Infineon Technologies CY7C2563XV18-600BZC

Overview

CY7C2563XV18 from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 2.5-cycle read latency (DOFF = HIGH), 600 MHz clock operation, and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs-designed for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C2563XV18 datasheet, CY7C2563XV18 pinout, CY7C2563XV18 application, or CY7C2563XV18 equivalent, key selection criteria include DDR read/write throughput at 1200 Mbps, HSTL I/O compatibility, echo clock (CQ/CQ) timing support, and FBGA-165 package constraints for dense PCB layouts.

Technical Context

This SRAM implements QDR II+ architecture with fully independent synchronous read and write ports, enabling true concurrent transactions without bus turnaround. It uses dual input clocks (K and K) - both rising edges sampled - and echo clocks (CQ/CQ) aligned to output data for precise capture in high-speed systems.

The device supports programmable ODT via the ODT pin and external ZQ resistor, selecting either RQ/3.33 (low range) or RQ/1.66 (high range) termination impedance. Read latency is configurable: 2.5 cycles (DOFF = HIGH) for QDR II+ mode or 1 cycle (DOFF = LOW) emulating QDR I behavior.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C2563XV18 delivers 4× higher density, 12× higher effective bandwidth, and hardware-enforced concurrency - making it irreplaceable in line-rate networking and 5G baseband applications requiring simultaneous read/write at 600 MHz.

Availability

CY7C2563XV18 is available at Aetrix Electronics and suitable for high-speed network switch buffering, telecom line card packet memory, and 5G radio unit baseband processing requiring stable component supply across multi-year production cycles.

Supply support for CY7C2563XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C2563XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in packet-processing and baseband subsystems.

FAQ

What is the function of the DOFF pin on CY7C2563XV18?

The DOFF (Disable Output Fast Flag) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle QDR II+ mode; when LOW or tied to VSS, it reverts to 1-cycle QDR I behavior. This pin is sampled at power-up and remains latched - no runtime switching is supported. Its state directly determines burst timing alignment and must match system controller expectations.

Can CY7C2563XV18 operate with only one clock input (K only)?

No. The device requires both K and K differential clock inputs - both are sampled on rising edges for data capture and output timing. Using only K violates AC timing specifications and causes undefined behavior on write data sampling and read data validity. The K input is mandatory for proper DDR operation and echo clock generation.

How does on-die termination (ODT) work on CY7C2563XV18?

ODT is enabled via the ODT pin and calibrated using the ZQ pin connected to a 240 Ω resistor. ODT applies to D[17:0], BWS[1:0], and K/K inputs. ODT pin state selects termination range: LOW → RQ/3.33 (~72 Ω); HIGH → RQ/1.66 (~144 Ω). No external resistors are needed on these nets when ODT is active.

Is CY7C2563XV18 pin-compatible with earlier QDR II devices?

No. While functionally similar to QDR II SRAMs, CY7C2563XV18 uses a 165-ball FBGA package with different pin assignments - especially for echo clocks (CQ/CQ), QVLD, DOFF, and ZQ - and adds ODT control. Migration requires PCB redesign and timing validation; it is not a drop-in replacement for CY7C1315 or similar QDR II parts.