Infineon Technologies CY7C2563KV18-450BZXI

Overview

CY7C2563KV18-450BZXI from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR®II+ SRAM with 4-word burst, 2.5-cycle read latency, on-die termination (ODT), and DDR interfaces on independent read/write ports. It operates at 450 MHz (900 MT/s effective data rate), supports HSTL I/O, and uses a 165-ball FBGA (13 × 15 × 1.4 mm) package. It is used in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C2563KV18-450BZXI datasheet, CY7C2563KV18-450BZXI pinout, CY7C2563KV18-450BZXI application, or CY7C2563KV18-450BZXI equivalent, key selection criteria include 450 MHz clock frequency, 18-bit data width, ODT support on D[17:0]/BWS[1:0]/K/K inputs, echo clocks (CQ/CQ), and QVLD timing control for reliable high-speed data capture.

Technical Context

This device implements QDR II+ architecture with fully independent synchronous read and write ports sharing a multiplexed address bus. Read and write operations are latched on alternate rising edges of the K clock, enabling concurrent access without bus turnaround.

The internal PLL synchronizes echo clocks (CQ/CQ) to output data edges, while DOFF pin selects between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes. On-die termination applies to all data, byte-write-select, and clock inputs, eliminating external resistors and reducing signal integrity complexity.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed QDR SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C2563KV18-450BZXI uniquely delivers 72-Mbit density with integrated ODT, echo clocks, and deterministic 2.5-cycle latency-enabling simpler, higher-bandwidth designs in networking and signal processing.

Availability

CY7C2563KV18-450BZXI is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor memory, and LTE baseband processing requiring stable component supply across extended production lifecycles.

Supply support for CY7C2563KV18-450BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

This device belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic, concurrent-access memory subsystems in multi-gigabit networking and real-time signal processing equipment.

FAQ

What is the function of the DOFF pin on CY7C2563KV18-450BZXI?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for optimal timing margin in high-frequency systems; when LOW, it reverts to 1-cycle latency like standard QDR-I devices. This setting is sampled at power-up and determines internal pipeline depth-no runtime reconfiguration is supported.

How does On-Die Termination (ODT) operate on this SRAM?

ODT applies programmable 50 Ω termination to D[17:0], BWS[1:0], and K/K inputs when the ODT pin is asserted. It eliminates the need for 24 discrete 50 Ω resistors, reduces PCB layer count, and improves signal integrity at 450 MHz by minimizing stub reflections-critical for maintaining eye diagram margins in dense routing environments.

Can CY7C2563KV18-450BZXI be used with a 1.5 V VDDQ supply?

Yes-VDDQ is specified from 1.4 V to 1.8 V, fully supporting 1.5 V operation. HSTL Class I input thresholds and variable-drive outputs maintain signal integrity across this range. Using 1.5 V VDDQ reduces I/O power consumption by ~20% versus 1.8 V while preserving timing compliance per AC specs in the datasheet.

What is the role of CQ and CQ echo clocks?

CQ and CQ are output-synchronized copies of the K and K input clocks, phase-aligned to Q[17:0] data edges. They eliminate clock-to-out skew in high-speed receivers, allowing FPGA or ASIC capture logic to use them directly for data sampling-removing the need for complex deskew circuitry or dynamic phase adjustment.