Infineon Technologies CY7C2564XV18-366BZC
- Part No.:
- CY7C2564XV18-366BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2564XV18-366BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,368
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Product details
Overview
CY7C2564XV18-366BZC from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with 2.5-cycle read latency, 450 MHz clock support, DDR interfaces on both ports (900 Mbps effective data rate), and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C2564XV18-366BZC datasheet, CY7C2564XV18-366BZC pinout, CY7C2564XV18-366BZC application, or CY7C2564XV18-366BZC equivalent, key selection factors include its 2M × 36 configuration, 165-ball FBGA package, HSTL I/O compatibility, DOFF-configurable latency (1-cycle or 2.5-cycle), and JTAG 1149.1 test access support.
Technical Context
This SRAM implements a true dual-port synchronous architecture with physically separate read and write data paths-eliminating bus turnaround and enabling concurrent read/write operations without arbitration. Its two-word burst transfers per cycle and echo clocks (CQ/CQ) align output data precisely to system timing requirements.
The device integrates a PLL for accurate data placement, supports programmable ODT via ZQ calibration and ODT pin logic level, and uses independent K/K clocks sampled only on rising edges-ensuring deterministic DDR timing at 450 MHz while maintaining full data coherency across both ports.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s effective throughput on each port |
| Read Latency | 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable real-time latency mode |
| I/O Voltage | VDDQ = 1.4 V to 1.6 V - compatible with 1.5 V HSTL signaling |
| Core Voltage | VDD = 1.8 V ± 0.1 V - low-power 1.8 V core operation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory |
| Termination | On-die termination (ODT) for D[35:0], BWS[3:0], K/K - eliminates external resistors and routing complexity |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data latched on rising edge of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel data driven on rising edge of K/K; tristated when RPS inactive |
| RPS / WPS | Read/Write port select | Active-low control signals sampled on K clock edge; enable independent port activation |
| BWS[3:0] | Byte write select | Four active-low signals controlling 9-bit byte lanes (D[8:0]–D[35:27]); allows partial-word updates |
| K / K | Dual-phase input clocks | Rising-edge-triggered clocks for all synchronous inputs; K used for read address, K for write address |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K; simplify high-speed data capture timing |
| QVLD | Data validity indicator | Output pulse edge-aligned with CQ/CQ; asserts exactly when Q[35:0] contains valid read data |
| ODT | On-die termination control | Logic-level input selecting ODT resistance range (RQ/3.33 or RQ/1.66); defaults to high range if floating |
| ZQ | Impedance calibration reference | External precision resistor (175–350 Ω) sets ODT value; calibrated at power-up |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Delivers two 36-bit words per clock cycle-reducing address bus frequency by 2× versus single-word devices |
| Separate read/write data paths | Enables true concurrent transactions without bus contention or turnaround delays-critical for full-duplex traffic buffers |
| Configurable read latency | DOFF pin selects between 1-cycle (QDR I mode) and 2.5-cycle (QDR II+ mode) latency-enabling trade-off between timing margin and throughput |
| HSTL-compatible I/O | Supports 1.5 V HSTL Class I inputs and variable-drive outputs-ensures signal integrity at 450 MHz with minimal board-level termination |
| JTAG 1149.1 compliance | Full boundary-scan test access for production verification and debug-no additional test pads required |
Applications
| High-Speed Network Line Cards | Telecom Baseband Processing |
|---|---|
Use Scenario: Buffering bidirectional packet streams in 10G/40G Ethernet switch fabric ASIC interfaces. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong FIFO between ingress and egress pipelines with zero bus turnaround overhead. Use Value: 900 MT/s per port sustains full line-rate throughput; ODT and echo clocks ensure setup/hold compliance at 450 MHz. | Use Scenario: Storing interleaved I/Q samples in LTE/5G baseband modems during FFT/IFFT processing. IC Role / Device Role / Timing Role: High-coherency memory staging buffer synchronized to FPGA fabric clocks via K/K and CQ/CQ. Use Value: 2.5-cycle latency mode provides timing margin for complex DSP pipelines; 1.8 V core reduces thermal load in dense RF modules. |
| Test Equipment Memory Subsystems | Avionics Data Acquisition Units |
Use Scenario: Capturing high-resolution waveform data in real-time digital storage oscilloscopes with deep memory depth. IC Role / Device Role / Timing Role: Burst-mode acquisition buffer feeding ADC front-end and post-processing engine simultaneously. Use Value: Concurrent read/write allows continuous capture while background analysis proceeds-no dead time between triggers. | Use Scenario: Storing time-stamped sensor telemetry in flight data recorders requiring deterministic latency and radiation tolerance. IC Role / Device Role / Timing Role: Radiation-hardened-adjacent memory buffer with JTAG scan for in-system diagnostics and configuration validation. Use Value: Neutron soft error immunity (documented in datasheet) plus 1.8 V core improves FIT rate over commercial alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-bit QDR II+ SRAM, 1000 MHz interface (500 MHz clock), same 165-ball FBGA but 1.5 V core/VDDQ | Higher speed grade; requires tighter PCB layout and stricter power delivery due to 500 MHz clock | Select when >450 MHz bandwidth is mandatory and system timing budget permits tighter margins |
| ISSI IS61WV102432BLL-15BLI | 1M × 32 sync SRAM, 15 ns access, single-ended LVCMOS I/O, no ODT or echo clocks | Lacks concurrent read/write; limited to 66 MHz max clock; no DDR interface or burst capability | Select only for cost-sensitive, lower-bandwidth control-plane buffering where QDR features are unnecessary |
Compared with IDT72T36120L10BG and IS61WV102432BLL-15BLI, CY7C2564XV18-366BZC uniquely balances 450 MHz operation, 2.5-cycle configurable latency, integrated ODT, and JTAG testability-making it optimal for mid-tier telecom and test equipment where reliability, timing flexibility, and debug readiness are prioritized over peak speed.
Availability
CY7C2564XV18-366BZC is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, test equipment memory subsystems, and avionics data acquisition units requiring stable component supply and long-term lifecycle support.
Supply support for CY7C2564XV18-366BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and system-level integration.
CY7C2564XV18 belongs to the QDR® II+ Xtreme SRAM product line-engineered specifically for deterministic, low-latency, high-throughput buffering in full-duplex communication infrastructure where bus turnaround elimination is critical.
FAQ
What is the function of the DOFF pin on CY7C2564XV18-366BZC?
The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains latched until reset, enabling runtime latency tuning without firmware changes.
How does on-die termination (ODT) work on this SRAM?
ODT is enabled via the ODT pin and calibrated using an external ZQ resistor (175–350 Ω). When ODT is active, it applies programmable termination to D[35:0], BWS[3:0], and K/K inputs-replacing up to 72 external resistors. The ODT resistance value is either RQ/3.33 (low range) or RQ/1.66 (high range), selected by the logic level on the ODT pin at power-up.
Can CY7C2564XV18-366BZC be used with a 366 MHz clock?
Yes-the "366" in the part number denotes qualification at 366 MHz, but the device is fully rated for 450 MHz operation per datasheet Rev. *G. At 366 MHz, it delivers 732 MT/s per port with relaxed timing margins, making it suitable for systems where thermal or layout constraints prevent full 450 MHz utilization while retaining QDR II+ feature set.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned output clocks synchronized to K and K respectively. They provide precise timing references for capturing Q[35:0] data in high-speed receivers-eliminating need for internal delay-locked loops or complex deskew circuitry. Their edge alignment with QVLD ensures unambiguous data-valid window detection.
CY7C2564XV18-366BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 366 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2564XV18-366BZC FAQ
1.How can I place an order for CY7C2564XV18-366BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2564XV18-366BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2564XV18-366BZC reliable?
The price and inventory of CY7C2564XV18-366BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2564XV18-366BZC is usually 5 days.
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Once your CY7C2564XV18-366BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2564XV18-366BZC?
For technical support, including CY7C2564XV18-366BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2564XV18-366BZC requirements.
6.How does Aetrix verify that CY7C2564XV18-366BZC is sourced from the original manufacturer or authorized distributors?
All CY7C2564XV18-366BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2564XV18-366BZC meets industry standards.
7.What is the process for return or replacement of CY7C2564XV18-366BZC?
All CY7C2564XV18-366BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2564XV18-366BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2564XV18-366BZC part is unused and in its original packaging.
Return procedure for CY7C2564XV18-366BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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