Infineon Technologies CY7C2563XV18-633BZC

Overview

CY7C2563XV18-633BZC from Cypress Semiconductor is a 72-Mbit QDR® II+ Xtreme SRAM with 4M × 18 organization, 633 MHz clock frequency, 2.5-cycle read latency (DOFF = HIGH), and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs. It delivers 1266 MT/s DDR throughput on separate read/write ports and operates at 1.8 V core / 1.5 V I/O in high-speed networking packet buffers.

For engineers reviewing the CY7C2563XV18-633BZC datasheet, CY7C2563XV18-633BZC pinout, CY7C2563XV18-633BZC application, or CY7C2563XV18-633BZC equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD data validity signaling, HSTL I/O compatibility, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This SRAM implements true dual-port synchronous pipelined architecture with independent read and write data paths-no bus turnaround required. It uses two input clocks (K and K) sampled only on rising edges, with echo clocks (CQ and CQ) phase-aligned to simplify high-speed capture at 1266 MT/s.

The device supports programmable ODT via ZQ calibration and ODT pin logic level, enabling impedance matching for D[17:0], BWS[1:0], and K/K without external resistors. Read latency is configurable: 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), matching QDR I behavior for legacy compatibility.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Compared with IDT72T3615L10PFI and IS61WV102418BLL-10BLI, CY7C2563XV18-633BZC provides 4× higher density, 2.5× higher bandwidth, integrated ODT, and deterministic echo-clock timing-making it uniquely suited for line-rate packet buffering where bus turnaround and signal integrity dominate design trade-offs.

Availability

CY7C2563XV18-633BZC is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, baseband processor caches, and FPGA co-processor memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C2563XV18-633BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

CY7C2563XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for ultra-low-latency, high-throughput data buffering in networking, wireless infrastructure, and high-end test equipment.

FAQ

What is the function of the DOFF pin on CY7C2563XV18-633BZC?

The DOFF (Disable Output Fast Flag) pin configures read latency mode: when asserted HIGH, the device operates in QDR II+ Xtreme mode with 2.5-cycle read latency and maximum bandwidth; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency for backward compatibility. This pin is sampled at power-up and remains static during operation.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled via the ODT pin and calibrated against an external 240 Ω resistor on the ZQ pin. A LOW on ODT selects RQ/3.33 (~175–350 Ω range); HIGH selects RQ/1.66 (~175–250 Ω). ODT applies to D[17:0], BWS[1:0], and K/K inputs only-reducing stub reflections and eliminating four to six external 33–50 Ω resistors per interface.

Can CY7C2563XV18-633BZC be used with a 1.35 V I/O supply?

No. The device specifies I/O VDDQ = 1.4 V to 1.6 V per datasheet Rev. *G. Operation below 1.4 V violates DC electrical characteristics-including setup/hold margins, output drive strength, and ODT accuracy-and may cause intermittent read failures or timing violations at 633 MHz.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned output copies of the K and K input clocks. They provide a clean, low-jitter timing reference synchronized to internal data launch edges-enabling reliable capture of Q[17:0] at 1266 MT/s without complex PCB delay tuning or fly-by routing. QVLD aligns precisely with their rising edges.