Infineon Technologies CY7C2564XV18-450BZXC
- Part No.:
- CY7C2564XV18-450BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2564XV18-450BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2564XV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 450 MHz clock operation (900 Mbps DDR data rate), 2.5-cycle read latency when DOFF = HIGH, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C2564XV18 datasheet, CY7C2564XV18 pinout, CY7C2564XV18 application, or CY7C2564XV18 equivalent, key selection criteria include burst depth (two 36-bit words per access), HSTL I/O compatibility (VDDQ = 1.4–1.6 V), echo clock support (CQ/CQ) for timing margining, and JTAG 1149.1 test access for production validation.
Technical Context
This SRAM implements QDR II+ architecture with fully independent synchronous read and write ports sharing a multiplexed 20-bit address bus. Each port uses dedicated DDR interfaces synchronized to complementary K/K clocks, enabling concurrent read and write operations without bus turnaround.
The device integrates a PLL for precise data placement, supports programmable ODT via ZQ calibration and ODT pin logic level, and delivers valid output data aligned with echo clocks CQ/CQ while asserting QVLD. Depth expansion is enabled via RPS/WPS controls and byte-write select (BWS[3:0]) granularity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 450 MHz - enables 900 Mbps DDR data transfer per port |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-synchronized systems |
| I/O Voltage | VDDQ = 1.4 V to 1.6 V - compatible with 1.5 V HSTL-18 signaling |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, reduces PCB routing complexity |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory modules |
| JTAG Support | IEEE 1149.1 compliant TAP - enables boundary scan testing and production diagnostics |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edges of K/K; supports byte-select writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel output aligned to CQ/CQ; tristated when RPS is deasserted |
| RPS / WPS | Port enable control | Active-low signals selecting read or write port independently - enables true concurrency |
| BWS[3:0] | Byte write select | Four independent active-low controls for 9-bit byte groups - preserves unselected data during partial writes |
| K / K | Differential clock inputs | Rising-edge-triggered clocks for all synchronous inputs/outputs; K used for read, K for write |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of K/K - simplify high-speed data capture at receiver |
| QVLD | Data validity indicator | Asserted synchronously with CQ/CQ rising edge - confirms Q[35:0] contains valid burst data |
| ODT | On-die termination select | Logic-level input configuring ODT resistance range (RQ/3.33 or RQ/1.66) during power-up initialization |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Delivers two sequential 36-bit words per access - halves effective address bus frequency vs. single-word devices |
| Separate read/write data paths | Eliminates bidirectional bus turnaround delays - enables full-duplex operation without arbitration overhead |
| Programmable ODT with ZQ calibration | Reduces signal integrity risk by matching trace impedance - removes need for 16 external 50 Ω resistors on data/control lines |
| PLL-based data alignment | Ensures <±50 ps skew between Q[35:0] and CQ/CQ - supports reliable sampling at 450 MHz clock rates |
| DOFF-configurable latency mode | Selects between QDR II+ (2.5-cycle) and QDR I (1-cycle) read latency - allows trade-off between throughput and timing margin |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet line cards with real-time traffic shaping. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking buffer between MAC and switch fabric - reads and writes occur concurrently on same clock cycle. Use Value: 900 Mbps DDR bandwidth per port sustains full line-rate throughput; ODT eliminates stub reflections on dense backplane traces. |
Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: High-speed acquisition memory interfacing directly to ADC/DAC controllers - K/K clocks align sample capture and replay timing. Use Value: Echo clocks CQ/CQ provide deterministic setup/hold margins for FPGA-based capture logic; QVLD confirms valid sample window. |
| Telecom Baseband Processing | Real-Time Video Frame Buffering |
|
Use Scenario: Temporary storage of OFDM symbol data between FFT processing stages in LTE/5G baseband units. IC Role / Device Role / Timing Role: Burst-access memory supporting pipelined symbol processing - two-word burst matches symbol payload size. Use Value: 2.5-cycle latency ensures predictable pipeline depth; HSTL-18 I/O minimizes crosstalk in multi-channel RF subsystems. |
Use Scenario: Interfacing between image sensor interface and video processor in broadcast-grade camera systems operating at 4K60. IC Role / Device Role / Timing Role: Frame buffer SRAM accepting parallel pixel streams from dual sensors - RPS/WPS enables simultaneous read/write of adjacent frames. Use Value: Independent port selects allow seamless frame flipping without CPU intervention; BWS[3:0] supports partial frame updates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit (1M × 36), 333 MHz max clock, no ODT, LVDS I/O (2.5 V), 1-cycle fixed latency | Limited to lower bandwidth; requires external termination; incompatible voltage domain | Choose only if system operates below 333 MHz and already uses LVDS infrastructure |
| ISSI IS61WV102432BLL-15BLI | 32-Mbit (1M × 32), 15 ns async access, single-port, CMOS I/O (3.3 V), no DDR or echo clocks | No concurrent access capability; lacks timing features for high-speed synchronous systems | Acceptable only for cost-sensitive, low-throughput legacy designs where QDR features are unused |
Compared with IDT72T36120L10BG and IS61WV102432BLL-15BLI, CY7C2564XV18 provides 2× memory density, 35% higher bandwidth, integrated ODT for cleaner signal integrity, and echo clocks for robust high-speed capture - making it uniquely suited for new 450 MHz synchronous designs.
Availability
CY7C2564XV18 is available at Aetrix Electronics and suitable for network line cards, high-speed test instrumentation, telecom baseband units, and broadcast video systems requiring stable component supply across multi-year production cycles.
Supply support for CY7C2564XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C2564XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched and real-time signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C2564XV18?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains static during operation - no runtime switching is supported.
How does on-die termination (ODT) work on CY7C2564XV18?
ODT is enabled via the ODT pin and calibrated using an external 240 Ω resistor on the ZQ pin. A LOW on ODT selects RQ/3.33 (~72 Ω), while HIGH selects RQ/1.66 (~144 Ω). ODT applies only to D[35:0], BWS[3:0], and K/K inputs - not outputs - and is active after power-up initialization completes.
Can CY7C2564XV18 be used with a single-ended clock source?
No - the device requires differential K/K clock inputs. Driving K with a clock signal and tying K to a fixed logic level violates timing specifications and disables proper DDR operation. A dedicated differential clock generator or transformer is required to meet setup/hold requirements for both edges.
What is the purpose of the QVLD signal?
QVLD is a synchronous output that asserts one cycle before valid data appears on Q[35:0], aligned to the rising edge of CQ/CQ. It indicates that the current burst word is ready for sampling - critical for FPGA-based receivers implementing dynamic deskew or adaptive sampling windows in high-speed interfaces.
CY7C2564XV18-450BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2564XV18-450BZXC FAQ
1.How can I place an order for CY7C2564XV18-450BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2564XV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C2564XV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2564XV18-450BZXC is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C2564XV18-450BZXC?
For technical support, including CY7C2564XV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2564XV18-450BZXC requirements.
6.How does Aetrix verify that CY7C2564XV18-450BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2564XV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2564XV18-450BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2564XV18-450BZXC?
All CY7C2564XV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2564XV18-450BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2564XV18-450BZXC part is unused and in its original packaging.
Return procedure for CY7C2564XV18-450BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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