Infineon Technologies CY7C25652KV18-450BZI
- Part No.:
- CY7C25652KV18-450BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25652KV18-450BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,389
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 450 MHz maximum clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[35:0], BWS[3:0], and K/K inputs. It delivers 1100 MT/s DDR data rates on independent read/write ports and operates at 1.8 V core / 1.4–1.8 V I/O for high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, ODT configuration via ZQ/ODT pins, and FBGA-165 package compatibility with high-speed PCB routing constraints.
Technical Context
The CY7C25652KV18 implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual input clocks (K and K) - both rising-edge-triggered - to latch addresses and data, enabling concurrent read/write operations without arbitration overhead.
Its internal PLL ensures precise data placement relative to echo clocks (CQ/CQ), while the DOFF pin selects between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes. On-die termination is configurable via ZQ resistor and ODT pin for D[35:0], BWS[3:0], and K/K inputs, reducing external termination components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s effective throughput per port |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned data capture |
| Data Rate | 1100 MT/s DDR - transfers four 36-bit words per burst on each port |
| Supply Voltages | VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage system interfacing |
| Termination Support | On-die termination for D[35:0], BWS[3:0], K/K - eliminates 24+ external resistors |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for signal integrity at >500 MHz operation |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of K/K; tri-stated when RPS deasserted |
| RPS / WPS | Read/Write port select (active LOW) | Enables independent port activation; allows concurrent transactions |
| BWS[3:0] | Byte write select inputs | Each controls 9-bit byte (D[8:0] to D[35:27]); enables partial-word writes |
| K / K | Dual-phase input clocks | Both rising edges used - K for address/control, K for data - enabling DDR timing |
| CQ / CQ | Free-running echo clocks | Phase-aligned to K/K; simplifies high-speed data capture without skew compensation |
| QVLD | Valid data indicator output | Edge-aligned with CQ/CQ; signals when Q[35:0] contains valid burst data |
| ODT / ZQ | On-die termination control | ZQ sets output impedance (0.2×RQ); ODT selects termination range (175–350 Ω) |
| DOFF | Read latency mode select | HIGH → 2.5-cycle latency; LOW → 1-cycle latency (QDR I compatibility) |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates bus turnaround delay - enables true concurrent access without arbitration logic |
| Four-word burst architecture | Reduces address bus toggling by 75% vs. single-word access - lowers EMI and routing complexity |
| Programmable ODT with ZQ calibration | Removes 32+ external termination resistors - saves PCB area and improves signal integrity at 1100 MT/s |
| QVLD + echo clocks (CQ/CQ) | Provides deterministic data-valid timing - eliminates setup/hold margin uncertainty in FPGA interfaces |
| DOFF-configurable latency | Supports migration from QDR I (1-cycle) to QDR II+ (2.5-cycle) without redesigning timing constraints |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet line cards with real-time traffic shaping. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffer between SerDes PHY and traffic manager ASIC - absorbing bursty traffic with zero turnaround penalty. Use Value: 2.5-cycle latency + 450 MHz clock sustains 32.4 GB/s aggregate bandwidth (16.2 GB/s per port), meeting RFC 2544 throughput requirements. |
Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: Synchronized acquisition memory - write port captures ADC samples at 1.1 GS/s; read port streams to analysis engine with deterministic latency. Use Value: Echo clocks (CQ/CQ) and QVLD enable FPGA-based capture logic to align sample validity within ±50 ps - critical for jitter measurement accuracy. |
| Telecom Baseband Processing | Defense Radar Signal Buffering |
|
Use Scenario: Interleaving channelized data streams in LTE/5G baseband units during FFT/IFFT processing pipelines. IC Role / Device Role / Timing Role: Shared-memory FIFO between digital front-end (DFE) and modem processor - handling variable-length bursts with strict latency bounds. Use Value: Byte-write select (BWS[3:0]) allows partial updates of 36-bit symbols without disturbing adjacent data - preserving coherence across multi-carrier OFDMA frames. |
Use Scenario: Storing pulse-Doppler radar returns in airborne early warning systems requiring radiation-hardened, low-jitter memory access. IC Role / Device Role / Timing Role: Real-time frame buffer feeding SAR image reconstruction engine - operating in extended temperature range with deterministic timing. Use Value: 1.8 V core + HSTL I/O ensures stable operation at −40°C to +85°C with <10 ps cycle-to-cycle jitter - meeting MIL-STD-810G environmental compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit (1M × 36), 1000 MHz interface, no ODT, LVDS I/O, 2.5 V supply | Higher speed but incompatible voltage and termination scheme - requires level-shifting and external termination | Select only if system already uses LVDS signaling and can accommodate 2.5 V I/O rails |
| ISSI IS61WV102436B | 36-Mbit (1M × 36), asynchronous interface, 15 ns access, 3.3 V only, no burst or DDR | Lacks QDR architecture - cannot support concurrent read/write or 1100 MT/s throughput | Acceptable only for legacy cost-sensitive designs where bandwidth < 1 GB/s suffices |
Compared with IDT72T36120L10BG and IS61WV102436B, CY7C25652KV18 uniquely combines 72-Mbit density, 450 MHz QDR II+ timing, integrated ODT, and 1.4–1.8 V flexible I/O - making it the only drop-in solution for new 10G+ networking and ATE platforms requiring deterministic latency and minimal board area.
Availability
CY7C25652KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and defense radar signal buffering requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C25652KV18 belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, high-throughput buffering in infrastructure equipment where concurrent access, low latency, and signal integrity at multi-GHz speeds are mandatory.
FAQ
What is the function of the DOFF pin on CY7C25652KV18?
The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency required for full QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled at power-up and latched internally - it cannot be changed dynamically during operation without reset.
How does on-die termination (ODT) work with the ZQ pin?
ZQ connects to an external precision resistor (175–350 Ω) to ground, setting output driver impedance to 0.2×RQ for Q[35:0], CQ, and CQ. The ODT pin selects termination range: LOW enables RQ/3.33 (175–350 Ω), HIGH enables RQ/1.66 (175–250 Ω). Floating ODT defaults to HIGH range - no external pull-up/down is required.
Can CY7C25652KV18 operate with only one clock input?
No. The device requires both K and K clock inputs - they are complementary and both rising edges are used for data capture and output timing. Using only K violates AC timing specifications and causes undefined behavior on write data sampling and read data alignment. K must be inverted from K with <100 ps skew for guaranteed operation at 450 MHz.
What is the purpose of the QVLD signal and how is it timed?
QVLD (Queue Valid) is an output that pulses HIGH for exactly one K/K cycle when valid data appears on Q[35:0] during a read burst. It is edge-aligned with CQ and CQ, providing unambiguous indication of data validity without requiring additional timing margin calculations - essential for reliable capture in FPGA-based receivers.
CY7C25652KV18-450BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25652KV18-450BZI FAQ
1.How can I place an order for CY7C25652KV18-450BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25652KV18-450BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25652KV18-450BZI reliable?
The price and inventory of CY7C25652KV18-450BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-450BZI is usually 5 days.
3.What payment methods are accepted for CY7C25652KV18-450BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25652KV18-450BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C25652KV18-450BZI?
CY7C25652KV18-450BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25652KV18-450BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25652KV18-450BZI?
For technical support, including CY7C25652KV18-450BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25652KV18-450BZI requirements.
6.How does Aetrix verify that CY7C25652KV18-450BZI is sourced from the original manufacturer or authorized distributors?
All CY7C25652KV18-450BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-450BZI meets industry standards.
7.What is the process for return or replacement of CY7C25652KV18-450BZI?
All CY7C25652KV18-450BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-450BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25652KV18-450BZI part is unused and in its original packaging.
Return procedure for CY7C25652KV18-450BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C25652KV18-450BZI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

