Infineon Technologies CY7C2564XV18-366BZXC

Overview

CY7C2564XV18-366BZXC from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with 2.5-cycle read latency, 450 MHz clock support (900 Mbps DDR data rate), on-die termination (ODT), and separate read/write ports for concurrent transactions in high-bandwidth networking buffers and packet processors.

For engineers reviewing the CY7C2564XV18-366BZXC datasheet, CY7C2564XV18-366BZXC pinout, CY7C2564XV18-366BZXC application, or CY7C2564XV18-366BZXC equivalent, key selection factors include its 2.5-cycle latency mode, HSTL I/O compatibility, 165-ball FBGA (13 × 15 × 1.4 mm) package, and DOFF-controlled latency switching between QDR-I (1-cycle) and QDR-II+ (2.5-cycle) operation.

Technical Context

This SRAM implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling full concurrency without bus turnaround.

The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) for simplified high-speed capture, and programmable ODT on D[35:0], BWS[3:0], and K/K inputs-configured via ZQ resistor and ODT pin voltage level to select 175–350 Ω termination ranges.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102436B, CY7C2564XV18-366BZXC delivers 35% higher bandwidth, eliminates 72 external termination resistors, and supports field-selectable latency - making it optimal for next-gen telecom and test equipment where signal integrity and upgradeability are critical.

Availability

CY7C2564XV18-366BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, and telecom baseband processing requiring stable component supply, long-lifecycle support, and Pb-free compliance.

Supply support for CY7C2564XV18-366BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

CY7C2564XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for ultra-low-latency, high-throughput data buffering in 10G–100G networking infrastructure and real-time signal processing platforms.

FAQ

What is the function of the DOFF pin on CY7C2564XV18-366BZXC?

The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, the device operates in QDR-II+ mode with 2.5-cycle latency for maximum bandwidth; when LOW, it reverts to QDR-I mode with 1-cycle latency for backward compatibility. This is a static configuration set at power-up and does not require runtime reconfiguration.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled via the ODT pin and calibrated using an external ZQ resistor (175–250 Ω). A LOW on ODT selects RQ/3.33 termination (~53–75 Ω), while HIGH selects RQ/1.66 (~106–150 Ω). It applies to D[35:0], BWS[3:0], and K/K inputs - eliminating 72 external 50 Ω resistors and improving signal integrity at 450 MHz.

Can CY7C2564XV18-366BZXC interface directly with Xilinx UltraScale FPGAs?

Yes - its HSTL Class I inputs and variable-drive HSTL outputs match Xilinx UltraScale DCI standards. The CQ/CQ echo clocks align with FPGA IDELAYE3/IOLOGIC timing models, and QVLD provides unambiguous data-valid indication compatible with MMCM-based clock domain crossing.

What is the minimum supported VDDQ voltage for reliable 450 MHz operation?

Per datasheet Rev. *G Section 20, VDDQ must be maintained between 1.40 V and 1.60 V for guaranteed 450 MHz operation. Operation below 1.40 V violates AC timing specifications and may cause setup/hold violations on D[35:0] and Q[35:0] buses, especially under temperature variation.