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Infineon Technologies CY7C25632KV18-500BZXC

Part No.:
CY7C25632KV18-500BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25632KV18-500BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,133

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Product details

Overview

CY7C25632KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[17:0], BWS[1:0], and K/K inputs. It delivers 1100 MT/s DDR data rates on independent read/write ports and operates at core VDD = 1.8 V ± 0.1 V with I/O VDDQ = 1.4–1.8 V, targeting high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C25632KV18 datasheet, CY7C25632KV18 pinout, CY7C25632KV18 application, or CY7C25632KV18 equivalent, this device supports concurrent read/write transactions, echo-clock–synchronized data capture via CQ/CQ, QVLD-driven valid-data indication, and depth expansion using RPS/WPS port selects - all critical for deterministic low-latency memory subsystems.

Technical Context

The CY7C25632KV18 implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its four-word burst transfers 72 bits per cycle (18-bit × 4), latching addresses on alternating rising edges of complementary K/K clocks while using only rising edges for internal timing.

It integrates an on-chip PLL for precise data placement, HSTL-class I/O buffers with variable drive strength, and programmable ODT with dual-range selection (RQ/3.33 or RQ/1.66) controlled by the ODT pin. The ZQ pin enables output impedance calibration to match system trace impedance, and QVLD provides edge-aligned validity signaling synchronized to CQ/CQ.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR throughput on both ports
Read Latency 2.5 clock cycles - fixed when DOFF = HIGH; supports deterministic timing closure
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.8 V - supports mixed-voltage system interfacing
ODT Support On-die termination for D[17:0], BWS[1:0], K, and K - eliminates external resistors and saves PCB area
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count high-speed memory
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 550 MHz

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; supports byte-write masking via BWS[1:0]
Q[17:0] Synchronous read data output 18-bit parallel data driven on rising edges of K/K; tri-stated when RPS is deasserted
RPS / WPS Read/Write Port Select Active-LOW control signals sampled on K rising edge; enable independent port activation for depth expansion
BWS[1:0] Byte Write Select Active-LOW signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); allow partial-word writes without read-modify-write
K / K Differential clock inputs Complementary clocks used for all synchronous operations; only rising edges drive registers
CQ / CQ Echo clock outputs Free-running clocks synchronized to K/K; simplify high-speed data capture timing in FPGA/ASIC receivers
QVLD Valid data indicator Output pulse edge-aligned with CQ/CQ; asserts exactly when Q[17:0] contains valid burst data
ODT On-die termination control Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); floating defaults to high range
ZQ Impedance calibration reference Connects to external resistor to ground; sets CQ/CQ/Q[17:0] output impedance to 0.2 × RQ

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent access - no arbitration delay or bus turnaround penalty between read and write bursts
Four-word burst architecture Reduces address bus toggling frequency by 4× versus single-word access; lowers EMI and routing complexity
2.5-cycle read latency (DOFF = HIGH) Guarantees predictable timing margin for high-frequency systems; avoids variable latency jitter
Integrated PLL and echo clocks (CQ/CQ) Eliminates need for external clock forwarding ICs; simplifies PCB layout and improves skew tolerance
Programmable ODT + ZQ calibration Removes 36 external termination resistors (D[17:0], BWS[1:0], K, K); reduces BOM cost and board area by >12 mm²

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switching ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: Dedicated burst-access buffer providing simultaneous ingress (write) and egress (read) paths at line rate.

Use Value: 2.5-cycle latency and 1100 MT/s bandwidth ensure sub-100 ns round-trip access for 64-byte packets, meeting IEEE 802.3 back-to-back frame requirements.

Use Scenario: Capturing high-fidelity digital waveforms from multi-GHz ADCs in automated test equipment (ATE).

IC Role / Device Role / Timing Role: High-throughput circular buffer staging raw samples before compression or analysis.

Use Value: Independent DDR read/write ports sustain continuous 550 MHz streaming without dead cycles, enabling real-time 1.1 Gsample/s capture depth.

Telecom Baseband Processing FPGA-Based Protocol Acceleration

Use Scenario: Interfacing between baseband processors and RF front-end FPGAs in 4G/LTE macrocell base stations.

IC Role / Device Role / Timing Role: Low-jitter shared memory for IQ sample exchange with deterministic latency across multiple processing cores.

Use Value: QVLD-synchronized output and echo clocks eliminate setup/hold violations at 550 MHz, reducing timing closure effort by >30% in Xilinx Ultrascale+ designs.

Use Scenario: Offloading TCP/IP or encryption offload engines implemented in Xilinx Versal ACAPs.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory for state tables, session contexts, and packet metadata.

Use Value: On-die termination and ZQ calibration maintain signal integrity across 165-ball FBGA interconnects, enabling stable operation at full 550 MHz without custom PCB stackup adjustments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10PF 36-Mbit QDR II, 350 MHz max, no ODT, ×36 only, 165-ball FBGA Lacks ODT and echo clocks; requires external termination and clock forwarding circuitry Choose if legacy design uses IDT QDR II footprint and lower bandwidth suffices
ISSI IS61WV102418B 18-Mbit asynchronous SRAM, 15 ns access, ×18, SOJ-54; no DDR, no burst, no ODT Non-pipelined, single-port, no clock domain crossing support; 1/30th bandwidth Only suitable for low-speed control-plane buffering where latency determinism is not required

Compared with IDT72T36120L10PF and IS61WV102418B, the CY7C25632KV18 delivers 2.3× higher bandwidth, eliminates 36 external terminators via ODT, and removes clock distribution complexity with integrated echo clocks - making it optimal for new 5G infrastructure and high-end ATE designs demanding deterministic sub-100 ns latency.

Availability

CY7C25632KV18 is available at Aetrix Electronics and suitable for network switching, telecom baseband processing, high-speed test instrumentation, and FPGA-based protocol acceleration requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C25632KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing predictability.

The QDR® II+ SRAM product line targets deterministic, high-bandwidth memory interfaces in ASIC/FPGA-based systems where concurrent read/write, low latency, and simplified PCB routing are mandatory - especially in packet-processing and real-time test equipment.

FAQ

What is the function of the DOFF pin on CY7C25632KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for maximum bandwidth and timing margin; when LOW, it reverts to 1-cycle latency like QDR I devices. This pin is sampled at power-up and remains static during operation - it is not a runtime control signal.

How does the ZQ pin affect output driver impedance?

The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, enabling automatic calibration of CQ, CQ, and Q[17:0] output drivers to 0.2 × RQ (e.g., 48 Ω). This ensures consistent signal integrity across voltage/temperature variations and eliminates manual drive-strength tuning in high-speed layouts.

Can CY7C25632KV18 be used with a single-ended clock source?

No - the device requires true differential K/K clock inputs. Driving K with a clock signal and tying K to a fixed voltage violates timing specifications and disables proper DDR operation. A dedicated differential clock generator or FPGA clock buffer with LVDS/HSTL output must be used.

What happens to Q[17:0] when RPS is deasserted?

When RPS is deasserted (HIGH), the read port is deselected and Q[17:0] drivers enter high-impedance (tri-state) mode on the next rising edge of K. Pending read bursts complete before tri-state activation, ensuring no partial or corrupted data is driven onto the bus during port disable transitions.

CY7C25632KV18-500BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25632KV18-500BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C25632KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C25632KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25632KV18-500BZXC is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25632KV18-500BZXC?

For technical support, including CY7C25632KV18-500BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25632KV18-500BZXC requirements.

6.How does Aetrix verify that CY7C25632KV18-500BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C25632KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25632KV18-500BZXC meets industry standards.

7.What is the process for return or replacement of CY7C25632KV18-500BZXC?

All CY7C25632KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25632KV18-500BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25632KV18-500BZXC part is unused and in its original packaging.

Return procedure for CY7C25632KV18-500BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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