Infineon Technologies CY7C2564XV18-450BZXI
- Part No.:
- CY7C2564XV18-450BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2564XV18-450BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2564XV18-450BZXI from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with 450 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs. It features separate read/write ports, DDR interfaces on both ports (900 Mbps effective data rate), and HSTL I/O supporting 1.5 V VDDQ. Used in high-bandwidth network packet buffering and FPGA co-processor memory subsystems.
For engineers reviewing the CY7C2564XV18-450BZXI datasheet, CY7C2564XV18-450BZXI pinout, CY7C2564XV18-450BZXI application, or CY7C2564XV18-450BZXI equivalent, key selection criteria include 2.5-cycle vs. 1-cycle latency mode (DOFF-controlled), ODT impedance configuration via ZQ/ODT pins, echo clock timing alignment (CQ/CQ), and 165-ball FBGA package compatibility with high-speed PCB layout constraints.
Technical Context
This SRAM implements QDR II+ architecture with fully independent synchronous read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K and K clocks, enabling concurrent access without bus turnaround. The internal PLL ensures precise data placement relative to echo clocks CQ and CQ.
Read operations deliver two sequential 36-bit words per access with 2.5-cycle latency when DOFF = HIGH; switching to 1-cycle latency (QDR I mode) when DOFF = LOW. On-die termination supports programmable input impedance (175–350 Ω range) via external ZQ resistor and ODT pin state, eliminating need for discrete termination resistors on D, BWS, and clock lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s DDR data transfers on both ports |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned burst reads |
| VDD / VDDQ | Core: 1.8 V ±0.1 V; I/O: 1.4–1.6 V - supports 1.5 V HSTL signaling with low noise margin |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - reduces PCB routing complexity and signal integrity risk |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - compatible with FPGA and ASIC memory controllers |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction (BZXI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edges of K/K; full 36-bit parallel write path with byte-select control via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of K/K; two-word burst delivers 72 bits per read cycle |
| A[19:0] | Multiplexed address inputs | 20-bit bus latched alternately for read/write addresses - reduces pin count vs. dual-bus architecture |
| K / K | Differential clock inputs | Rising-edge-triggered for all synchronous operations; K used for read port, K for write port |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K - simplify high-speed data capture in FPGA receivers |
| QVLD | Data validity indicator | Edge-aligned with CQ/CQ - enables reliable strobing of valid Q[35:0] output without setup/hold margin guesswork |
| ODT | On-die termination control | Selects RQ/3.33 (LOW) or RQ/1.66 (HIGH) termination ratio - sets input impedance matching for signal integrity |
| ZQ | Impedance reference | Connects to external 240 Ω ±1% resistor to ground - calibrates ODT resistance across voltage/temperature |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Delivers 72 bits per read/write cycle - halves required address transitions vs. single-word devices |
| Separate read/write data paths | Eliminates bidirectional bus turnaround delay - enables true concurrent read+write at full bandwidth |
| Programmable read latency mode | DOFF pin selects 2.5-cycle (Xtreme) or 1-cycle (QDR I) latency - allows trade-off between throughput and timing margin |
| Integrated ODT with ZQ calibration | Removes 72 external 33–50 Ω resistors - saves >200 mm² PCB area and simplifies layout for 36-bit data bus |
| JTAG 1149.1 boundary scan | Enables production test and debug of solder joint integrity on dense FBGA - critical for telecom and networking boards |
Applications
| Network Packet Buffering | FPGA Co-Processor Memory |
|---|---|
Use Scenario: Storing ingress/egress packets in 10G/25G Ethernet line cards with strict latency budgets. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory between MAC and traffic manager ASICs. Use Value: 900 MT/s DDR interface and 2.5-cycle latency enable real-time packet classification without stall cycles. | Use Scenario: Providing scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based acceleration engines. IC Role / Device Role / Timing Role: Off-chip burst memory supplementing limited on-die BRAM, synchronized to FPGA clock domains via CQ/CQ. Use Value: Echo clocks eliminate FPGA input deskew logic; ODT removes need for external termination on 36-bit data bus. |
| Telecom Baseband Processing | High-Frequency Trading Systems |
Use Scenario: Interfacing with multi-core DSPs in 4G/5G baseband units requiring deterministic memory access. IC Role / Device Role / Timing Role: Low-jitter, pipelined SRAM for FFT buffer and channel estimation tables. Use Value: PLL-synchronized data placement and QVLD signal ensure cycle-accurate data capture under varying temperature. | Use Scenario: Ultra-low-latency order book caching in FPGA-accelerated trading platforms. IC Role / Device Role / Timing Role: Deterministic-access memory for market data feed processing pipelines. Use Value: 2.5-cycle latency mode guarantees sub-6 ns read response time at 450 MHz - critical for microsecond-scale decision loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256P-15JIN | Asynchronous 36-bit SRAM, 15 ns access, no DDR or ODT | Lacks concurrent read/write, no echo clocks or latency programming | Only suitable for non-pipelined, lower-bandwidth systems where timing determinism is not required |
| MT47H64M16HR-37E | DDR2 SDRAM, 1 Gbit, 375 MHz clock, 3–3–3 timing | Requires refresh, command/address bus overhead, no true dual-port capability | Appropriate only when cost-per-bit outweighs latency and concurrency requirements |
Compared with AS7C36256P-15JIN and MT47H64M16HR-37E, CY7C2564XV18-450BZXI uniquely delivers deterministic 2.5-cycle latency, true dual-port concurrency, and integrated ODT - essential for FPGA-ASIC interconnects demanding sub-7 ns read response and zero bus turnaround penalty.
Availability
CY7C2564XV18-450BZXI is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and telecom baseband processing requiring stable component supply across extended product lifecycles.
Supply support for CY7C2564XV18-450BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.
This device belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA- and ASIC-based networking and signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C2564XV18-450BZXI?
The DOFF (Data-Off) pin controls read latency mode: when HIGH, the device operates in QDR II+ Xtreme mode with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains latched during operation, enabling system-level optimization between bandwidth and timing margin.
How does the ZQ pin interact with the ODT feature?
The ZQ pin connects to an external 240 Ω ±1% resistor to ground, providing the reference for on-die termination calibration. During power-up initialization, the device measures this resistor and scales internal termination impedances accordingly - selecting either RQ/3.33 (ODT = LOW) or RQ/1.66 (ODT = HIGH) - ensuring accurate impedance matching across voltage and temperature variations.
Can CY7C2564XV18-450BZXI be used with a 1.8 V-only supply?
No. The device requires two independent supplies: core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.6 V (typically 1.5 V). Using 1.8 V on VDDQ violates absolute maximum ratings and will damage HSTL output buffers. Separate regulation is mandatory to meet HSTL Class I input thresholds and drive strength specifications.
What is the purpose of the CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They provide a clean, low-skew timing reference at the receiver (e.g., FPGA input register) to capture Q[35:0] data without requiring complex input delay tuning. Their edge alignment with QVLD enables robust, margin-insensitive data sampling in 450 MHz DDR systems.
CY7C2564XV18-450BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2564XV18-450BZXI FAQ
1.How can I place an order for CY7C2564XV18-450BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2564XV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2564XV18-450BZXI reliable?
The price and inventory of CY7C2564XV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2564XV18-450BZXI is usually 5 days.
3.What payment methods are accepted for CY7C2564XV18-450BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2564XV18-450BZXI transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C2564XV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2564XV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2564XV18-450BZXI?
For technical support, including CY7C2564XV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2564XV18-450BZXI requirements.
6.How does Aetrix verify that CY7C2564XV18-450BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C2564XV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2564XV18-450BZXI meets industry standards.
7.What is the process for return or replacement of CY7C2564XV18-450BZXI?
All CY7C2564XV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2564XV18-450BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2564XV18-450BZXI part is unused and in its original packaging.
Return procedure for CY7C2564XV18-450BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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