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Infineon Technologies CY7C25632KV18-450BZXI

Part No.:
CY7C25632KV18-450BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25632KV18-450BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,351

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Product details

Overview

CY7C25632KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 450 MHz maximum operating frequency, 2.5-cycle read latency, and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs. It features separate read/write ports, DDR interfaces on both ports (2.2 Gbps effective data rate), and operates at 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric controllers.

For engineers reviewing the CY7C25632KV18 datasheet, CY7C25632KV18 pinout, CY7C25632KV18 application, or CY7C25632KV18 equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, HSTL I/O compatibility, and FBGA-165 package thermal/mechanical constraints for high-speed PCB layout.

Technical Context

The CY7C25632KV18 implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling concurrent access without bus turnaround.

It uses a PLL for precise data placement and supports two latency modes: 2.5-cycle read latency (DOFF = HIGH) and 1-cycle latency (DOFF = LOW). Echo clocks CQ and CQ are free-running, edge-aligned to K/K, and used for source-synchronous data capture in systems requiring sub-nanosecond timing margins.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 organization)
Max Clock Frequency 450 MHz - determines peak bandwidth of 1.62 GB/s (4 words × 18 bits × 450 MHz)
Read Latency 2.5 clock cycles - defines minimum time from RPS assertion to first valid Q[17:0] output
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - enables interoperability with both 1.5 V and 1.8 V HSTL-15/18 systems
On-Die Termination Configurable ODT for D[17:0], BWS[1:0], K/K - eliminates external 50 Ω resistors on critical high-speed inputs
Package 165-ball FBGA (13 × 15 × 1.4 mm) - supports 0.8 mm ball pitch and controlled impedance routing for >500 Mbps per pin
Core Supply VDD = 1.8 V ± 0.1 V - requires low-noise, tightly regulated core rail for stable 450 MHz operation

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Sampled on rising edges of K/K; drives 18-bit parallel data into memory array during WPS-active cycles
Q[17:0] Synchronous read data output Drives bursted 18-bit words on rising edges of K/K; tri-stated when RPS is deasserted
RPS Read port select (active LOW) Initiates 4-word burst read; sampled on rising edge of K; controls Q[17:0] driver enable
WPS Write port select (active LOW) Enables write transaction; sampled on rising edge of K; gates D[17:0] and BWS[1:0] into array
BWS[1:0] Byte write select (active LOW) BWS0 selects D[8:0]; BWS1 selects D[17:9]; enables partial-word writes without read-modify-write overhead
K / K Differential clock inputs Rising edges latch all synchronous inputs; K drives read-side registers, K drives write-side registers
CQ / CQ Echo clock outputs Free-running, source-synchronous clocks aligned to K/K; used by FPGA/ASIC to sample Q[17:0] with minimal skew
QVLD Valid data indicator Asserted coincident with first valid Q[17:0] word in burst; edge-aligned to CQ/CQ for timing closure
ODT On-die termination control Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); floating defaults to high range for 175–250 Ω ZQ resistor
ZQ Impedance calibration reference Connected to precision resistor to ground; sets output driver impedance to 0.2 × RQ for CQ/CQ/Q[17:0]

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling by 75% vs. single-word access - lowers system EMI and simplifies address generation logic
Separate read/write ports Enables true concurrent read and write operations - eliminates bus contention and supports full-duplex traffic in switch buffers
On-die termination (ODT) Eliminates 36 external 50 Ω resistors for D[17:0]/BWS[1:0]/K/K - saves ~120 mm² PCB area and improves signal integrity at 450 MHz
Echo clocks (CQ/CQ) Provides deterministic, low-jitter timing reference for capturing Q[17:0] - removes need for board-level delay tuning or phase-locked capture logic
Programmable read latency DOFF pin selects between 2.5-cycle (high performance) and 1-cycle (legacy QDR I compatibility) modes - enables drop-in upgrade path

Applications

Network Packet Buffering Switch Fabric Controller Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards where latency and throughput are critical.

IC Role / Device Role / Timing Role: High-speed dual-port buffer providing simultaneous header read (for classification) and payload write (from MAC) with zero bus turnaround.

Use Value: 450 MHz clock + four-word burst delivers 1.62 GB/s sustained bandwidth - meets line-rate buffering for 25Gbps links without external arbitration logic.

Use Scenario: Acting as shared memory between multiple scheduler engines and traffic manager ASICs in modular chassis switches.

IC Role / Device Role / Timing Role: Synchronous SRAM with independent RPS/WPS enables concurrent access from multiple masters via port-select arbitration.

Use Value: Separate read/write ports eliminate serialization bottlenecks - sustains >95% utilization under mixed read/write workloads typical in weighted fair queuing.

Telecom Baseband Processing High-Frequency Trading Engine Cache

Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency burst memory interfaced to FPGA-based DSP blocks using source-synchronous CQ/CQ timing.

Use Value: 2.5-cycle read latency + QVLD strobe enables deterministic <8 ns data-valid window - meets tight loop timing in real-time PHY layer processing.

Use Scenario: Ultra-low-latency order book cache in FPGA-accelerated trading platforms requiring microsecond-scale memory access.

IC Role / Device Role / Timing Role: Deterministic SRAM with DOFF-configurable latency used as front-end cache between market data feed parser and execution logic.

Use Value: Configurable 1-cycle mode (DOFF = LOW) achieves 2.22 ns read cycle time - reduces memory-access contribution to end-to-end latency by 40% vs. standard QDR II.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 1000 Mbps DDR interface, no ODT, 1.5 V only I/O, 165-ball FBGA Lacks ODT and echo clocks; requires external termination and clock forwarding; lower density limits burst depth scalability Choose for cost-sensitive designs where 36-Mbit capacity suffices and board-level termination is acceptable
ISSI IS61WV102418BLL-15BLI 18-Mbit (512K × 36), async interface, 15 ns access, 3.3 V only, 100-pin TQFP No DDR, no burst, no separate ports - fundamentally different architecture; 1/4 density and >10× higher latency Only suitable for legacy upgrades where QDR functionality is not required and bandwidth demand is <200 MB/s

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, the CY7C25632KV18 uniquely combines 72-Mbit density, 450 MHz DDR bandwidth, integrated ODT, and echo-clock timing - making it the sole fit for new designs targeting >1 GB/s sustained throughput with deterministic sub-10 ns latency.

Availability

CY7C25632KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric controller memory, telecom baseband processing, and high-frequency trading engine cache requiring stable component supply across multi-year production cycles.

Supply support for CY7C25632KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The QDR® II+ SRAM product line targets high-speed infrastructure systems requiring deterministic latency, concurrent access, and simplified board design - specifically engineered for switch fabric, packet buffer, and baseband memory subsystems.

FAQ

What is the function of the DOFF pin on CY7C25632KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for optimal QDR II+ performance; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled at power-up and remains static during operation - no runtime switching is supported.

How does On-Die Termination (ODT) work on CY7C25632KV18?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an internal resistor network calibrated against the ZQ pin's external reference resistor. ODT range is selected by the ODT pin state (LOW = RQ/3.33; HIGH = RQ/1.66), eliminating need for 36 discrete 50 Ω resistors and reducing PCB routing complexity.

Can CY7C25632KV18 operate with only one clock input?

No - the device requires both K and K differential clock inputs. All synchronous inputs (D[17:0], BWS[1:0], RPS, WPS, A[19:0]) are sampled on rising edges of K or K, and all outputs (Q[17:0], CQ, CQ) are driven relative to these clocks. Using only K or only K violates timing specifications and causes functional failure.

What is the role of the QVLD signal in system timing?

QVLD is a synchronous, edge-aligned output that asserts coincident with the first valid word of a four-word read burst on Q[17:0]. It is timed to align with CQ/CQ edges, providing a reliable strobe for capturing Q[17:0] without additional setup/hold margin calculations - essential for timing closure in 450 MHz FPGA interfaces.

CY7C25632KV18-450BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25632KV18-450BZXI FAQ

1.How can I place an order for CY7C25632KV18-450BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C25632KV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25632KV18-450BZXI reliable?

The price and inventory of CY7C25632KV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25632KV18-450BZXI is usually 5 days.

3.What payment methods are accepted for CY7C25632KV18-450BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25632KV18-450BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C25632KV18-450BZXI?

CY7C25632KV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25632KV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25632KV18-450BZXI?

For technical support, including CY7C25632KV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25632KV18-450BZXI requirements.

6.How does Aetrix verify that CY7C25632KV18-450BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C25632KV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25632KV18-450BZXI meets industry standards.

7.What is the process for return or replacement of CY7C25632KV18-450BZXI?

All CY7C25632KV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25632KV18-450BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25632KV18-450BZXI part is unused and in its original packaging.

Return procedure for CY7C25632KV18-450BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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