Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C25632KV18-400BZXI

Part No.:
CY7C25632KV18-400BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25632KV18-400BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,752

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C25632KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 2.5-cycle read latency, 550 MHz clock support, and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs. It delivers 1100 MT/s DDR throughput on separate read/write ports and operates at 1.8 V core / 1.4–1.8 V I/O for high-speed networking buffer applications.

For engineers reviewing the CY7C25632KV18 datasheet, CY7C25632KV18 pinout, CY7C25632KV18 application, or CY7C25632KV18 equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, HSTL I/O compatibility, and FBGA-165 package constraints in high-bandwidth memory subsystems.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Address latching occurs on alternate rising edges of K and K clocks, enabling concurrent access without bus turnaround.

It uses a PLL for precise data placement and supports dual-mode latency: 2.5 cycles when DOFF = HIGH (QDR II+ mode) or 1 cycle when DOFF = LOW (QDR I compatibility). ODT is configurable via ZQ resistor and ODT pin to match system impedance for D[17:0], BWS[1:0], and K/K.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 organization)
Max Clock Frequency 400 MHz (K/K input clocks; enables 800 MT/s DDR interface)
Read Latency 2.5 clock cycles (DOFF = HIGH); supports deterministic timing for pipeline-aligned systems
Data Interface DDR on both read and write ports; transfers 4 × 18-bit words per burst
Supply Voltages VDD = 1.8 V ± 0.1 V; VDDQ = 1.4 V to 1.8 V - supports mixed-voltage board design
I/O Standard HSTL Class I inputs; variable-drive HSTL outputs - ensures signal integrity at 1100 MT/s
On-Die Termination Configurable ODT for D[17:0], BWS[1:0], K/K - eliminates external resistors and reduces routing complexity

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1
Q[17:0] Synchronous read data outputs Driven on rising edges of K/K; valid data indicated by QVLD edge-aligned with CQ/CQ
K / K Differential clock inputs Rising edges control all synchronous operations; K used for RPS/WPS sampling, K for data capture
CQ / CQ Echo clock outputs Free-running, phase-aligned copies of K/K - simplify high-speed data capture in FPGA/ASIC receivers
QVLD Valid data indicator output Asserted synchronously with first valid Q[17:0] word in burst - enables reliable latch timing without fixed delay assumptions
ODT On-die termination control Selects ODT resistance range (RQ/3.33 or RQ/1.66) based on ZQ resistor value - critical for impedance-matched stub-free routing
ZQ Impedance calibration reference Connects to precision resistor to ground; sets output driver and ODT impedance to 0.2 × RQ - ensures consistent signal integrity across voltage/temp

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus frequency by 4× versus single-word access - lowers PCB trace count and routing congestion
Separate read/write ports Enables true concurrent read-write operations - eliminates bus turnaround delays in packet buffering and streaming applications
Programmable ODT Eliminates need for 36 external 50 Ω resistors on D[17:0]/BWS[1:0]/K/K - saves >100 mm² PCB area and improves SI margin
QVLD + echo clocks (CQ/CQ) Provides deterministic data-valid timing reference - removes setup/hold uncertainty in 550 MHz+ interfaces
DOFF-configurable latency Switches between 2.5-cycle (QDR II+) and 1-cycle (QDR I) modes - enables backward compatibility and timing margin optimization

Applications

High-Speed Network Packet Buffering Telecom Line Card Data Buffers

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in 10G/25G switch ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent access and sub-2ns QVLD-aligned data capture.

Use Value: Enables full-duplex line-rate buffering without arbitration stalls, leveraging 400 MHz clock and four-word burst to sustain 14.4 GB/s aggregate bandwidth.

Use Scenario: Buffering time-division multiplexed (TDM) voice/data streams in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic 2.5-cycle read latency and echo-clock-synchronized output for DSP interface timing closure.

Use Value: Guarantees jitter-free data delivery to TI C66x or Xilinx Versal RFSoC using HSTL I/O and programmable ODT for clean 1.5 V signaling.

Multi-Core Processor Cache Coherency Directory Test Equipment Pattern Memory

Use Scenario: Maintaining shared cache state metadata across eight-core ARM Neoverse or RISC-V clusters with atomic update requirements.

IC Role / Device Role / Timing Role: Low-latency, fully coherent SRAM serving as directory tag store with simultaneous read (snoop check) and write (state update) access.

Use Value: Achieves 1.8 ns effective read access time via 2.5-cycle latency and DDR interface - cuts coherency protocol overhead by 35% vs. standard DDR3.

Use Scenario: Storing high-fidelity digital stimulus patterns in automated test equipment (ATE) for SoC validation at 800 Mbps.

IC Role / Device Role / Timing Role: High-reliability burst memory delivering glitch-free pattern sequences with QVLD-confirmed validity and CQ-aligned sampling.

Use Value: Eliminates pattern corruption from clock skew or metastability, supporting <1 ppm error rate at 400 MHz operation with HSTL drive strength tuning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 36-Mbit (2M × 18), 1000 MHz DDR interface, no ODT, 2.5 V core, 324-pin PBGA Lacks on-die termination and echo clocks; requires external termination and tighter layout control Choose when legacy 2.5 V systems require QDR II timing but cannot accommodate 1.8 V core supply.
ISSI IS61WV102418B 18-Mbit (512K × 36), asynchronous interface, 15 ns access, 3.3 V only, SOJ-54 No DDR, no burst, no separate ports - fundamentally different architecture and performance class Consider only for cost-sensitive, low-bandwidth control-plane buffers where QDR timing is unnecessary.

Compared with IDT72T36120L10BG and IS61WV102418B, CY7C25632KV18 uniquely combines 72-Mbit density, 400 MHz DDR bandwidth, ODT, echo clocks, and QVLD in a 1.8 V FBGA package - making it optimal for new high-speed packet processing designs requiring signal integrity and timing determinism.

Availability

CY7C25632KV18 is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card data buffers, multi-core processor cache coherency directories, and test equipment pattern memory requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C25632KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in networking ASICs, FPGAs, and baseband processors where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C25632KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables QDR II+ operation with 2.5-cycle read latency and four-word burst; when LOW, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains static during operation - it does not support dynamic switching.

How does on-die termination (ODT) work on CY7C25632KV18?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an internal switched resistor network. The ODT pin selects between two ranges (RQ/3.33 or RQ/1.66), while ZQ connects to an external precision resistor to ground to calibrate output driver and ODT impedance to 0.2 × RQ - eliminating external resistors and improving signal integrity.

Can CY7C25632KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The datasheet explicitly states VDDQ supports 1.4 V to VDD (1.8 V), including 1.5 V operation. This allows interoperability with 1.5 V FPGA I/O banks while maintaining 1.8 V core logic stability - verified in DC electrical characteristics tables and supported across all speed grades including the -400BZXI variant.

What is the role of CQ and CQ echo clocks in system timing?

CQ and CQ are free-running, phase-aligned copies of K and K clocks, respectively. They provide a local, low-skew timing reference at the receiver to sample Q[17:0] data - decoupling data capture timing from board-level clock distribution skew and enabling robust setup/hold margin at 400 MHz clock rates without complex deskew circuitry.

CY7C25632KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25632KV18-400BZXI FAQ

1.How can I place an order for CY7C25632KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C25632KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25632KV18-400BZXI reliable?

The price and inventory of CY7C25632KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25632KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C25632KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25632KV18-400BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C25632KV18-400BZXI?

CY7C25632KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25632KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25632KV18-400BZXI?

For technical support, including CY7C25632KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25632KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C25632KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C25632KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25632KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C25632KV18-400BZXI?

All CY7C25632KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25632KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25632KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C25632KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C25632KV18-400BZXI Tags

  • CY7C25632KV18-400BZXI
  • CY7C25632KV18-400BZXI PDF
  • CY7C25632KV18-400BZXI Datasheet
  • CY7C25632KV18-400BZXI Specifications
  • CY7C25632KV18-400BZXI Images
  • Infineon Technologies
  • Infineon Technologies CY7C25632KV18-400BZXI
  • Buy CY7C25632KV18-400BZXI
  • CY7C25632KV18-400BZXI Price
  • CY7C25632KV18-400BZXI Distributor
  • CY7C25632KV18-400BZXI Supplier
  • CY7C25632KV18-400BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER