 Ω). ODT applies to D[17:0], BWS[1:0], and K/K inputs, eliminating the need for eight discrete 50-Ω resistors and improving impedance matching at 450 MHz.

Can CY7C2562XV18 be used in depth-expanded configurations?

Yes. Depth expansion is supported using RPS (Read Port Select) and WPS (Write Port Select) pins. Multiple devices can be stacked with shared address, clock, and data buses while using individual RPS/WPS lines to enable specific devices per transaction. This allows seamless scaling from 4M × 18 to larger capacities without external multiplexing logic.

What is the role of CQ and CQ echo clocks?

CQ and CQ are free-running, source-synchronous echo clocks derived from K and K respectively. They are edge-aligned with Q[17:0] output data and QVLD, enabling receivers to latch data with zero skew. Unlike forwarded clocks in other protocols, CQ/CQ require no phase adjustment and directly replace complex delay-locked loops in high-speed FPGA capture logic.

CY7C2562XV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2562XV18-450BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2562XV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2562XV18-450BZXC reliable?

The price and inventory of CY7C2562XV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2562XV18-450BZXC is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2562XV18-450BZXC?

For technical support, including CY7C2562XV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2562XV18-450BZXC requirements.

6.How does Aetrix verify that CY7C2562XV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2562XV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2562XV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2562XV18-450BZXC?

All CY7C2562XV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2562XV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2562XV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C2562XV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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